Low-temperature (10-300 K) characterization of MOVPE-grown vertical-cavity surface-emitting lasers

1995 ◽  
Vol 7 (10) ◽  
pp. 1110-1112 ◽  
Author(s):  
L.A. Hornak ◽  
J.C. Barr ◽  
W.D. Cox ◽  
K.S. Brown ◽  
R.A. Morgan ◽  
...  
Keyword(s):  
Low Temperature ◽  
Cavity Surface ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

Pt Heater/Sensor Microarray for Distributed Fluidic Cooling Assessment

2001 ◽  
Author(s):  
Yong-Kyu Yoon ◽  
Mark G. Allen
Keyword(s):  
Local Heating ◽  
Cavity Surface ◽  
Local Cooling ◽  
One Dimensional ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Micro Array ◽  
Emitting Lasers ◽  
Vertical Cavity

Abstract This paper presents the design, fabrication, and characterization of a one-dimensional microscale heater array testbed that allows assessment of the spatial variation of temperature. Each pixel of the array acts as both a heater and a resistive temperature sensor simultaneously. The heater/sensor array is designed to mimic heat generation by line arrays of vertical-cavity surface emitting lasers (VCSELs), in order to assess microfluidic cooling schemes for these laser arrays. The array discussed in this paper is a linear micro array consisting of 100 heater elements, each of which has a 75μm pitch, and a nominal 20μmx20μm resistive heating area. Platinum is used for the heater as well as the resistive thermal sensor, since the resistance of platinum as a function of temperature shows extremely good linearity. A total of 101 probe pads are placed between the pixels to apply current for the heater function or to determine temperature for the sensor function. The array is fabricated on a silicon substrate and is diced to a size of 1.2mm × 8mm to match a typical VCSEL array size. Local heating and local cooling experiments (i.e., individual heater pixel or pixel groups) have been performed and demonstrate the versatility of the fabricated thermal testbed.

GaInNAs: A New Material in the Quest for Communications Lasers

2002 ◽  
Vol 722 ◽  
Author(s):  
James S. Harris ◽  
Vincent Gambin
Keyword(s):  
Poor Quality ◽  
Cavity Surface ◽  
Dilute Nitride ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
New Material ◽  
Emitting Lasers ◽  
Quality Material ◽  
Vertical Cavity

AbstractDilute nitride GaInNAs alloys grown on GaAs have quickly become an excellent candidate for lower cost 1.3-1.55νm vertical cavity surface emitting lasers (VCSELs) and high power edge emitting lasers in the past few years. Despite the relative immaturity and challenges of this new materials system the results have been very promising. Some of the material challenges include the limited solubility of nitrogen in GaAs, non-radiative defects that may be caused by nitrogen incorporation, and characterization of the unique set of properties nitrogen adds to this metastable alloy. In addition, a new component has been added in order to improve epitaxial growth and optical properties at wavelengths longer than 1.3νm. By adding Sb to the alloy, luminescence has been greatly enhanced between 1.3-1.6νm where normally poor quality material results. This paper describes some of the material challenges and progress in devices based on the GaInNAs and GaInNAsSb system.

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