Simulations of electron impact ionization rate in GaAs in nonuniform electric fields

1986 ◽  
Vol 60 (7) ◽  
pp. 2626-2629 ◽  
Author(s):  
K. Kim ◽  
K. Hess
Keyword(s):  
Electron Impact ◽  
Electric Fields ◽  
Impact Ionization ◽  
Ionization Rate ◽  
Electron Impact Ionization ◽  
Impact Ionization Rate

scholarly journals Estimation of Electron Impact Ionization Rates of Li Using a Non-Maxwellian Distribution Function

2021 ◽  
Vol 66 (8) ◽  
pp. 691
Author(s):  
S. Dilmi ◽  
A. Boumali
Keyword(s):  
Energy Distribution ◽  
Electron Impact ◽  
Electron Energy ◽  
Cross Section ◽  
Impact Ionization ◽  
Ionization Rate ◽  
Electron Impact Ionization ◽  
Maxwellian Distribution ◽  
Hot Electrons ◽  
Electron Energy Distribution

We report an estimate of the cross-section and rate of electron-impact ionization of Li. The FAC code (Flexible Atomic Code) is used in order to determine the cross-section and to calculate the level of energy. We evaluate the effect of electron energy distribution functions on the measurement of the ionization rate for a non-Maxwellian energy distribution, if the fraction of hot electrons is small. In several types of plasma, it has been observed that certain (hot) electrons are governed by a non-Maxwellian energy distribution. These electrons affect the line spectra and other characteristics of plasma. By using a non-Maxwellian distribution of energies, we revealed the sensitivity of the electron-impact ionization rate of Li to types of the electron energy distribution and to the fraction of hot electrons.

IMPACT IONIZATION AND HIGH FIELD EFFECTS IN WIDE BAND GAP SEMICONDUCTORS

2001 ◽  
Vol 11 (02) ◽  
pp. 511-524 ◽  
Author(s):  
M. REIGROTZKI ◽  
J. R. MADUREIRA ◽  
A. KULIGK ◽  
N. FITZER ◽  
R. REDMER ◽  
...  
Keyword(s):  
Electric Fields ◽  
High Field ◽  
Impact Ionization ◽  
Electron Distribution Function ◽  
Wide Band ◽  
Ionization Rate ◽  
Wide Bandgap ◽  
Bandgap Semiconductors ◽  
Impact Ionization Rate ◽  
The Impact

Impact ionization plays a crucial role for electron transport in wide-bandgap semiconductors at high electric fields. Therefore, a realistic band structure has to be used in calculations of the microscopic scattering rate, as well as high field quantum corrections such as the intercollisional field effect. Here we consider both, and evaluate the impact ionization rate for wide-bandgap materials such as ZnS. A pronounced softening of the impact ionization threshold is obtained, as found earlier for materials like Si and GaAs. This field dependent impact ionization rate is included within a full-band ensemble Monte Carlo simulation of high field transport in ZnS. Although the impact ionization rate itself is strongly affected, little effect is observed on measurable quantities such as the impact ionization coefficient or the electron distribution function itself.

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