Extraction of DC base parasitic resistance of bipolar transistors based on impact-ionization-induced base current reversal

1993 ◽  
Vol 14 (9) ◽  
pp. 431-434 ◽  
Author(s):  
G. Verzellesi ◽  
R. Turetta ◽  
P. Pavan ◽  
A. Collini ◽  
A. Chantre ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Bipolar Transistors ◽  
Base Current ◽  
Parasitic Resistance ◽  
Current Reversal

Influence of impact-ionization-induced base current reversal on bipolar transistor parameters

1995 ◽  
Vol 42 (9) ◽  
pp. 1636-1646 ◽  
Author(s):  
L. Vendrame ◽  
E. Zabotto ◽  
A. Dal Fabbro ◽  
A. Zanini ◽  
G. Verzellesi ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Bipolar Transistor ◽  
Base Current ◽  
Current Reversal

A New Reverse Base Current (RBC) of the Bipolar Transistor Induced by Impact Ionization

1989 ◽  
Vol 28 (Part 2, No. 12) ◽  
pp. L2150-L2152 ◽  
Author(s):  
Koji Sakui ◽  
Takehiro Hasegawa ◽  
Tsuneaki Fuse ◽  
Toshiki Seshita ◽  
Seiichi Aritome ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Bipolar Transistor ◽  
Base Current

Electrical Measurement of the Bandgap of N+ and P+ SiGe Formed by Ge Ion Implantation

1997 ◽  
Vol 500 ◽  
Author(s):  
Akira Nishiyama ◽  
Osamu Arisumi ◽  
Makoto Yoshimi
Keyword(s):  
Ion Implantation ◽  
Theoretical Calculation ◽  
Temperature Dependence ◽  
Electrical Measurement ◽  
Bipolar Transistors ◽  
Floating Body ◽  
High Dose ◽  
Base Current ◽  
Source Regions ◽  
Heavily Doped

ABSTRACTN+ and p+ SiGe layers were formed in the source regions of SOI MOSFETs in order to suppress the floating-body effects by means of high-dose Ge implantation. The bandgaps of the layers were evaluated by measuring the temperature dependence of the base current of the source/channel/drain lateral bipolar transistors. It has been found that the reductions of the bandgaps due to the SiGe formation by the Ge implantation were relatively small, compared to those obtained by the theoretical calculation for heavily doped SiGe. It was also found that the bandgap reduction was larger for n+ layers than that for p+ layers.

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