Improved microwave sensitivity to 706 kV/W by using p-GaAsSb/n-InAs nanowire backward diodes for low-power energy harvesting at zero bias
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2019 ◽
Vol 2019
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pp. 1-10
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1996 ◽
Vol 8
(2)
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pp. 185-187
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2012 ◽
Vol 132
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pp. 49-69
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