Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors

J. Welser; J.L. Hoyt; J.F. Gibbons

doi:10.1109/55.285389

Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors

IEEE Electron Device Letters ◽

10.1109/55.285389 ◽

1994 ◽

Vol 15 (3) ◽

pp. 100-102 ◽

Cited By ~ 311

Author(s):

J. Welser ◽

J.L. Hoyt ◽

J.F. Gibbons

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si

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Experimental Determination of Shear Stress induced Electron Mobility Enhancements in Si and Biaxially Strained-Si Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.074101 ◽

2010 ◽

Vol 49 (7) ◽

pp. 074101 ◽

Cited By ~ 5

Author(s):

Olivier Weber ◽

Mitsuru Takenaka ◽

Shin-ichi Takagi

Keyword(s):

Shear Stress ◽

Metal Oxide ◽

Experimental Determination ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si

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Model of electron mobility in inversion layer of strained Si/Si1-xGex n type metal-oxide-semiconductor field-effect transistors

Acta Physica Sinica ◽

10.7498/aps.60.017202 ◽

2011 ◽

Vol 60 (1) ◽

pp. 017202

Author(s):

Li Bin ◽

Liu Hong-Xia ◽

Yuan Bo ◽

Li Jin ◽

Lu Feng-Ming

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si

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High-Electron-Mobility Ge n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y2O3

Applied Physics Express ◽

10.1143/apex.4.064201 ◽

2011 ◽

Vol 4 (6) ◽

pp. 064201 ◽

Cited By ~ 59

Author(s):

Tomonori Nishimura ◽

Choong Hyun Lee ◽

Toshiyuki Tabata ◽

Sheng Kai Wang ◽

Kosuke Nagashio ◽

...

Keyword(s):

High Pressure ◽

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility

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Electron Mobility Enhancement of Extremely Thin Body In$_{0.7}$Ga$_{0.3}$As-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Substrates by Metal–Oxide–Semiconductor Interface Buffer Layers

Applied Physics Express ◽

10.1143/apex.5.014201 ◽

2011 ◽

Vol 5 (1) ◽

pp. 014201 ◽

Cited By ~ 22

Author(s):

SangHyeon Kim ◽

Masafumi Yokoyama ◽

Noriyuki Taoka ◽

Ryo Iida ◽

Sunghoon Lee ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Buffer Layers ◽

Oxide Semiconductor ◽

Thin Body ◽

Semiconductor Interface ◽

Si Substrates

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Electron mobility characteristics of n-channel metal-oxide-semiconductor field-effect transistors fabricated on Ge-rich single- and dual-channel SiGe heterostructures

Journal of Applied Physics ◽

10.1063/1.1638610 ◽

2004 ◽

Vol 95 (3) ◽

pp. 1550-1555 ◽

Cited By ~ 11

Author(s):

Minjoo L. Lee ◽

Eugene A. Fitzgerald

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Dual Channel

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Electron Mobility Degradation and Interface Dipole Formation in Direct-Contact HfO$_{2}$/Si Metal–Oxide–Semiconductor Field-Effect Transistors

Applied Physics Express ◽

10.1143/apex.4.101101 ◽

2011 ◽

Vol 4 (10) ◽

pp. 101101 ◽

Cited By ~ 5

Author(s):

Noriyuki Miyata ◽

Hiroyuki Ishii ◽

Taro Itatani ◽

Tetsuji Yasuda

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Direct Contact ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Dipole ◽

Mobility Degradation

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Electron mobility enhancement in strained-germanium n-channel metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.2779845 ◽

2007 ◽

Vol 91 (10) ◽

pp. 102103 ◽

Cited By ~ 79

Author(s):

Y.-J. Yang ◽

W. S. Ho ◽

C.-F. Huang ◽

S. T. Chang ◽

C. W. Liu

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1499213 ◽

2002 ◽

Vol 92 (7) ◽

pp. 3745-3751 ◽

Cited By ~ 145

Author(s):

C. W. Leitz ◽

M. T. Currie ◽

M. L. Lee ◽

Z.-Y. Cheng ◽

D. A. Antoniadis ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

Limited Mobility ◽

Alloy Scattering

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Hole mobility enhancements in strained Si/Si1−yGey p-type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1−xGex (x

Applied Physics Letters ◽

10.1063/1.1423774 ◽

2001 ◽

Vol 79 (25) ◽

pp. 4246-4248 ◽

Cited By ~ 92

Author(s):

C. W. Leitz ◽

M. T. Currie ◽

M. L. Lee ◽

Z.-Y. Cheng ◽

D. A. Antoniadis ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

P Type

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High electron mobility germanium (Ge) metal oxide semiconductor field effect transistors (MOSFETs)

Silicon–Germanium (SiGe) Nanostructures ◽

10.1533/9780857091420.4.528 ◽

2011 ◽

pp. 528-550

Author(s):

A. Toriumi

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility

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