High-speed InGaAlAs-InAlAs MQW directional coupler waveguide switch modules integrated with a spotsize converter having a lateral taper, thin-film core, and ridge

2000 ◽  
Vol 18 (3) ◽  
pp. 360-369 ◽  
Author(s):  
M. Kohtoku ◽  
K. Kawano ◽  
S. Sekine ◽  
H. Takeuchi ◽  
N. Yoshimoto ◽  
...  
2020 ◽  
Vol 41 (2) ◽  
pp. 160-168
Author(s):  
I. A. Rastegaev ◽  
I. I. Rastegaeva ◽  
D. L. Merson ◽  
V. A. Korotkov

2021 ◽  
Vol 13 (2) ◽  
pp. 1-9
Author(s):  
Xingrui Huang ◽  
Yang Liu ◽  
Zezheng Li ◽  
Huan Guan ◽  
Qingquan Wei ◽  
...  

2016 ◽  
Vol 23 (5) ◽  
pp. 1110-1117 ◽  
Author(s):  
M. V. Vitorino ◽  
Y. Fuchs ◽  
T. Dane ◽  
M. S. Rodrigues ◽  
M. Rosenthal ◽  
...  

A compact high-speed X-ray atomic force microscope has been developed forin situuse in normal-incidence X-ray experiments on synchrotron beamlines, allowing for simultaneous characterization of samples in direct space with nanometric lateral resolution while employing nanofocused X-ray beams. In the present work the instrument is used to observe radiation damage effects produced by an intense X-ray nanobeam on a semiconducting organic thin film. The formation of micrometric holes induced by the beam occurring on a timescale of seconds is characterized.


1990 ◽  
Vol 201 ◽  
Author(s):  
Djula Eres

AbstractThis paper discusses the use of supersonic jets of gaseous source molecules in thin film growth. Molecular jets in free form with no skimmers or collimators in the nozzle-substrate path were used in the investigation of basic film growth processes and in practical film growth applications. The Ge growth rates were found to depend linearly on the digermane jet intensity. Furthermore, the film thickness distributions showed excellent agreement with the distribution of digermane molecules in the jet. High epitaxial Ge growth rates were achieved on GaAs (100) substrates by utilizing high-intensity pulsed jets. The practical advantages and limitations of this film growth technique are evaluated, based on the results of microstructural and electrical measurements of heteroepitaxial Ge films on GaAs (100) substrates.


1972 ◽  
Vol 8 (6) ◽  
pp. 546-547 ◽  
Author(s):  
A. Ihaya ◽  
H. Furuta ◽  
H. Noda

1984 ◽  
Vol 5 (1) ◽  
Author(s):  
F. Auracher ◽  
D. Schicketanz ◽  
K.-H. Zeitler

SummaryWe report on a very fast (≥ 6 Gbit/s) Δβ-reversal directional-coupler modulator with low insertion loss (2 dB) for 1.3 μm wavelength operation. The design of the modulator permits easy and reproducible fabrication.


Author(s):  
Tiago Sutili ◽  
Rafael C. Figueiredo ◽  
Napoleão S. Ribeiro ◽  
Cristiano M. Gallep ◽  
Evandro Conforti

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