Gate bias polarity dependence of charge trapping and time-dependent dielectric breakdown in nitrided and reoxidized nitrided oxides

1989 ◽  
Vol 10 (10) ◽  
pp. 443-445 ◽  
Author(s):  
A.T. Wu ◽  
V. Murali ◽  
J. Nulman ◽  
B. Triplett ◽  
D.B. Fraser ◽  
...  
Keyword(s):  
Dielectric Breakdown ◽  
Charge Trapping ◽  
Time Dependent ◽  
Gate Bias ◽  
Time Dependent Dielectric Breakdown

Reliability and Ruggedness of Planar Silicon Carbide MOSFETs

2019 ◽  
Vol 963 ◽  
pp. 782-787
Author(s):  
Kevin Matocha ◽  
In Hwan Ji ◽  
Sauvik Chowdhury
Keyword(s):  
Silicon Carbide ◽  
Threshold Voltage ◽  
Dielectric Breakdown ◽  
Gate Oxide ◽  
Time Dependent ◽  
Gate Bias ◽  
Constant Voltage ◽  
Time Dependent Dielectric Breakdown ◽  
Planar Silicon ◽  
State Of Art

The reliability and ruggedness of Monolith/Littelfuse planar SiC MOSFETs have been evaluated using constant voltage time-dependent dielectric breakdown for gate oxide wearout predictions, showing estimated > 100 year life at VGS=+25V and T=175C. Using extended time high-temperature gate bias, we have shown < 250 mV threshold voltage shifts for > 5000 hours under VGS=+25V and negligible threshold voltage shifts for > 2500 hours under VGS=-10V, both at T=175C. Under unclamped inductive switching, these 1200V, 80 mOhm SiC MOSFETs survive 1000 mJ of avalanche energy, meeting state-of-art ruggedness for 1200V SiC MOSFETs.

SiC MOSFET Reliability Update

2012 ◽  
Vol 717-720 ◽  
pp. 1073-1076 ◽  
Author(s):  
Mrinal K. Das ◽  
Sarah K. Haney ◽  
Jim Richmond ◽  
Anthony Olmedo ◽  
Q. Jon Zhang ◽  
...  
Keyword(s):  
High Temperature ◽  
Dielectric Breakdown ◽  
Gate Oxide ◽  
Time Dependent ◽  
Stable Operation ◽  
Gate Bias ◽  
Time Dependent Dielectric Breakdown ◽  
Mos Devices ◽  
Oxide Reliability ◽  
Made In

Significant advancement has been made in the gate oxide reliability of SiC MOS devices to enable the commercial release of Cree’s Z-FET™ product. This paper discusses the key reliability results from Time-Dependent-Dielectric-Breakdown (TDDB) and High Temperature Gate Bias (HTGB) measurements that indicate that the SiC MOSFETs can demonstrate excellent lifetime and stable operation in the field.

Assessment of Reliability of cap layers used in Cu-Black DiamondTM Interconnects

2003 ◽  
Vol 766 ◽  
Author(s):  
Ahila Krishnamoorthy ◽  
N.Y. Huang ◽  
Shu-Yunn Chong
Keyword(s):  
Dielectric Layer ◽  
Dielectric Breakdown ◽  
Copper Ions ◽  
Dielectric Strength ◽  
Time Dependent ◽  
Breakdown Field ◽  
Field Range ◽  
Time Dependent Dielectric Breakdown ◽  
Voltage Ramp ◽  
Low K

AbstractBlack DiamondTM. (BD) is one of the primary candidates for use in copper-low k integration. Although BD is SiO2 based, it is vastly different from oxide in terms of dielectric strength and reliability. One of the main reliability concerns is the drift of copper ions under electric field to the surrounding dielectric layer and this is evaluated by voltage ramp (V-ramp) and time dependent dielectric breakdown (TDDB). Metal 1 and Metal 2 intralevel comb structures with different metal widths and spaces were chosen for dielectric breakdown studies. Breakdown field of individual test structures were obtained from V-ramp tests in the temperature range of 30 to 150°C. TDDB was performed in the field range 0.5 – 2 MV/cm. From the leakage between combs at the same level (either metal 1 or metal 2) Cu drift through SiC/BD or SiN/BD interface was characterized. It was found that Cu/barrier and barrier/low k interfaces functioned as easy paths for copper drift thereby shorting the lines. Cu/SiC was found to provide a better interface than Cu/SiN.

Noise Analysis of the Leakage Current in Time-Dependent Dielectric Breakdown in a GaN SLCFET

2021 ◽  
Vol 68 (5) ◽  
pp. 2220-2225
Author(s):  
Stefano Dalcanale ◽  
Michael J. Uren ◽  
Josephine Chang ◽  
Ken Nagamatsu ◽  
Justin A. Parke ◽  
...  
Keyword(s):  
Leakage Current ◽  
Dielectric Breakdown ◽  
Noise Analysis ◽  
Time Dependent ◽  
Time Dependent Dielectric Breakdown

Study of Time Dependent Dielectric Breakdown Distribution in Ultrathin Gate Oxide

2007 ◽  
Vol 46 (No. 28) ◽  
pp. L691-L692 ◽  
Author(s):  
Takashi Miyakawa ◽  
Tsutomu Ichiki ◽  
Junichi Mitsuhashi ◽  
Kazutoshi Miyamoto ◽  
Tetsuo Tada ◽  
...  
Keyword(s):  
Dielectric Breakdown ◽  
Gate Oxide ◽  
Time Dependent ◽  
Time Dependent Dielectric Breakdown

Constant-current time dependent dielectric breakdown in thick amorphous SiO2 capacitors

2021 ◽  
Author(s):  
Federico Giuliano ◽  
Susanna Reggiani ◽  
Elena Gnani ◽  
Antonio Gnudi ◽  
Mattia Rossetti ◽  
...  
Keyword(s):  
Dielectric Breakdown ◽  
Time Dependent ◽  
Constant Current ◽  
Amorphous Sio2 ◽  
Current Time ◽  
Time Dependent Dielectric Breakdown

A New Direct Measurement Method of Time Dependent Dielectric Breakdown at High Frequency

2020 ◽  
Vol 41 (10) ◽  
pp. 1460-1463
Author(s):  
Melissa Arabi ◽  
Xavier Garros ◽  
Jacques Cluzel ◽  
Mustapha Rafik ◽  
Xavier Federspiel ◽  
...  
Keyword(s):  
Direct Measurement ◽  
High Frequency ◽  
Measurement Method ◽  
Dielectric Breakdown ◽  
Time Dependent ◽  
Time Dependent Dielectric Breakdown ◽  
Direct Measurement Method
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