On/off current ratio in P-channel poly-Si MOSFETs: dependence on hot-carrier stress conditions

1990 ◽  
Vol 11 (8) ◽  
pp. 346-348 ◽  
Author(s):  
M. Rodder
Keyword(s):  
Stress Conditions ◽  
Current Ratio ◽  
Hot Carrier ◽  
Hot Carrier Stress

scholarly journals Correlated Time-0 and Hot-Carrier Stress Induced FinFET Parameter Variabilities: Modeling Approach

Micromachines ◽  
2020 ◽  
Vol 11 (7) ◽  
pp. 657
Author(s):  
Alexander Makarov ◽  
Philippe Roussel ◽  
Erik Bury ◽  
Michiel Vandemaele ◽  
Alessio Spessot ◽  
...  
Keyword(s):  
Correlation Analysis ◽  
Simulation Model ◽  
Drain Current ◽  
Operating Regime ◽  
Statistical Simulation ◽  
Stress Conditions ◽  
Hot Carrier ◽  
Modeling Approach ◽  
Hot Carrier Stress ◽  
Random Traps

We identify correlation between the drain currents in pristine n-channel FinFET transistors and changes in time-0 currents induced by hot-carrier stress. To achieve this goal, we employ our statistical simulation model for hot-carrier degradation (HCD), which considers the effect of random dopants (RDs) on HCD. For this analysis we generate a set of 200 device instantiations where each of them has its own unique configuration of RDs. For all “samples” in this ensemble we calculate time-0 currents (i.e., currents in undamaged FinFETs) and then degradation characteristics such as changes in the linear drain current and device lifetimes. The robust correlation analysis allows us to identify correlation between transistor lifetimes and drain currents in unstressed devices, which implies that FinFETs with initially higher currents degrade faster, i.e., have more prominent linear drain current changes and shorter lifetimes. Another important result is that although at stress conditions the distribution of drain currents becomes wider with stress time, in the operating regime drain current variability diminishes. Finally, we show that if random traps are also taken into account, all the obtained trends remain the same.

HOT CARRIER STRESS INDUCED CHANGES IN MOST TRANSCONDUCTANCE STRUCTURE

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-779-C4-782 ◽  
Author(s):  
C. BERGONZONI ◽  
R. BENECCHI ◽  
P. CAPRARA
Keyword(s):  
Hot Carrier ◽  
Hot Carrier Stress ◽  
Induced Changes

Degradation induced by TID radiation and hot-carrier stress in 130-nm short channel PDSOI NMOSFETs

2017 ◽  
Vol 74 ◽  
pp. 74-80 ◽  
Author(s):  
Lihua Dai ◽  
Xiaonian Liu ◽  
Mengying Zhang ◽  
Leqing Zhang ◽  
Zhiyuan Hu ◽  
...  
Keyword(s):  
Short Channel ◽  
Hot Carrier ◽  
Hot Carrier Stress

Hot Carrier Stress Effects of SiO2 Passivated AlGaN/GaN High Electron Mobility Transistors

2019 ◽  
Vol 3 (5) ◽  
pp. 213-220 ◽  
Author(s):  
Min-Woo Ha ◽  
Young-Hwan Choi ◽  
Joon-Hyun Park ◽  
Kwang-Seok Seo ◽  
Min-Koo Han
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Hot Carrier ◽  
Stress Effects ◽  
Electron Mobility Transistors ◽  
Hot Carrier Stress
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