Polysilicon thin-film transistors using self-aligned cobalt and nickel silicide source and drain contacts

1999 ◽  
Vol 20 (7) ◽  
pp. 332-334 ◽  
Author(s):  
G.T. Sarcona ◽  
M. Stewart ◽  
M.K. Hatalis
1996 ◽  
Vol 424 ◽  
Author(s):  
G. T. Sarcona ◽  
M. K. Hatalis

AbstractPolysilicon n-type thin film transistors have been fabricated with self-aligned cobalt and nickel silicide contacts to the source and drain regions. The sheet resistance of the source and drain without silicide is above 200 Ω/‪. The cobalt and nickel silicide films have sheet resistance below 30 Ω/‪. The contact resistance of the silicided devices is also much lower. The reduced extrinsic resistance is shown to improve the current in the “on” state, without increasing the leakage current. This study includes examination of cobalt and nickel silicidation on thin polysilicon films at temperatures compatible with polysilicon TFT-LCD processes.


2016 ◽  
Vol 16 (9) ◽  
pp. 9756-9760 ◽  
Author(s):  
Hyung Yoon Kim ◽  
Jae Hyo Park ◽  
Ki Hwan Seok ◽  
Zohreh Kiaee ◽  
Hee Jae Chae ◽  
...  

2017 ◽  
Vol 129 ◽  
pp. 6-9 ◽  
Author(s):  
Sol Kyu Lee ◽  
Ki Hwan Seok ◽  
Hee Jae Chae ◽  
Yong Hee Lee ◽  
Ji Su Han ◽  
...  

2017 ◽  
Vol 132 ◽  
pp. 73-79 ◽  
Author(s):  
Hyung Yoon Kim ◽  
Ki Hwan Seok ◽  
Hee Jae Chae ◽  
Sol Kyu Lee ◽  
Yong Hee Lee ◽  
...  

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.


2010 ◽  
Vol 130 (2) ◽  
pp. 161-166
Author(s):  
Yoshinori Ishikawa ◽  
Yasuo Wada ◽  
Toru Toyabe ◽  
Ken Tsutsui

2015 ◽  
Vol 135 (6) ◽  
pp. 192-198 ◽  
Author(s):  
Shinnosuke Iwamatsu ◽  
Yutaka Abe ◽  
Toru Yahagi ◽  
Seiya Kobayashi ◽  
Kazushige Takechi ◽  
...  

2003 ◽  
Vol 771 ◽  
Author(s):  
Michael C. Hamilton ◽  
Sandrine Martin ◽  
Jerzy Kanicki

AbstractWe have investigated the effects of white-light illumination on the electrical performance of organic polymer thin-film transistors (OP-TFTs). The OFF-state drain current is significantly increased, while the drain current in the strong accumulation regime is relatively unaffected. At the same time, the threshold voltage is decreased and the subthreshold slope is increased, while the field-effect mobility of the charge carriers is not affected. The observed effects are explained in terms of the photogeneration of free charge carriers in the channel region due to the absorbed photons.


2013 ◽  
Vol E96.C (11) ◽  
pp. 1360-1366 ◽  
Author(s):  
Ichiro FUJIEDA ◽  
Tse Nga NG ◽  
Tomoya HOSHINO ◽  
Tomonori HANASAKI

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