Charge injection using gate-induced-drain-leakage current for characterization of plasma edge damage in CMOS devices

1998 ◽  
Vol 11 (2) ◽  
pp. 211-216 ◽  
Author(s):  
T. Brozek ◽  
V.R. Rao ◽  
A. Sridharan ◽  
J.D. Werking ◽  
Y.D. Chan ◽  
...  
Keyword(s):  
Leakage Current ◽  
Charge Injection ◽  
Plasma Edge ◽  
Edge Damage

Structural and Electrical Characterization of Si-Implanted TiN as a Diffusion Barrier for Cu Metallization

1995 ◽  
Vol 391 ◽  
Author(s):  
W.F. Mcarthur ◽  
K.M. Ring ◽  
K.L. Kavanagh
Keyword(s):  
Leakage Current ◽  
Diffusion Barrier ◽  
Depth Profiling ◽  
Electrical Characterization ◽  
Implantation Dose ◽  
Cu Metallization ◽  
Reverse Leakage Current ◽  
Transmission Electron ◽  
Current Voltage

AbstractThe feasibility of Si-implanted TiN as a diffusion barrier between Cu and Si was investigated. Barrier effectiveness was evaluated via reverse leakage current of Cu/TixSiyNz/Si diodes as a function of post-deposition annealing temperature and time, and was found to depend heavily on the film composition and microstructure. TiN implanted with Si28, l0keV, 5xl016ions/cm2 formed an amorphous ternary TixSiyNz layer whose performance as a barrier to Cu diffusion exceeded that of unimplanted, polycrystalline TiN. Results from current-voltage, transmission electron microscopy (TEM), and Auger depth profiling measurements will be presented. The relationship between Si-implantation dose, TixSiyNz structure and reverse leakage current of Cu/TixSiyNz/Si diodes will be discussed, along with implications as to the suitability of these structures in Cu metallization.

Fabrication and Characterization of Ferroelectric Polymer/TiO2/Al-doped ZnO Structures

2008 ◽  
Vol 1071 ◽  
Author(s):  
Koji Aizawa
Keyword(s):  
Leakage Current ◽  
Vinylidene Fluoride ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Tio2 Films ◽  
Gate Leakage Current ◽  
Poly Vinylidene Fluoride ◽  
Doped Zno ◽  
Fabrication And Characterization

AbstractCharacterization of 700-nm-thick poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)]/TiO2/Al-doped ZnO (AZO) structures on a glass substrate were investigated. In this study, the sputtered TiO2 films as insulator were used for the reduction of leakage current. The leakage current density of the fabricated Pt/P(VDF/TrFE)/AZO and Pt/P(VDF/TrFE)/170-nm-thick TiO2/AZO structures were approximately 8.7 and 3.9 nA/cm2 at the applied voltage of 10 V, respectively. In the polarization vs. voltage characteristics, the fabricated Pt/P(VDF/TrFE)/TiO2/AZO structures showed hysteresis loops caused by ferroelectric polarization. The remnant polarization (2Pr) and coercive voltage (2Vc) measured from a saturated hysteresis loop at the frequency of 50 Hz were approximately 12 μC/cm2 and 105 V, respectively. These results suggest that the insertion of TiO2 film is available for reducing the gate leakage current without changing the ferroelectric properties.

Characterization of a CID-38 charge injection device

1996 ◽  
Author(s):  
Brian S. Backer ◽  
Zoran Ninkov ◽  
Massimiliano Corba
Keyword(s):  
Charge Injection ◽  
Injection Device

Profiling Different Kinds of Generated Defects at Elevated Temperature in Both SiO2 and High-k Dielectrics

2010 ◽  
Vol 1252 ◽  
Author(s):  
Sahar Sahhaf ◽  
Robin Degraeve ◽  
Mohammed Zahid ◽  
Guido Groeseneken
Keyword(s):  
High Temperature ◽  
Elevated Temperature ◽  
Low Temperature ◽  
Leakage Current ◽  
Charge Injection ◽  
Constant Voltage ◽  
High K ◽  
Voltage Stress ◽  
Stress Induced Leakage Current ◽  
High K Dielectric

AbstractIn this work, the effect of elevated temperature on the generated defects with constant voltage stress (CVS) in SiO2 and SiO2/HfSiO stacks is investigated. Applying Trap Spectroscopy by Charge Injection and Sensing (TSCIS) to 6.5 nm SiO2 layers, different kinds of generated traps are profiled at low and high temperature. Also the Stress-Induced Leakage Current (SILC) spectrum of high-k dielectric stack is different at elevated temperature indicating that degradation and breakdown at high temperature is not equivalent to that at low temperature and therefore, extrapolation of data from high to low T or vice versa is challenging.

scholarly journals A Measurement Setup and Automated Calculation Method to Determine the Charge Injection Capacity of Implantable Microelectrodes

Sensors ◽  
2018 ◽  
Vol 18 (12) ◽  
pp. 4152 ◽  
Author(s):  
Ana Cisnal ◽  
Juan-Carlos Fraile ◽  
Javier Pérez-Turiel ◽  
Victor Muñoz-Martinez ◽  
Carsten Müller ◽  
...  
Keyword(s):  
Cyclic Voltammetry ◽  
Charge Injection ◽  
Experimental Setup ◽  
Excitable Tissue ◽  
Tissue Resistance ◽  
Voltage Transient ◽  
Transient Measurements ◽  
Functional Electrostimulation

The design of safe stimulation protocols for functional electrostimulation requires knowledge of the “maximum reversible charge injection capacity” of the implantable microelectrodes. One of the main difficulties encountered in characterizing such microelectrodes is the calculation of the access voltage Va. This paper proposes a method to calculate Va that does not require prior knowledge of the overpotential terms and of the electrolyte (or excitable tissue) resistance, which is an advantage for in vivo electrochemical characterization of microelectrodes. To validate this method, we compare the calculated results with those obtained from conventional methods for characterizing three flexible platinum microelectrodes by cyclic voltammetry and voltage transient measurements. This paper presents the experimental setup, the required instrumentation, and the signal processing.

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