High-gain pseudomorphic InGaAs base ballistic hot-electron device

1989 ◽  
Vol 10 (2) ◽  
pp. 73-75 ◽  
Author(s):  
K. Seo ◽  
M. Heiblum ◽  
C.M. Knoedler ◽  
J.E. Oh ◽  
J. Pamulapati ◽  
...  
Keyword(s):  
High Gain ◽  
Hot Electron ◽  
Electron Device

High‐gain lateral hot‐electron device

1989 ◽  
Vol 55 (14) ◽  
pp. 1421-1423 ◽  
Author(s):  
A. Palevski ◽  
C. P. Umbach ◽  
M. Heiblum
Keyword(s):  
High Gain ◽  
Hot Electron ◽  
Electron Device

scholarly journals Manifestation of the spontaneous parity-time symmetry breaking phase transition in hot-electron photodetection based on a tri-layered metamaterial

Nanophotonics ◽  
2019 ◽  
Vol 8 (3) ◽  
pp. 495-504 ◽  
Author(s):  
Qiang Bai
Keyword(s):  
Phase Transition ◽  
Theoretical Model ◽  
Symmetry Breaking ◽  
Pt Symmetry ◽  
Coupled Mode Theory ◽  
Hot Electron ◽  
Electron Device ◽  
Coupled Mode ◽  
Time Symmetry ◽  
Existence Conditions

AbstractWe theoretically and numerically demonstrate that the spontaneous parity-time (PT) symmetry breaking phase transition can be realized respectively by using two independent tuning ways in a tri-layered metamaterial that consists of periodic array of metal-semiconductor Schottky junctions. The existence conditions of PT symmetry and its phase transition are obtained by using a theoretical model based on the coupled mode theory. A hot-electron photodetection based on the same tri-layered metamaterial is proposed, which can directly show the spontaneous PT symmetry breaking phase transition in photocurrent and possesses dynamical tunability and switchability. This work extends the concept of PT symmetry into the hot-electron photodetection, enriches the functionality of the metamaterial and the hot-electron device, and has varieties of potential and important applications in optoelectronics, photodetection, photovoltaics, and photocatalytics.

Broad-band microwave detection with a novel 2D hot-electron device

1998 ◽  
Vol 23 (5) ◽  
pp. 1079-1082 ◽  
Author(s):  
S. Barbieri ◽  
F. Mango ◽  
F. Beltram ◽  
M. Lazzarino ◽  
L. Sorba
Keyword(s):  
Broad Band ◽  
Hot Electron ◽  
Electron Device ◽  
Microwave Detection

RELATIVISTIC CORRECTIONS TO BALLISTIC QUANTUM TUNNELING THROUGH Ga1−xAlxAs BARRIERS

1991 ◽  
Vol 05 (13) ◽  
pp. 881-888
Author(s):  
H. CRUZ ◽  
A. HERNANDEZ-CABRERA ◽  
A. MUÑOZ
Keyword(s):  
Effective Mass ◽  
Transmission Coefficient ◽  
Analytical Solutions ◽  
Quantum Tunneling ◽  
Type Equation ◽  
Hot Electron ◽  
Electron Device ◽  
Relativistic Corrections ◽  
Dirac Type ◽  
Quantum Electron

Analytical solutions of a Dirac-type equation as effective mass equation. for electrons are obtained and by means of these solutions we have analytically calculated the relativistic transmission coefficient for quantum electron ballistic tunneling through Ga 1−x Al x As -GaAs single barriers. This solution for the transmission coefficient is applied to the tunnel injector of a hot electron device finding that relativistic corrections yield small but significant shifts in the transmittance-voltage characteristics.

scholarly journals Narrowband photodetection in the near-infrared with a plasmon-induced hot electron device

2013 ◽  
Vol 4 (1) ◽  
Author(s):  
Ali Sobhani ◽  
Mark W. Knight ◽  
Yumin Wang ◽  
Bob Zheng ◽  
Nicholas S. King ◽  
...  
Keyword(s):  
Near Infrared ◽  
Hot Electron ◽  
Electron Device

scholarly journals Pseudomorphic InGaAs base ballistic hot‐electron device

1988 ◽  
Vol 53 (20) ◽  
pp. 1946-1948 ◽  
Author(s):  
K. Seo ◽  
M. Heiblum ◽  
C. M. Knoedler ◽  
W‐P. Hong ◽  
P. Bhattacharya
Keyword(s):  
Hot Electron ◽  
Electron Device

Processing Of Shallow (Rp<150Å) Implanted Layers With Electron Beams

1982 ◽  
Vol 13 ◽  
Author(s):  
G.B. Mcmillan ◽  
J.M. Shannon ◽  
H. Ahmed
Keyword(s):  
Annealing Temperature ◽  
Computer Modelling ◽  
Electron Beams ◽  
Hot Electron ◽  
Electron Device ◽  
Device Structures ◽  
Diffusion Effects ◽  
Doped Silicon ◽  
Multiple Scan ◽  
High Concentrations

ABSTRACTThe multiple-scan method of electron beam annealing has been used to activate shallow (Rp<150Å), highly doped silicon layers produced by ion implantation of arsenic at 10keV. Beam conditions have been optimised (600Wcm−2 for 100ms) to produce essentially undiffused layers, as determined by high resolution SIMS, containing high concentrations of electrically active arsenic impurities. Computer modelling of diffusion effects in such layers has been used to identify optimum beam conditions and the calculations have been compared with experimental results. Hot electron device structures, which depend on negligible diffusion and high electrical activity, have been fabricated using the multiplescan method with a peak annealing temperature of 900°C.

Probing into the double identity of Cu in bimetallic CuAg-TNTAs hot-electron device for photo-hydrogen conversion

2021 ◽  
Author(s):  
Zexin Yu ◽  
Yunlong Gao ◽  
Li-Xia Sang ◽  
Lei Lei
Keyword(s):  
Charge Separation ◽  
Tio2 Nanotube Arrays ◽  
Tio2 Nanotube ◽  
Photon Absorption ◽  
Nanotube Arrays ◽  
Hot Electron ◽  
Electron Device ◽  
Bimetallic Nanostructures

Bimetallic nanostructures have been endowed with the function of enhancing photon absorption and charge separation in photo-hydrogen conversion. Bimetallic CuAg/TiO2 nanotube arrays (TNTAs) were synthesized with the different ratio of...

Negative differential conductance in a lateral hot-electron device

1994 ◽  
Vol 9 (5S) ◽  
pp. 922-925
Author(s):  
J C Wu ◽  
M N Wybourne ◽  
C Berven ◽  
S M Goodnick ◽  
D D Smith
Keyword(s):  
Differential Conductance ◽  
Hot Electron ◽  
Negative Differential Conductance ◽  
Electron Device
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