The electron impact ionization rate and breakdown voltage in GaAs/Ga/sub 0.7/Al/sub 0.3/As MQW structures

1989 ◽  
Vol 10 (7) ◽  
pp. 294-296 ◽  
Author(s):  
J.P.R. David ◽  
J.S. Marsland ◽  
J.S. Roberts
2006 ◽  
Vol 527-529 ◽  
pp. 1367-1370
Author(s):  
Lin Zhu ◽  
Peter A. Losee ◽  
T. Paul Chow ◽  
Kenneth A. Jones ◽  
Charles Scozzie ◽  
...  

4H-SiC PiN rectifiers with implanted anode and single-zone JTE were fabricated using AlN capped anneal. The surface damage during the high temperature activation anneal is significantly reduced by using AlN capped anneal. The forward drop of the PiN rectifiers at 100A/cm2 is 3.0V while the leakage current is less than 10-7A/cm2 up to 90% breakdown voltage at room temperature. With 6μm thick and 2×1016cm-3 doped drift layer, the PiN rectifiers can achieve near ideal breakdown voltage up to 1050V. Hole impact ionization rate was extracted and compared with previously reported results.


2021 ◽  
Vol 66 (8) ◽  
pp. 691
Author(s):  
S. Dilmi ◽  
A. Boumali

We report an estimate of the cross-section and rate of electron-impact ionization of Li. The FAC code (Flexible Atomic Code) is used in order to determine the cross-section and to calculate the level of energy. We evaluate the effect of electron energy distribution functions on the measurement of the ionization rate for a non-Maxwellian energy distribution, if the fraction of hot electrons is small. In several types of plasma, it has been observed that certain (hot) electrons are governed by a non-Maxwellian energy distribution. These electrons affect the line spectra and other characteristics of plasma. By using a non-Maxwellian distribution of energies, we revealed the sensitivity of the electron-impact ionization rate of Li to types of the electron energy distribution and to the fraction of hot electrons.


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