High temperature characteristics of strained InGaAs/lnGaAsP quantum well lasers lattice matched to GaAs

Seoung-Hwan Park;  Weon-Guk Jeong;  Byung-Doo Choe

doi:10.1109/68.334818

High temperature characteristics of strained InGaAs/lnGaAsP quantum well lasers lattice matched to GaAs

IEEE Photonics Technology Letters ◽

10.1109/68.334818 ◽

1994 ◽

Vol 6 (11) ◽

pp. 1297-1299 ◽

Cited By ~ 1

Author(s):

Seoung-Hwan Park ◽

Weon-Guk Jeong ◽

Byung-Doo Choe

Keyword(s):

High Temperature ◽

Quantum Well ◽

Quantum Well Lasers ◽

Temperature Characteristics ◽

Lattice Matched

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Temperature dependence of intrasubband relaxation time and its influence on high‐temperature characteristics of InP‐based quantum‐well lasers

Journal of Applied Physics ◽

10.1063/1.359274 ◽

1995 ◽

Vol 77 (10) ◽

pp. 5237-5240

Author(s):

Shunji Seki ◽

Kiyoyuki Yokoyama ◽

Paul Sotirelis

Keyword(s):

Relaxation Time ◽

High Temperature ◽

Quantum Well ◽

Temperature Dependence ◽

Quantum Well Lasers ◽

Temperature Characteristics

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Universal rule for determining the critical temperature in the high-temperature characteristics of quantum well lasers operating at 1.3 μm

Conference Digest. ISLC 1998 NARA. 1998 IEEE 16th International Semiconductor Laser Conference (Cat. No. 98CH361130) ◽

10.1109/islc.1998.734136 ◽

2002 ◽

Author(s):

S. Seki ◽

K. Yokoyama

Keyword(s):

High Temperature ◽

Critical Temperature ◽

Quantum Well ◽

Quantum Well Lasers ◽

Temperature Characteristics ◽

Universal Rule

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High temperature characteristics of highly strained 1.2 /spl mu/m InGaAs/GaAs quantum well lasers

Fifth Asia-Pacific Conference on ... and Fourth Optoelectronics and Communications Conference on Communications, ◽

10.1109/apcc.1999.820504 ◽

1999 ◽

Author(s):

Z.B. Chen ◽

D. Schlenker ◽

F. Koyama ◽

T. Miyamoto ◽

A. Matsutani ◽

...

Keyword(s):

High Temperature ◽

Quantum Well ◽

Quantum Well Lasers ◽

Temperature Characteristics ◽

Highly Strained

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Design considerations to improve high temperature characteristics of 1.3 μm AlGaInAs-InP uncooled multiple quantum well lasers: Strain in barriers

Optik ◽

10.1016/j.ijleo.2010.03.016 ◽

2011 ◽

Vol 122 (6) ◽

pp. 514-519

Author(s):

Vahid Bahrami Yekta ◽

Hassan Kaatuzian

Keyword(s):

High Temperature ◽

Quantum Well ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Temperature Characteristics ◽

Design Considerations

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High-temperature characteristics of 1.55-μm InGaAs/InGaAsP strain-compensated multiple-quantum-well lasers

10.1117/12.445725 ◽

2001 ◽

Author(s):

Chunsheng Ma ◽

Wenbin Guo ◽

Shiyong Liu

Keyword(s):

High Temperature ◽

Quantum Well ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Temperature Characteristics

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Theoretical analysis of high-temperature characteristics of 1.3-μm InP-based quantum-well lasers

IEEE Journal of Selected Topics in Quantum Electronics ◽

10.1109/2944.401205 ◽

1995 ◽

Vol 1 (2) ◽

pp. 264-274 ◽

Cited By ~ 19

Author(s):

S. Seki ◽

K. Yokoyama ◽

P. Sotirelis

Keyword(s):

High Temperature ◽

Theoretical Analysis ◽

Quantum Well ◽

Quantum Well Lasers ◽

Temperature Characteristics

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Analysis of the high temperature characteristics of InGaAs-AlGaAs strained quantum-well lasers

IEEE Journal of Quantum Electronics ◽

10.1109/3.166462 ◽

1992 ◽

Vol 28 (12) ◽

pp. 2698-2705 ◽

Cited By ~ 15

Author(s):

P.L. Derry ◽

R.J. Fu ◽

C.S. Hong ◽

E.Y. Chan ◽

L. Figueroa

Keyword(s):

High Temperature ◽

Quantum Well ◽

Quantum Well Lasers ◽

Temperature Characteristics ◽

Strained Quantum Well

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High-Temperature Characteristics of GaInNAs/GaAs Single-Quantum-Well Lasers Grown by Plasma-Assisted Molecular Beam Epitaxy

Chinese Physics Letters ◽

10.1088/0256-307x/18/5/312 ◽

2001 ◽

Vol 18 (5) ◽

pp. 659-661 ◽

Cited By ~ 4

Author(s):

Pan Zhong ◽

Li Lian-He ◽

Du Yun ◽

Lin Yao-Wang ◽

Wu Rong-Han

Keyword(s):

High Temperature ◽

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Temperature Characteristics

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High-temperature characteristics of 1.3 μm InGaAsN:Sb/GaAs multiple-quantum-well lasers grown by molecular-beam epitaxy

Applied Physics Letters ◽

10.1063/1.125587 ◽

2000 ◽

Vol 76 (7) ◽

pp. 795-797 ◽

Cited By ~ 51

Author(s):

X. Yang ◽

J. B. Heroux ◽

M. J. Jurkovic ◽

W. I. Wang

Keyword(s):

High Temperature ◽

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Temperature Characteristics

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High Temperature Characteristics of Strained InGaAs/InGaAlAs Quantum Well Lasers

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.3528 ◽

1997 ◽

Vol 36 (Part 1, No. 6A) ◽

pp. 3528-3530 ◽

Cited By ~ 2

Author(s):

Seoung-Hwan Park

Keyword(s):

High Temperature ◽

Quantum Well ◽

Quantum Well Lasers ◽

Temperature Characteristics

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