Optical bistability and all-optical switching in novel waveguide junctions with localized optical nonlinearity

1998 ◽  
Vol 16 (5) ◽  
pp. 833-840 ◽  
Author(s):  
H. Murata ◽  
M. Izutsu ◽  
T. Sueta
Keyword(s):  
Optical Switching ◽  
Optical Bistability ◽  
Optical Nonlinearity ◽  
All Optical ◽  
All Optical Switching

Third‐order optical nonlinearity and all‐optical switching in porous silicon

1995 ◽  
Vol 67 (3) ◽  
pp. 323-325 ◽  
Author(s):  
Fryad Z. Henari ◽  
Kai Morgenstern ◽  
Werner J. Blau ◽  
Vladimir A. Karavanskii ◽  
Vladimir S. Dneprovskii
Keyword(s):  
Porous Silicon ◽  
Optical Switching ◽  
Optical Nonlinearity ◽  
Third Order ◽  
All Optical ◽  
All Optical Switching

scholarly journals Ultrafast sub–30-fs all-optical switching based on gallium phosphide

2019 ◽  
Vol 5 (6) ◽  
pp. eaaw3262 ◽  
Author(s):  
Gustavo Grinblat ◽  
Michael P. Nielsen ◽  
Paul Dichtl ◽  
Yi Li ◽  
Rupert F. Oulton ◽  
...  
Keyword(s):  
Gallium Phosphide ◽  
Optical Switching ◽  
Near Infrared ◽  
Optical Nonlinearity ◽  
Photon Absorption ◽  
Linear Absorption ◽  
Two Photon Absorption ◽  
Two Photon ◽  
All Optical ◽  
All Optical Switching

Gallium phosphide (GaP) is one of the few available materials with strong optical nonlinearity and negligible losses in the visible (λ > 450 nm) and near-infrared regime. In this work, we demonstrate that a GaP film can generate sub–30-fs (full width at half maximum) transmission modulation of up to ~70% in the 600- to 1000-nm wavelength range. Nonlinear simulations using parameters measured by theZ-scan approach indicate that the transmission modulation arises from the optical Kerr effect and two-photon absorption. Because of the absence of linear absorption, no slower free-carrier contribution is detected. These findings place GaP as a promising ultrafast material for all-optical switching at modulation speeds of up to 20 THz.

Optical bistability in diode-end-pumped dual-wavelength Yb:YAG laser for all-optical switching

2020 ◽  
Vol 107 ◽  
pp. 110146
Author(s):  
Fengjiang Zhuang ◽  
Qihe Shu ◽  
Dongmei Gong ◽  
Ge Zhang
Keyword(s):  
Optical Switching ◽  
Optical Bistability ◽  
Dual Wavelength ◽  
All Optical ◽  
All Optical Switching

scholarly journals Off-Resonance Control and All-Optical Switching: Expanded Dimensions in Nonlinear Optics

2019 ◽  
Vol 9 (20) ◽  
pp. 4252 ◽  
Author(s):  
David S. Bradshaw ◽  
Kayn A. Forbes ◽  
David L. Andrews
Keyword(s):  
Optical Switching ◽  
Resonance Energy Transfer ◽  
Resonance Energy ◽  
Nonlinear Effects ◽  
Optical Nonlinearity ◽  
Moderate Intensity ◽  
Linear Absorption ◽  
Simultaneous Application ◽  
All Optical ◽  
All Optical Switching

The theory of non-resonant optical processes with intrinsic optical nonlinearity, such as harmonic generation, has been widely understood since the advent of the laser. In general, such effects involve multiphoton interactions that change the population of each input optical mode or modes. However, nonlinear effects can also arise through the input of an off-resonant laser beam that itself emerges unchanged. Many such effects have been largely overlooked. Using a quantum electrodynamical framework, this review provides detail on such optically nonlinear mechanisms that allow for a controlled increase or decrease in the intensity of linear absorption and fluorescence and in the efficiency of resonance energy transfer. The rate modifications responsible for these effects were achieved by the simultaneous application of an off-resonant beam with a moderate intensity, acting in a sense as an optical catalyst, conferring a new dimension of optical nonlinearity upon photoactive materials. It is shown that, in certain configurations, these mechanisms provide the basis for all-optical switching, i.e., the control of light-by-light, including an optical transistor scheme. The conclusion outlines other recently proposed all-optical switching systems.

scholarly journals All-Optical Switching of an Epsilon-Near-Zero Plasmon in ITO

2020 ◽  
Author(s):  
Justus Bohn ◽  
Ting-Shan Luk ◽  
Craig Tollerton ◽  
Sam Hutchins ◽  
Igal Brener ◽  
...  
Keyword(s):  
Plasmon Resonance ◽  
Indium Tin Oxide ◽  
Optical Switching ◽  
Pump Intensity ◽  
Optical Nonlinearity ◽  
Pump And Probe ◽  
Plasmon Frequency ◽  
All Optical ◽  
All Optical Switching ◽  
Epsilon Near Zero

Abstract Nonlinear optical devices and their implementation into modern nanophotonic architectures are constrained by their usually moderate nonlinear response. Recently, epsilon-near-zero (ENZ) materials have been found to have a strong optical nonlinearity, which can be enhanced through the use of cavities or nano-structuring. Here, we study the pump dependent properties of the plasmon resonance in the ENZ region in a thin layer of thin indium tin oxide (ITO). Exciting this mode using the Kretschmann-Raether configuration, we study reflection switching properties of a 60nm layer close to the resonant plasmon frequency. We demonstrate the thermal switching mechanism, which results in a shift in the plasmon resonance frequency of 20THz for a TM pump intensity of 75GW/cm2. For degenerate pump and probe frequencies, we highlight an additional coherent contribution, not previously isolated in ENZ nonlinear optics studies, which leads to an overall pump induced change in reflection from 1% to 45%.

OPTICAL BISTABILITY IN ALL-PASS MOBIUS CONFIGURATION MICRORING RESONATOR

2015 ◽  
Vol 76 (13) ◽  
Author(s):  
Ahmad Fakhrurrazi Ahmad Noorden ◽  
Mahdi Bahadoran ◽  
Kashif Chaudhary ◽  
Muhammad Safwan Aziz ◽  
Muhammad Arif Jalil ◽  
...  
Keyword(s):  
Hysteresis Loop ◽  
Optical Switching ◽  
Optical Bistability ◽  
Ring Resonator ◽  
Microring Resonator ◽  
Matrix Analysis ◽  
Threshold Power ◽  
Propagation Length ◽  
All Optical ◽  
All Optical Switching

A novel design of microring resonator called all-pass Mobius ring resonator is used to study optical bistability effect and spectral transmission for all-optical switching application with clockwise hysteresis loop operation. The bright soliton pulse is applied as the input source of the system. The propagation of the pulses within the system is simulated using the transfer matrix analysis. The all-pass Mobius ring resonator is able to operate under high nonlinearity as it has longer propagation length per roundtrip. The all-pass Mobius provides low transmission peak power of 3.65 mW as compared to the conventional all-pass configuration. The output-to-input relation of both design shows that the Mobius configuration is able to generate a higher hysteresis loop width of the bistable signal from 15.79 mW to 18.10 mW input power. The switching power of the optical bistability in Mobius configuration is 3.67 mW for threshold power of 16.95mW. This work shows the Mobius configuration is more suitable to be used for all-optical switching application as compared to the conventional all-pass ring resonator configuration.

Switching on or off the optical bistability based on the interaction of double dark resonances

2017 ◽  
Vol 31 (01) ◽  
pp. 1650245
Author(s):  
Xiang-An Yan ◽  
Li-Qiang Wang ◽  
Wei-Wei Zhang ◽  
Yao-Wu Liu ◽  
Han-Chen Liu
Keyword(s):  
Optical Switching ◽  
Optical Bistability ◽  
Microwave Field ◽  
Atomic System ◽  
Ring Cavity ◽  
Threshold Intensity ◽  
Bistable Behavior ◽  
Text Type ◽  
All Optical ◽  
All Optical Switching

We investigated the optical bistability (OB), which is manipulated by double dark resonances, in a [Formula: see text]-type four-level atomic system with a unidirectional ring cavity. It is found that, with the interaction of double dark resonances, the bistable threshold intensity becomes weaker and the hysteresis loop becomes narrower by tuning properly the detuning of microwave field. Also, the influence of the intensity and frequency detuning of the microwave field on switching on or off the optical bistable behavior is studied, which is used to provide the theoretical guidance for controlling and optimizing all optical switching process. Our numerical results are explained by using a dressed-state approach.

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