Large Stark shift of the interband transition in two-step quantum wells

1993 ◽  
Vol 14 (6) ◽  
pp. 286-288 ◽  
Author(s):  
W.Q. Chen ◽  
S.M. Wang ◽  
T.G. Andersson
Keyword(s):  
Quantum Wells ◽  
Interband Transition ◽  
Stark Shift

Large asymmetric Stark shift in GaxIn1−xAs/InP/InAsyP1−y composite quantum wells

2003 ◽  
Vol 83 (14) ◽  
pp. 2838-2840 ◽  
Author(s):  
B. Aneeshkumar ◽  
A. Yu. Silov ◽  
M. R. Leys ◽  
J. H. Wolter
Keyword(s):  
Quantum Wells ◽  
Stark Shift

Absence of Stark shift in strained Si1−xGex/Si type‐I quantum wells

1996 ◽  
Vol 68 (15) ◽  
pp. 2097-2099 ◽  
Author(s):  
Y. Miyake ◽  
J. Y. Kim ◽  
Y. Shiraki ◽  
S. Fukatsu
Keyword(s):  
Quantum Wells ◽  
Stark Shift ◽  
Type I

Stark shift effects in rectangular and graded gap quantum wells

1999 ◽  
Vol 424 (2-3) ◽  
pp. 331-339 ◽  
Author(s):  
S.J. Vlaev ◽  
A.M. Miteva ◽  
D.A. Contreras-Solorio ◽  
V.R. Velasco
Keyword(s):  
Quantum Wells ◽  
Stark Shift

Why is a quantum-confined stark shift absent in type-I strained symmetric quantum wells?

1997 ◽  
Vol 175-176 ◽  
pp. 465-468 ◽  
Author(s):  
Y. Miyake ◽  
J.Y. Kim ◽  
Y. Shiraki ◽  
S. Fukatsu
Keyword(s):  
Quantum Wells ◽  
Stark Shift ◽  
Type I ◽  
Symmetric Quantum ◽  
Quantum Confined

scholarly journals Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84Multiple Quantum Wells on Ge Virtual Substrate

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Hung-Pin Hsu ◽  
Pong-Hong Yang ◽  
Jeng-Kuang Huang ◽  
Po-Hung Wu ◽  
Ying-Sheng Huang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Interband Transition ◽  
Multiple Quantum Well ◽  
Chemical Vapor ◽  
Detailed Comparison ◽  
Multiple Quantum ◽  
Temperature Dependent ◽  
Wide Range ◽  
Quantum Confined

We report a detailed characterization of a Ge/Si0.16Ge0.84multiple quantum well (MQW) structure on Ge-on-Si virtual substrate (VS) grown by ultrahigh vacuum chemical vapor deposition by using temperature-dependent photoreflectance (PR) in the temperature range from 10 to 300 K. The PR spectra revealed a wide range of optical transitions from the MQW region as well as transitions corresponding to the light-hole and heavy-hole splitting energies of Ge-on-Si VS. A detailed comparison of PR spectral line shape fits and theoretical calculation led to the identification of various quantum-confined interband transitions. The temperature-dependent PR spectra of Ge/Si0.16Ge0.84MQW were analyzed using Varshni and Bose-Einstein expressions. The parameters that describe the temperature variations of various quantum-confined interband transition energies were evaluated and discussed.

Quantum-Confined Stark Shift Due to Piezoelectric Effect in InGaAs/GaAs Quantum Wells Grown on (111)A GaAs

1995 ◽  
Vol 34 (Part 1, No. 2B) ◽  
pp. 1362-1366 ◽  
Author(s):  
Pablo O. Vaccaro ◽  
Kouji Tominaga ◽  
Makoto Hosoda ◽  
Kazuhisa Fujita ◽  
Toshihide Watanabe
Keyword(s):  
Quantum Wells ◽  
Piezoelectric Effect ◽  
Stark Shift ◽  
Quantum Confined
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