Collector offset voltage of heterojunction bipolar transistors grown by molecular beam epitaxy

T. Won; S. Iyer; S. Agarwala; H. Morkoc

doi:10.1109/55.31744

Collector offset voltage of heterojunction bipolar transistors grown by molecular beam epitaxy

IEEE Electron Device Letters ◽

10.1109/55.31744 ◽

1989 ◽

Vol 10 (6) ◽

pp. 274-276 ◽

Cited By ~ 53

Author(s):

T. Won ◽

S. Iyer ◽

S. Agarwala ◽

H. Morkoc

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

Offset Voltage

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Molecular Beam Epitaxy of Ga0.99Be0.01As for very high Speed Heterojunction Bipolar Transistors

Properties of Impurity States in Superlattice Semiconductors - NATO ASI Series ◽

10.1007/978-1-4684-5553-3_3 ◽

1988 ◽

pp. 19-28 ◽

Cited By ~ 2

Author(s):

J. L. Liévin ◽

F. Alexandre ◽

C. Dubon-Chevallier

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

High Speed ◽

Molecular Beam ◽

Bipolar Transistors ◽

Very High

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Fully Strained Heavily Carbon-Doped GaAs Grown by Gas-Source Molecular Beam Epitaxy Using Carbontetrabromide and Its Application to InGaP/GaAs Heterojunction Bipolar Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.1866 ◽

1997 ◽

Vol 36 (Part 1, No. 3B) ◽

pp. 1866-1868 ◽

Cited By ~ 11

Author(s):

Kiyoshi Ouchi ◽

Tomoyoshi Mishima ◽

Kazuhiro Mochizuki ◽

Tohru Oka ◽

Tomonori Tanoue

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

Carbon Doped ◽

Gas Source

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Electrical Characterization of SiGe Heterojunction Bipolar Transistors (HBTs) Formed by Molecular Beam Epitaxy (MBE)

Condensed Systems of Low Dimensionality - NATO ASI Series ◽

10.1007/978-1-4684-1348-9_51 ◽

1991 ◽

pp. 669-674

Author(s):

D. J. Godfrey

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Electrical Characterization ◽

Bipolar Transistors

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High performance GaAsSb∕InP double heterojunction bipolar transistors grown by gas-source molecular beam epitaxy

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2190678 ◽

2006 ◽

Vol 24 (3) ◽

pp. 1564 ◽

Cited By ~ 2

Author(s):

Bing-Ruey Wu ◽

Benjamin F. Chu-Kung ◽

Milton Feng ◽

K. Y. Cheng

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

High Performance ◽

Molecular Beam ◽

Bipolar Transistors ◽

Gas Source ◽

Double Heterojunction

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GaAs/AlGaAs heterojunction bipolar transistors with a base doping 10[sup 20] cm[sup −3] grown by solid-source molecular beam epitaxy using CBr[sub 4]

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.590224 ◽

1998 ◽

Vol 16 (3) ◽

pp. 972 ◽

Cited By ~ 6

Author(s):

M. Micovic

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

Base Doping

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High-gain InAlAs/InGaAs npn single heterojunction bipolar transistors grown by molecular beam epitaxy

LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels ◽

10.1109/iciprm.1992.235671 ◽

2003 ◽

Author(s):

H.-H. Lin ◽

C.-H. Huang

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

High Gain ◽

Bipolar Transistors

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Characteristics of pnp InGaAlAs/InGaAs heterojunction bipolar transistors grown by molecular beam epitaxy

LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels ◽

10.1109/iciprm.1992.235673 ◽

2003 ◽

Author(s):

A. Dodabalapur ◽

T.Y. Chang

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors

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InGaP/GaAs/InGaP double-heterojunction bipolar transistors grown by solid-source molecular-beam epitaxy with a valved phosphorus cracker

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.588905 ◽

1996 ◽

Vol 14 (3) ◽

pp. 2225 ◽

Cited By ~ 3

Author(s):

T. P. Chin

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

Double Heterojunction

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Asymmetric characteristics of InGaP/GaAs double-heterojunction bipolar transistors grown by solid source molecular beam epitaxy

Semiconductor Science and Technology ◽

10.1088/0268-1242/7/3/026 ◽

1992 ◽

Vol 7 (3) ◽

pp. 425-428 ◽

Cited By ~ 7

Author(s):

T W Lee ◽

P A Houston ◽

R Kumar ◽

G Hill ◽

M Hopkinson

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

Double Heterojunction

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Metamorphic InP/InGaAs double-heterojunction bipolar transistors on GaAs grown by molecular-beam epitaxy

Applied Physics Letters ◽

10.1063/1.1306657 ◽

2000 ◽

Vol 77 (6) ◽

pp. 869-871 ◽

Cited By ~ 43

Author(s):

H. Q. Zheng ◽

K. Radhakrishnan ◽

H. Wang ◽

K. H. Yuan ◽

S. F. Yoon ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

Double Heterojunction

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