Gain-bandwidth product analysis of InAlGaAs-InAlAs superlattice avalanche photodiodes

1996 ◽  
Vol 8 (2) ◽  
pp. 269-271 ◽  
Author(s):  
I. Watanabe ◽  
M. Tsuji ◽  
K. Makita ◽  
K. Taguchi
Keyword(s):  
Avalanche Photodiodes ◽  
Product Analysis ◽  
Gain Bandwidth

High-speed flip-chip InP/InGaAs avalanche photodiodes with ultralow capacitance and large gain-bandwidth products

1991 ◽  
Vol 3 (12) ◽  
pp. 1115-1116 ◽  
Author(s):  
Y. Kito ◽  
H. Kuwatsuka ◽  
T. Kumai ◽  
M. Makiuchi ◽  
T. Uchida ◽  
...  
Keyword(s):  
High Speed ◽  
Flip Chip ◽  
Avalanche Photodiodes ◽  
Gain Bandwidth ◽  
Large Gain

scholarly journals Low dark current and high gain-bandwidth product of avalanche photodiodes: optimization and realization

2020 ◽  
Vol 28 (11) ◽  
pp. 16211
Author(s):  
Hui Wang ◽  
Xiaohong Yang ◽  
Rui Wang ◽  
Tingting He ◽  
Kaibao Liu
Keyword(s):  
Dark Current ◽  
Avalanche Photodiodes ◽  
High Gain ◽  
Gain Bandwidth

240-GHz Gain-Bandwidth Product Back-Side Illuminated AlInAs Avalanche Photodiodes

2010 ◽  
Vol 22 (18) ◽  
pp. 1373-1375 ◽  
Author(s):  
M. Lahrichi ◽  
G. Glastre ◽  
E. Derouin ◽  
D. Carpentier ◽  
N. Lagay ◽  
...  
Keyword(s):  
Avalanche Photodiodes ◽  
Back Side ◽  
Gain Bandwidth

Intrinsic carrier multiplication in layered Bi2O2Se avalanche photodiodes with gain bandwidth product exceeding 1 GHz

Nano Research ◽  
2020 ◽  
Author(s):  
Vinod K. Sangwan ◽  
Joohoon Kang ◽  
David Lam ◽  
J. Tyler Gish ◽  
Spencer A. Wells ◽  
...  
Keyword(s):  
Avalanche Photodiodes ◽  
Gain Bandwidth ◽  
Carrier Multiplication
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