Absence of Stark shift in strained Si1−xGex/Si type‐I quantum wells

1996 ◽  
Vol 68 (15) ◽  
pp. 2097-2099 ◽  
Author(s):  
Y. Miyake ◽  
J. Y. Kim ◽  
Y. Shiraki ◽  
S. Fukatsu
Keyword(s):  
Quantum Wells ◽  
Stark Shift ◽  
Type I

Why is a quantum-confined stark shift absent in type-I strained symmetric quantum wells?

1997 ◽  
Vol 175-176 ◽  
pp. 465-468 ◽  
Author(s):  
Y. Miyake ◽  
J.Y. Kim ◽  
Y. Shiraki ◽  
S. Fukatsu
Keyword(s):  
Quantum Wells ◽  
Stark Shift ◽  
Type I ◽  
Symmetric Quantum ◽  
Quantum Confined

OPTICAL STUDIES OF TYPE I AND TYPE II RECOMBINATION IN GaAs-AlAs QUANTUM WELLS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-525-C5-528 ◽  
Author(s):  
K. J. MOORE ◽  
P. DAWSON ◽  
C. T. FOXON
Keyword(s):  
Quantum Wells ◽  
Type I ◽  
Type Ii ◽  
Optical Studies

Excitonic properties of type-I and type-II Si∕Si1−xGex quantum wells

2007 ◽  
Vol 101 (11) ◽  
pp. 113703 ◽  
Author(s):  
Andrey Chaves ◽  
J. Costa e Silva ◽  
J. A. K. Freire ◽  
G. A. Farias
Keyword(s):  
Quantum Wells ◽  
Type I ◽  
Type Ii ◽  
Excitonic Properties

Type I–type II anticrossing and enhanced Stark effect in asymmetric coupled quantum wells

1988 ◽  
Vol 53 (26) ◽  
pp. 2584-2586 ◽  
Author(s):  
J. E. Golub ◽  
P. F. Liao ◽  
D. J. Eilenberger ◽  
J. P. Harbison ◽  
L. T. Florez ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Stark Effect ◽  
Type I ◽  
Type Ii ◽  
Coupled Quantum Wells

2.8 μm emission from type-I quantum wells grown on InAsxP1−x/InP metamorphic graded buffers

2012 ◽  
Vol 101 (25) ◽  
pp. 251107 ◽  
Author(s):  
Daehwan Jung ◽  
Yuncheng Song ◽  
Lan Yu ◽  
Daniel Wasserman ◽  
Minjoo Larry Lee
Keyword(s):  
Quantum Wells ◽  
Type I

Type II Band Alignment inSi1−xGex/Si(001)Quantum Wells: The Ubiquitous Type I Luminescence Results from Band Bending

1997 ◽  
Vol 79 (2) ◽  
pp. 269-272 ◽  
Author(s):  
M. L. W. Thewalt ◽  
D. A. Harrison ◽  
C. F. Reinhart ◽  
J. A. Wolk ◽  
H. Lafontaine
Keyword(s):  
Quantum Wells ◽  
Band Alignment ◽  
Type I ◽  
Type Ii ◽  
Band Bending

Large asymmetric Stark shift in GaxIn1−xAs/InP/InAsyP1−y composite quantum wells

2003 ◽  
Vol 83 (14) ◽  
pp. 2838-2840 ◽  
Author(s):  
B. Aneeshkumar ◽  
A. Yu. Silov ◽  
M. R. Leys ◽  
J. H. Wolter
Keyword(s):  
Quantum Wells ◽  
Stark Shift

Photoluminescence Studies of [(CdSe)1(ZnSe)2]9-ZnSeTe Multiple Quantum Wells Under High Pressure

1994 ◽  
Vol 358 ◽  
Author(s):  
Z.P. Wang ◽  
Z.X. Liu ◽  
H.X. Han ◽  
J.Q. Zhang ◽  
G.H. Li ◽  
...  
Keyword(s):  
High Pressure ◽  
Quantum Wells ◽  
Liquid Nitrogen Temperature ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Type I ◽  
Short Period ◽  
Heavy Hole Subband ◽  
Photoluminescence Studies ◽  
Increasing Temperature

ABSTRACTWe have performed photoluminescence (PL) measurements at liquid nitrogen temperature under high pressure up to 5.5 GPa and in the temperature range 10-300 K at atmospheric pressure on {(ZnSe)30(ZnSe0.92Te0.08)30(ZnSe)30[(CdSe)1(ZnSe)2]9}x5 multiple quantum wells. The PL peaks, EB, E1 and Ew corresponding to the band edge luminescence in ZnSe barrier layer, the transitions from the first conduction subband to the heavy-hole subband in ZnSe0.92Te0.08 layers and [(CdSe)1(ZnSe)2]9 ultra short period superlattice quantum well (SPSLQW) layers have been observed. Experimental results show that ZnSe0.92Te0.08/ZnSe forms a type-I superlattice (SL) in contrast to the type-II ZnSe/ZnTe SL. The pressure coefficients of the EB, E1 and Ew exciton peaks have been determined as 67, 63 and 56 meV/GPa, respectively. With increasing temperature (or pressure), the E1 peak-intensity drastically decreases which is attributed to the thermal effect (or the appearance of many defects in ZnSe0.92Te0.08 under higher pressure).

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