A discrete approach to the modeling of power electronic switching networks

1990 ◽  
Vol 5 (4) ◽  
pp. 398-403 ◽  
Author(s):  
S.Y.R. Hui ◽  
C. Christopoulos
Keyword(s):  
Power Electronic ◽  
Switching Networks ◽  
Electronic Switching ◽  
Discrete Approach

Considerations on analog and digital electronic switching networks and their applications

1977 ◽  
Vol 65 (9) ◽  
pp. 1271-1283 ◽  
Author(s):  
A. Bellman ◽  
G. Granello ◽  
A.C. Resta
Keyword(s):  
Switching Networks ◽  
Electronic Switching

Analysis of Shaped Pulse Transitions in Power Electronic Switching Waveforms for Reduced EMI Generation

2011 ◽  
Vol 47 (5) ◽  
pp. 2154-2165 ◽  
Author(s):  
Niall Oswald ◽  
Bernard H. Stark ◽  
Derrick Holliday ◽  
Colin Hargis ◽  
Bill Drury
Keyword(s):  
Power Electronic ◽  
Electronic Switching ◽  
Shaped Pulse

4H-SiC Power Devices: Comparative Overview of UMOS, DMOS, and GTO Device Structures

1997 ◽  
Vol 483 ◽  
Author(s):  
J. B. Casady ◽  
A. K. Agarwal ◽  
L. B. Rowland ◽  
S. Seshadri ◽  
R. R. Siergiej ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Power ◽  
Semiconductor Material ◽  
Power Electronic ◽  
Power Devices ◽  
Switching Device ◽  
Electronic Switching ◽  
Device Structures ◽  
Near Term

AbstractSilicon Carbide (SiC) is an emerging semiconductor material which has been widely predicted to be superior to both Si and GaAs in the area of power electronic switching devices [1]. This paper presents an overview of SiC power devices and concludes that MOS Turn-Off Thyristor (MTOTM) is one of the most promising near term SiC switching device given its high power potential, ease of turn-off, 500°C operation and resulting reduction in cooling requirements. It is further concluded that in order to take advantage of SiC power devices, high temperature packages and components with double sided attachment need to be developed along with the SiC power devices.

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