Thermal uniformity of 12-in silicon wafer during rapid thermal processing by inverse heat transfer method

2000 ◽  
Vol 13 (4) ◽  
pp. 448-456 ◽  
Author(s):  
Senpuu Lin ◽  
Hsin-Sen Chu
Keyword(s):  
Heat Transfer ◽  
Silicon Wafer ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Inverse Heat Transfer ◽  
Transfer Method

Transient And Spatial Radiative Properties Of Patterned Wafers During Rapid Thermal Processing

1995 ◽  
Vol 387 ◽  
Author(s):  
Peter Y. Wong ◽  
Ioannis N. Miaoulis ◽  
Cynthia G. Madras
Keyword(s):  
Heat Transfer ◽  
Heat Source ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Temporal Variations ◽  
Radiative Properties ◽  
Wafer Surface ◽  
Patterned Wafers ◽  
Thermal Radiative Properties ◽  
Dynamic Variations

AbstractTemperature measurements and processing uniformity continue to be major issues in Rapid Thermal Processing. Spatial and temporal variations in thermal radiative properties of the wafer surface are sources of non-uniformities and dynamic variations. These effects are due to changes in spectral distribution (wafer or heat source), oxidation, epitaxy, silicidation, and other microstructural transformations. Additionally, other variations are induced by the underlying (before processing) and developing (during processing) patterns on the wafer. Numerical simulations of Co silicidation that account for these factors are conducted to determine the radiative properties, heat transfer dynamics, and resultant processing uniformity.

scholarly journals Experimental Estimation of Temporal and Spatial Resolution of Coefficient of Heat Transfer in a Channel Using Inverse Heat Transfer Method

2019 ◽  
Author(s):  
Majid Karami ◽  
Somayeh Davoodabadi Farahani ◽  
Farshad Kowsary ◽  
Amir Mosavi
Keyword(s):  
Heat Transfer ◽  
Nusselt Number ◽  
Heat Transfer Coefficient ◽  
Transfer Coefficient ◽  
Spatial Resolution ◽  
Time History ◽  
Inverse Technique ◽  
Inverse Heat Transfer ◽  
Temporal And Spatial ◽  
Transfer Method

In this research, a novel method to investigation the transient heat transfer coefficient in a channel is suggested experimentally, in which the water flow, itself, is considered both just liquid phase and liquid-vapor phase. The experiments were designed to predict the temporal and spatial resolution of Nusselt number. The inverse technique method is non-intrusive, in which time history of temperature is measured, using some thermocouples within the wall to provide input data for the inverse algorithm. The conjugate gradient method is used mostly as an inverse method. The temporal and spatial changes of heat flux, Nusselt number, vapor quality, convection number, and boiling number have all been estimated, showing that the estimated local Nusselt numbers of flow for without and with phase change are close to those predicted from the correlations of Churchill and Ozoe (1973) and Kandlikar (1990), respectively. This study suggests that the extended inverse technique can be successfully utilized to calculate the local time-dependent heat transfer coefficient of boiling flow.

Conjugate Heat Transfer in Air-to-Refrigerant Airfoil Heat Exchangers

2014 ◽  
Vol 136 (8) ◽  
Author(s):  
Yutaka Ito ◽  
Naoya Inokura ◽  
Takao Nagasaki
Keyword(s):  
Heat Transfer ◽  
Carbon Dioxide ◽  
Heat Exchangers ◽  
Transfer Coefficients ◽  
Exchange System ◽  
Heat Transfer Coefficients ◽  
Nusselt Numbers ◽  
Heat Exchange System ◽  
Inverse Heat Transfer ◽  
Transfer Method

A light and compact heat exchange system was realized using two air-to-refrigerant airfoil heat exchangers and a recirculated heat transport refrigerant. Its heat transfer performance was experimentally investigated. Carbon dioxide or water was used as a refrigerant up to a pressure of 30 MPa. Heat transfer coefficients on the outer air-contact and inner refrigerant-contact surfaces were calculated using an inverse heat transfer method. Correlations were developed for the Nusselt numbers of carbon dioxide and water on the inner refrigerant-contact surface. Furthermore, we proposed a method to evaluate a correction factor corresponding to the thermal resistance of the airfoil heat exchanger.

Partial Transparency Effects of Silicon During Rapid Thermal Processing

1998 ◽  
Vol 525 ◽  
Author(s):  
A. R. Abramson ◽  
H. Tadal ◽  
P. Nieva ◽  
P. Zavracky ◽  
I. N. Miaoulis ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Thermal Processing ◽  
Multilayer Film ◽  
Rapid Thermal Processing ◽  
Considerable Effect ◽  
Film Structure ◽  
Free Carrier ◽  
Radiative Properties ◽  
Heavily Doped ◽  
Absorption Characteristics

ABSTRACTThe radiative properties of a silicon wafer undergoing Rapid Thermal Processing (RTP) are contingent upon the doping level of the silicon substrate and film structure on the wafer, and fluctuate drastically with temperature and wavelength. For a lightly doped substrate, partial transparency effects must be considered that significantly affect absorption characteristics. Band gap, free carrier, and lattice absorption are the dominant absorption mechanisms and either individually or in concert have considerable effect on the overall absorption coefficient of the silicon wafer. At high doping levels, partial transparency effects dissipate, and the substrate may be considered optically thick. A numerical model has been developed to examine partial transparency effects, and to compare lightly doped (partially transparent) and heavily doped (opaque) silicon wafers with a multilayer film structure during RTP.

scholarly journals Simulation of silicon wafers heating during rapid thermal processing using “UBTO 1801” unit

Doklady BGUIR ◽  
2020 ◽  
Vol 18 (7) ◽  
pp. 79-86
Author(s):  
J. A. Solovjov ◽  
V. A. Pilipenko ◽  
V. P. Yakovlev
Keyword(s):  
Mathematical Model ◽  
Silicon Wafer ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Light Flux ◽  
Silicon Wafers ◽  
Wafer Surface ◽  
Constant Density ◽  
Wafer Temperature

The present work is devoted to determination of the dependence of the heating temperature of the silicon wafer on the lamps power and the heating time during rapid thermal processing using “UBTO 1801” unit by irradiating the wafer backside with an incoherent flow of constant density light. As a result, a mathematical model of silicon wafer temperature variation was developed on the basis of the equation of nonstationary thermal conductivity and known temperature dependencies of the thermophysical properties of silicon and the emissivity of aluminum and silver applied to the planar surface of the silicon wafer. For experimental determination of the numerical parameters of the mathematical model, silicon wafers were heated with light single pulse of constant power to the temperature of one of three phase transitions such as aluminum-silicon eutectic formation, aluminum melting and silver melting. The time of phase transition formation on the wafer surface during rapid thermal processing was fixed by pyrometric method. In accordance with the developed mathematical model, we determined the conversion coefficient of the lamps electric power to the light flux power density with the numerical value of 5.16∙10-3 cm-2 . Increasing the lamps power from 690 to 2740 W leads to an increase in the silicon wafer temperature during rapid thermal processing from 550°to 930°K, respectively. With that, the wafer temperature prediction error in compliance with developed mathematical model makes less than 2.3 %. The work results can be used when developing new procedures of rapid thermal processing for silicon wafers.

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