A new technique to quantify deuterium passivation of interface traps in MOS devices

2001 ◽  
Vol 22 (5) ◽  
pp. 203-205 ◽  
Author(s):  
K. Cheng ◽  
K. Hess ◽  
J.W. Lyding
Keyword(s):  
New Technique ◽  
Interface Traps ◽  
Mos Devices ◽  
A New Technique

A NEW TECHNIQUE FOR EXTRACTING THE MOSFET THRESHOLD VOLTAGE USING NOISE MEASUREMENTS

2004 ◽  
Vol 04 (04) ◽  
pp. L643-L649 ◽  
Author(s):  
G. GIUSI ◽  
N. DONATO ◽  
C. CIOFI ◽  
F. CRUPI
Keyword(s):  
Threshold Voltage ◽  
Thermal Noise ◽  
New Method ◽  
New Technique ◽  
Mos Transistors ◽  
Mos Devices ◽  
Approximate Models ◽  
Current Voltage ◽  
Noise Measurements ◽  
A New Technique

In this work we propose a new technique for the evaluation of the threshold voltage of MOS transistors based on the measurement of the channel thermal noise. Since this new method allows the evaluation of the threshold voltage without any current flowing through the channel, it inherently eliminates the limitations coming from the need of using too approximate models for the interpretation of current-voltage measurements in MOS devices. The results of actual measurements on p-channel MOSFETs are reported that confirm the validity and the significance of the proposed approach.

A new technique for the mapping of oxygen tension on the brain surface

2005 ◽  
Vol 25 (1_suppl) ◽  
pp. S543-S543
Author(s):  
Satoshi Kimura ◽  
Keigo Matsumoto ◽  
Yoshio Imahori ◽  
Katsuyoshi Mineura ◽  
Toshiyuki Itoh
Keyword(s):  
Oxygen Tension ◽  
New Technique ◽  
Brain Surface ◽  
A New Technique ◽  
The Brain

A new technique to visualize alveolar dynamics in a rabbit model

2009 ◽  
Vol 56 (S 01) ◽  
Author(s):  
J Bickenbach ◽  
R Rossaint ◽  
R Autschbach ◽  
R Dembinski
Keyword(s):  
Rabbit Model ◽  
New Technique ◽  
A New Technique
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