Monolithic integration of a strained-layer InGaAs-GaAs-AlGaAs quantum-well laser with a passive waveguide by selective-area MOCVD

1993 ◽  
Vol 5 (4) ◽  
pp. 448-450 ◽  
Author(s):  
T.M. Cockerill ◽  
D.V. Forbes ◽  
H. Han ◽  
J.J. Coleman
Keyword(s):  
Quantum Well ◽  
Monolithic Integration ◽  
Strained Layer ◽  
Quantum Well Laser ◽  
Selective Area

Carrier heating and spectral hole burning in strained‐layer quantum‐well laser amplifiers at 1.5 μm

1992 ◽  
Vol 61 (21) ◽  
pp. 2512-2514 ◽  
Author(s):  
K. L. Hall ◽  
G. Lenz ◽  
E. P. Ippen ◽  
U. Koren ◽  
G. Raybon
Keyword(s):  
Quantum Well ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Carrier Heating ◽  
Strained Layer ◽  
Laser Amplifiers ◽  
Quantum Well Laser ◽  
Spectral Hole

Long-wavelength strained-layer InAs/GaInAs single-quantum-well laser grown by molecular beam epitaxy on InP substrate

1993 ◽  
Vol 29 (14) ◽  
pp. 1255 ◽  
Author(s):  
E. Tournié ◽  
P. Grunberg ◽  
C. Fouillant ◽  
S. Kadret ◽  
B. Boissier ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Strained Layer ◽  
Long Wavelength ◽  
Quantum Well Laser ◽  
Inp Substrate

All solid source molecular beam epitaxy growth of 1.35 µm wavelength strained-layer GaInAsP quantum well laser

1995 ◽  
Vol 31 (10) ◽  
pp. 797-799 ◽  
Author(s):  
M. Toivonen ◽  
J. Näppi ◽  
A. Salokatve ◽  
M. Pessa ◽  
M. Jalonen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Strained Layer ◽  
Quantum Well Laser
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