Back gate effects on threshold voltage sensitivity to SOI thickness in fully-depleted SOI MOSFETs

2001 ◽  
Vol 22 (1) ◽  
pp. 32-34 ◽  
Author(s):  
M. Noguchi ◽  
T. Numata ◽  
Y. Mitani ◽  
T. Shino ◽  
S. Kawanaka ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Voltage Sensitivity ◽  
Back Gate ◽  
Fully Depleted

Reduction in threshold voltage fluctuation in fully-depleted SOI MOSFETs with back gate control

2004 ◽  
Vol 48 (6) ◽  
pp. 979-984 ◽  
Author(s):  
Toshinori Numata ◽  
Mitsuhiro Noguchi ◽  
Shin-ichi Takagi
Keyword(s):  
Threshold Voltage ◽  
Voltage Fluctuation ◽  
Back Gate ◽  
Fully Depleted ◽  
Gate Control

scholarly journals Investigation of Radiation Effects on FD-SOI Hall Sensors by TCAD Simulations

Sensors ◽  
2020 ◽  
Vol 20 (14) ◽  
pp. 3946
Author(s):  
Linjie Fan ◽  
Jinshun Bi ◽  
Kai Xi ◽  
Gangping Yan
Keyword(s):  
Computer Aided Design ◽  
Radiation Effects ◽  
Heavy Ion ◽  
Silicon On Insulator ◽  
Voltage Sensitivity ◽  
Hall Voltage ◽  
Fully Depleted ◽  
Offset Voltage ◽  
Hall Sensors ◽  
Tcad Simulations

This work investigates the responses of the fully-depleted silicon-on-insulator (FD-SOI) Hall sensors to the three main types of irradiation ionization effects, including the total ionizing dose (TID), transient dose rate (TDR), and single event transient (SET) effects. Via 3D technology computer aided design (TCAD) simulations with insulator fixed charge, radiation, heavy ion, and galvanomagnetic transport models, the performances of the transient current, Hall voltage, sensitivity, efficiency, and offset voltage have been evaluated. For the TID effect, the Hall voltage and sensitivity of the sensor increase after irradiation, while the efficiency and offset voltage decrease. As for TDR and SET effects, when the energy deposited on the sensor during a nuclear explosion or heavy ion injection is small, the transient Hall voltage of the off-state sensor first decreases and then returns to the initial value. However, if the energy deposition is large, the transient Hall voltage first decreases, then increases to a peak value and decreases to a fixed value. The physical mechanisms that produce different trends in the transient Hall voltage have been analyzed in detail.

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