scholarly journals Improved microwave sensitivity to 706 kV/W by using p-GaAsSb/n-InAs nanowire backward diodes for low-power energy harvesting at zero bias

AIP Advances ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 085218
Author(s):  
Tsuyoshi Takahashi ◽  
Kenichi Kawaguchi ◽  
Masaru Sato ◽  
Michihiko Suhara ◽  
Naoya Okamoto
Author(s):  
Lukas Sigrist ◽  
Andres Gomez ◽  
Matthias Leubin ◽  
Jan Beutel ◽  
Lothar Thiele

2019 ◽  
Vol 2019 ◽  
pp. 1-10 ◽  
Author(s):  
Daniel Ayala-Ruiz ◽  
Alejandro Castillo Atoche ◽  
Erica Ruiz-Ibarra ◽  
Edith Osorio de la Rosa ◽  
Javier Vázquez Castillo

Long power wide area networks (LPWAN) systems play an important role in monitoring environmental conditions for smart cities applications. With the development of Internet of Things (IoT), wireless sensor networks (WSN), and energy harvesting devices, ultra-low power sensor nodes (SNs) are able to collect and monitor the information for environmental protection, urban planning, and risk prevention. This paper presents a WSN of self-powered IoT SNs energetically autonomous using Plant Microbial Fuel Cells (PMFCs). An energy harvesting device has been adapted with the PMFC to enable a batteryless operation of the SN providing power supply to the sensor network. The low-power communication feature of the SN network is used to monitor the environmental data with a dynamic power management strategy successfully designed for the PMFC-based LoRa sensor node. Environmental data of ozone (O3) and carbon dioxide (CO2) are monitored in real time through a web application providing IoT cloud services with security and privacy protocols.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Amir Muhammad Afzal ◽  
In-Gon Bae ◽  
Yushika Aggarwal ◽  
Jaewoo Park ◽  
Hye-Ryeon Jeong ◽  
...  

AbstractHybrid organic–inorganic perovskite materials provide noteworthy compact systems that could offer ground-breaking architectures for dynamic operations and advanced engineering in high-performance energy-harvesting optoelectronic devices. Here, we demonstrate a highly effective self-powered perovskite-based photodiode with an electron-blocking hole-transport layer (NiOx). A high value of responsivity (R = 360 mA W−1) with good detectivity (D = 2.1 × 1011 Jones) and external quantum efficiency (EQE = 76.5%) is achieved due to the excellent interface quality and suppression of the dark current at zero bias voltage owing to the NiOx layer, providing outcomes one order of magnitude higher than values currently in the literature. Meanwhile, the value of R is progressively increased to 428 mA W−1 with D = 3.6 × 1011 Jones and EQE = 77% at a bias voltage of − 1.0 V. With a diode model, we also attained a high value of the built-in potential with the NiOx layer, which is a direct signature of the improvement of the charge-selecting characteristics of the NiOx layer. We also observed fast rise and decay times of approximately 0.9 and 1.8 ms, respectively, at zero bias voltage. Hence, these astonishing results based on the perovskite active layer together with the charge-selective NiOx layer provide a platform on which to realise high-performance self-powered photodiode as well as energy-harvesting devices in the field of optoelectronics.


2012 ◽  
Vol 132 ◽  
pp. 49-69 ◽  
Author(s):  
Norashidah Md. Din ◽  
Chandan Kumar Chakrabarty ◽  
Aima Bin Ismail ◽  
Kavuri Kasi Annapurna Devi ◽  
Wan-Yu Chen

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