Evaluating the continuous-wave performance of AlGaInP-based red (667 nm) vertical-cavity surface-emitting lasers using low-temperature and high-pressure techniques

2001 ◽  
Vol 78 (7) ◽  
pp. 865-867 ◽  
Author(s):  
Stephen J. Sweeney ◽  
Gareth Knowles ◽  
Terry E. Sale
Keyword(s):  
High Pressure ◽  
Low Temperature ◽  
Continuous Wave ◽  
Cavity Surface ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

scholarly journals GaN-based Vertical-Cavity Surface-Emitting Lasers Incorporating Dielectric Distributed Bragg Reflectors

2019 ◽  
Vol 9 (4) ◽  
pp. 733 ◽  
Author(s):  
Tatsushi Hamaguchi ◽  
Hiroshi Nakajima ◽  
Noriyuki Fuutagawa
Keyword(s):  
Continuous Wave ◽  
Epitaxial Lateral Overgrowth ◽  
Cavity Surface ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
Practical Applications ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

This paper reviews past research and the current state-of-the-art concerning gallium nitride-based vertical-cavity surface-emitting lasers (GaN-VCSELs) incorporating distributed Bragg reflectors (DBRs). This paper reviews structures developed during the early stages of research into these devices, covering both major categories of GaN-based VCSELs: hybrid-DBR and all-dielectric-DBR. Although both types exhibited satisfactory performance during continuous-wave (CW) operation in conjunction with current injection as early as 2008, GaN-VCSELs have not yet been mass produced for several reasons. These include the difficulty in controlling the thicknesses of nitride semiconductor layers in hybrid-DBR type devices and issues related to the cavity dimensions in all-dielectric-DBR units. Two novel all-dielectric GaN-based VCSEL concepts based on different structures are examined herein. In one, the device incorporates dielectric DBRs at both ends of the cavity, with one DBR embedded in n-type GaN grown using the epitaxial lateral overgrowth technique. The other concept incorporates a curved mirror fabricated on (000-1) GaN. Both designs are intended to mitigate challenges regarding industrial-scale processing that are related to the difficulty in controlling the cavity length, which have thus far prevented practical applications of all-dielectric GaN-based VCSELs.

850-NM VERTICAL-CAVITY SURFACE-EMITTING LASERS ON SI SUBSTRATES

2000 ◽  
Vol 10 (01) ◽  
pp. 319-326
Author(s):  
Y. ZHOU ◽  
Y. XIONG ◽  
Y.-H. LO ◽  
C. JI ◽  
Z. H. ZHU ◽  
...  
Keyword(s):  
Continuous Wave ◽  
Light Output ◽  
Cavity Surface ◽  
Light Output Power ◽  
Si Substrates ◽  
Continuous Wave Operation ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

By employing a reactive low temperature wafer bonding technique, we have demonstrated oxide-defined 850 nm vertical-cavity surface-emitting lasers (VCSEL's) on Si substrates. Devices reach a differential quantum efficiency of 53% and a light output power of 7.1 mW under room temperature and continuous-wave operation without a heat sink.

Room temperature continuous wave lasing of electrically injected GaN-based vertical cavity surface emitting lasers

2014 ◽  
Vol 104 (25) ◽  
pp. 251116 ◽  
Author(s):  
Wen-Jie Liu ◽  
Xiao-Long Hu ◽  
Lei -Ying Ying ◽  
Jiang-Yong Zhang ◽  
Bao-Ping Zhang
Keyword(s):  
Room Temperature ◽  
Continuous Wave ◽  
Cavity Surface ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity
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