The effect of hydrogen on trap generation, positive charge trapping, and time-dependent dielectric breakdown of gate oxides

1988 ◽  
Vol 9 (6) ◽  
pp. 287-289 ◽  
Author(s):  
Y. Nissan-Cohen ◽  
T. Gorczyca
Keyword(s):  
Positive Charge ◽  
Dielectric Breakdown ◽  
Charge Trapping ◽  
Time Dependent ◽  
Gate Oxides ◽  
Time Dependent Dielectric Breakdown

SiON and SiO2/HfSiON gate oxides time dependent dielectric breakdown measurements at nanoscale in ultra high vacuum

2011 ◽  
Vol 88 (7) ◽  
pp. 1376-1379 ◽  
Author(s):  
P. Delcroix ◽  
S. Blonkowski ◽  
M. Kogelschatz ◽  
M. Rafik ◽  
O. Gourhant ◽  
...  
Keyword(s):  
Dielectric Breakdown ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Time Dependent ◽  
Gate Oxides ◽  
Time Dependent Dielectric Breakdown

Gate bias polarity dependence of charge trapping and time-dependent dielectric breakdown in nitrided and reoxidized nitrided oxides

1989 ◽  
Vol 10 (10) ◽  
pp. 443-445 ◽  
Author(s):  
A.T. Wu ◽  
V. Murali ◽  
J. Nulman ◽  
B. Triplett ◽  
D.B. Fraser ◽  
...  
Keyword(s):  
Dielectric Breakdown ◽  
Charge Trapping ◽  
Time Dependent ◽  
Gate Bias ◽  
Time Dependent Dielectric Breakdown

Assessment of Reliability of cap layers used in Cu-Black DiamondTM Interconnects

2003 ◽  
Vol 766 ◽  
Author(s):  
Ahila Krishnamoorthy ◽  
N.Y. Huang ◽  
Shu-Yunn Chong
Keyword(s):  
Dielectric Layer ◽  
Dielectric Breakdown ◽  
Copper Ions ◽  
Dielectric Strength ◽  
Time Dependent ◽  
Breakdown Field ◽  
Field Range ◽  
Time Dependent Dielectric Breakdown ◽  
Voltage Ramp ◽  
Low K

AbstractBlack DiamondTM. (BD) is one of the primary candidates for use in copper-low k integration. Although BD is SiO2 based, it is vastly different from oxide in terms of dielectric strength and reliability. One of the main reliability concerns is the drift of copper ions under electric field to the surrounding dielectric layer and this is evaluated by voltage ramp (V-ramp) and time dependent dielectric breakdown (TDDB). Metal 1 and Metal 2 intralevel comb structures with different metal widths and spaces were chosen for dielectric breakdown studies. Breakdown field of individual test structures were obtained from V-ramp tests in the temperature range of 30 to 150°C. TDDB was performed in the field range 0.5 – 2 MV/cm. From the leakage between combs at the same level (either metal 1 or metal 2) Cu drift through SiC/BD or SiN/BD interface was characterized. It was found that Cu/barrier and barrier/low k interfaces functioned as easy paths for copper drift thereby shorting the lines. Cu/SiC was found to provide a better interface than Cu/SiN.

Noise Analysis of the Leakage Current in Time-Dependent Dielectric Breakdown in a GaN SLCFET

2021 ◽  
Vol 68 (5) ◽  
pp. 2220-2225
Author(s):  
Stefano Dalcanale ◽  
Michael J. Uren ◽  
Josephine Chang ◽  
Ken Nagamatsu ◽  
Justin A. Parke ◽  
...  
Keyword(s):  
Leakage Current ◽  
Dielectric Breakdown ◽  
Noise Analysis ◽  
Time Dependent ◽  
Time Dependent Dielectric Breakdown

Study of Time Dependent Dielectric Breakdown Distribution in Ultrathin Gate Oxide

2007 ◽  
Vol 46 (No. 28) ◽  
pp. L691-L692 ◽  
Author(s):  
Takashi Miyakawa ◽  
Tsutomu Ichiki ◽  
Junichi Mitsuhashi ◽  
Kazutoshi Miyamoto ◽  
Tetsuo Tada ◽  
...  
Keyword(s):  
Dielectric Breakdown ◽  
Gate Oxide ◽  
Time Dependent ◽  
Time Dependent Dielectric Breakdown
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