Low threshold room temperature pulsed and -57 degrees C CW operations of 1.3 mu m GaInAsP/InP circular planar buried heterostructure surface-emitting lasers

T. Baba; K. Suzuki; Y. Yogo; K. Iga; F. Koyama

doi:10.1109/68.229792

Low threshold room temperature pulsed and -57 degrees C CW operations of 1.3 mu m GaInAsP/InP circular planar buried heterostructure surface-emitting lasers

IEEE Photonics Technology Letters ◽

10.1109/68.229792 ◽

1993 ◽

Vol 5 (7) ◽

pp. 744-746 ◽

Cited By ~ 5

Author(s):

T. Baba ◽

K. Suzuki ◽

Y. Yogo ◽

K. Iga ◽

F. Koyama

Keyword(s):

Room Temperature ◽

Surface Emitting Lasers ◽

Buried Heterostructure ◽

Low Threshold ◽

Emitting Lasers

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Low Threshold Room Temperature Pulsed and −31 °C CW Operations of 1.3 µm GaInAsP/InP Buried Heterostructure Surface Emitting Lasers

Conference on Optical Fiber Communication/International Conference on Integrated Optics and Optical Fiber Communication ◽

10.1364/ofc.1993.pd28 ◽

1993 ◽

Author(s):

T. Baba ◽

Y. Yogo ◽

K. Suzuki ◽

F. Koyama ◽

K. Iga

Keyword(s):

Room Temperature ◽

Surface Emitting Lasers ◽

Buried Heterostructure ◽

Low Threshold ◽

Emitting Lasers

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Optimization of 1.3 µm GaAs-based oxide-confined (GaIn)(NAs) vertical-cavity surface-emitting lasers for low-threshold room-temperature operation

Journal of Physics Condensed Matter ◽

10.1088/0953-8984/16/31/009 ◽

2004 ◽

Vol 16 (31) ◽

pp. S3121-S3140 ◽

Cited By ~ 43

Author(s):

Robert P Sarza a ◽

W odzimierz Nakwaski

Keyword(s):

Room Temperature ◽

Cavity Surface ◽

Surface Emitting Lasers ◽

Vertical Cavity Surface ◽

Low Threshold ◽

Emitting Lasers ◽

Vertical Cavity ◽

Room Temperature Operation

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Low threshold, room temperature pulsed operation of 1.5 /spl mu/m vertical-cavity surface-emitting lasers with an optimized multi-quantum well active layer

IEEE Photonics Technology Letters ◽

10.1109/68.275476 ◽

1994 ◽

Vol 6 (3) ◽

pp. 317-319 ◽

Cited By ~ 35

Author(s):

K. Uomi ◽

S.J.B. Yoo ◽

A. Scherer ◽

R. Bhat ◽

N.C. Andreadakis ◽

...

Keyword(s):

Quantum Well ◽

Active Layer ◽

Room Temperature ◽

Cavity Surface ◽

Surface Emitting Lasers ◽

Vertical Cavity Surface ◽

Low Threshold ◽

Emitting Lasers ◽

Vertical Cavity ◽

Multi Quantum Well

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Surface-emitting lasers of low-threshold 1.3-μm GaInAsP/InP circular planar-buried heterostructure

Electronics and Communications in Japan (Part II Electronics) ◽

10.1002/ecjb.4420770204 ◽

1994 ◽

Vol 77 (2) ◽

pp. 29-38 ◽

Cited By ~ 1

Author(s):

Toshihiko Baba ◽

Yukiaki Yogo ◽

Katsumasa Suzuki ◽

Fumio Koyama ◽

Kenichi Iga

Keyword(s):

Surface Emitting Lasers ◽

Buried Heterostructure ◽

Low Threshold ◽

Emitting Lasers

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GaAs surface emitting lasers with circular buried heterostructure grown by metalorganic chemical vapor deposition and two‐dimensional laser array

Applied Physics Letters ◽

10.1063/1.99405 ◽

1988 ◽

Vol 52 (7) ◽

pp. 528-529 ◽

Cited By ~ 31

Author(s):

Fumio Koyama ◽

Kazuhiko Tomomatsu ◽

Kenichi Iga

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Two Dimensional ◽

Laser Array ◽

Surface Emitting Lasers ◽

Buried Heterostructure ◽

Emitting Lasers ◽

Metalorganic Chemical

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Wide operating wavelength range and low threshold current In/sub 0.24/Ga/sub 0.76/As/GaAs vertical-cavity surface-emitting lasers

IEEE Photonics Technology Letters ◽

10.1109/68.166938 ◽

1992 ◽

Vol 4 (11) ◽

pp. 1192-1194 ◽

Cited By ~ 11

Author(s):

T.E. Sale ◽

J. Woodhead ◽

R. Grey ◽

P.N. Robson

Keyword(s):

Wavelength Range ◽

Threshold Current ◽

Cavity Surface ◽

Operating Wavelength ◽

Surface Emitting Lasers ◽

Vertical Cavity Surface ◽

Low Threshold ◽

Emitting Lasers ◽

Vertical Cavity ◽

Wide Operating

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Dielectric apertures for mode control in low threshold and single mode vertical-cavity surface-emitting lasers

Conference Proceedings. LEOS'98. 11th Annual Meeting. IEEE Lasers and Electro-Optics Society 1998 Annual Meeting (Cat. No.98CH36243) ◽

10.1109/leos.1998.739518 ◽

2002 ◽

Author(s):

D.G. Deppe ◽

D.L. Huffaker ◽

T.-H. Oh ◽

Z.Z. Zhou

Keyword(s):

Single Mode ◽

Cavity Surface ◽

Mode Control ◽

Surface Emitting Lasers ◽

Vertical Cavity Surface ◽

Low Threshold ◽

Emitting Lasers ◽

Vertical Cavity

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Interface Recombination Reduction by (NH4)2Sx-Passivation in Metalorganic Chemical Vapor Deposition Regrown GaAlAs/GaAs Buried Heterostructure Lasers and Estimation of Threshold Currents in Microcavity Surface Emitting Lasers

Japanese Journal of Applied Physics ◽

10.1143/jjap.31.3292 ◽

1992 ◽

Vol 31 (Part 1, No. 10) ◽

pp. 3292-3295 ◽

Cited By ~ 14

Author(s):

Takemasa Tamanuki ◽

Fumio Koyama ◽

Kenichi Iga

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Interface Recombination ◽

Surface Emitting Lasers ◽

Buried Heterostructure ◽

Emitting Lasers ◽

Metalorganic Chemical

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Room temperature operation of SiC-cooled and AlGaInP-based, red-emitting membrane external-cavity surface-emitting lasers (MECSELs)

10.1109/cleo/europe-eqec52157.2021.9542067 ◽

2021 ◽

Author(s):

Philipp Tatar-Mathes ◽

Hoy-My Phung ◽

Aaron Rogers ◽

Antti Tukiainen ◽

Patrik Rajala ◽

...

Keyword(s):

Room Temperature ◽

External Cavity ◽

Cavity Surface ◽

Surface Emitting Lasers ◽

Emitting Lasers ◽

Room Temperature Operation

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Low-Threshold Single-Mode Lasing from InP-based Double-Lattice Photonic Crystal Surface Emitting Lasers with High-Aspect-Ratio Air Holes

10.1109/islc51662.2021.9615636 ◽

2021 ◽

Author(s):

Yuhki Itoh ◽

Naoya Kono ◽

Naoki Fujiwara ◽

Hideki Yagi ◽

Tomokazu Katsuyama ◽

...

Keyword(s):

Photonic Crystal ◽

Aspect Ratio ◽

High Aspect Ratio ◽

Crystal Surface ◽

Single Mode ◽

Surface Emitting Lasers ◽

Low Threshold ◽

Emitting Lasers

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