Low threshold InGaAs/GaAs 45 degrees folded cavity surface-emitting laser grown on structured substrates

1993 ◽  
Vol 5 (7) ◽  
pp. 741-743 ◽  
Author(s):  
N.C. Frateschi ◽  
P.D. Dapkus ◽  
S.S. Ou ◽  
J.J. Yang ◽  
M. Jansen
2002 ◽  
Vol 744 ◽  
Author(s):  
Zhuopeng Tan ◽  
Yixin Li ◽  
Aris Christou

ABSTRACTAn electrically pumped 1.24um GaxIn1-xAsyP1-y Vertical Cavity Surface Emitting Laser (VCSEL) has been designed and simulated. Threshold gain of 153cm-1 and threshold current of 1.00mA was obtained. The external efficiency predicted is 0.31. Also the optimized design of VCSEL structure is presented in this article. GaInAsP and AlInAs constitute the Distributed Bragg Reflectors (DBRs) multilayer stack. Reflectivity of the top DBRs is 0.97 and reflectivity of the bottom DBRs is 0.9978 and is shown to provide a good resonant cavity and sufficient lasing intensity. Compared with other reported structures, the present VCSEL has a lower threshold current and higher threshold gain.


1993 ◽  
Vol 40 (11) ◽  
pp. 2116-2117 ◽  
Author(s):  
Y.A. Wu ◽  
C.J. Chang-Hasnain ◽  
G.S. Li ◽  
R. Nabiev ◽  
C. Caneau ◽  
...  

1993 ◽  
Vol 29 (7) ◽  
pp. 584 ◽  
Author(s):  
K.L. Lear ◽  
S.A. Chalmers ◽  
K.P. Killeen

1996 ◽  
Author(s):  
Zhongqi Pan ◽  
Yongzhen Huang ◽  
Rong Han Wu ◽  
Zengqi Zhou ◽  
Yaowang Ling ◽  
...  

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