Third‐order optical nonlinearity and all‐optical switching in porous silicon

1995 ◽  
Vol 67 (3) ◽  
pp. 323-325 ◽  
Author(s):  
Fryad Z. Henari ◽  
Kai Morgenstern ◽  
Werner J. Blau ◽  
Vladimir A. Karavanskii ◽  
Vladimir S. Dneprovskii
Keyword(s):  
Porous Silicon ◽  
Optical Switching ◽  
Optical Nonlinearity ◽  
Third Order ◽  
All Optical ◽  
All Optical Switching

THIRD-ORDER NONLINEAR OPTICAL INVESTIGATION OF A NOVEL MATERIAL: (HEXADECYLTRIMETHYLAMMONIUM) BIS(4,5-DITHIOLE-1,3-DITHIOLE-2-THIONE)COPPER

2006 ◽  
Vol 15 (02) ◽  
pp. 179-184 ◽  
Author(s):  
L. FENG ◽  
Y. L. WANG ◽  
Q. REN ◽  
G. H. ZHANG ◽  
H. L. YANG ◽  
...  
Keyword(s):  
Optical Switching ◽  
Nonlinear Optical ◽  
Nonlinear Refraction ◽  
Optical Nonlinearity ◽  
Optical Investigation ◽  
Third Order ◽  
All Optical ◽  
Novel Material ◽  
Kerr Coefficient ◽  
All Optical Switching

A novel dmit2- salt: (hexadecyltrimethylammonium)bis(4,5-dithiolato-1,3-dithiole-2-thione)copper, abbreviated as HTCu , is synthesized and characterized for third-order optical nonlinearity by Z-scan technique at a wavelength of 1064 nm with laser duration of 30 ps. Z-scan spectra reveal a negative Kerr coefficient at 1064 nm and no nonlinear absorption was observed under this condition. The nonlinear refraction coefficient n2 and the second hyperpolarizability γ have been determined to be -1.51 × 10-11 and 1.36 × 10-30 esu , respectively, suggesting HTCu is a promising material for all-optical switching.

scholarly journals Ultrafast sub–30-fs all-optical switching based on gallium phosphide

2019 ◽  
Vol 5 (6) ◽  
pp. eaaw3262 ◽  
Author(s):  
Gustavo Grinblat ◽  
Michael P. Nielsen ◽  
Paul Dichtl ◽  
Yi Li ◽  
Rupert F. Oulton ◽  
...  
Keyword(s):  
Gallium Phosphide ◽  
Optical Switching ◽  
Near Infrared ◽  
Optical Nonlinearity ◽  
Photon Absorption ◽  
Linear Absorption ◽  
Two Photon Absorption ◽  
Two Photon ◽  
All Optical ◽  
All Optical Switching

Gallium phosphide (GaP) is one of the few available materials with strong optical nonlinearity and negligible losses in the visible (λ > 450 nm) and near-infrared regime. In this work, we demonstrate that a GaP film can generate sub–30-fs (full width at half maximum) transmission modulation of up to ~70% in the 600- to 1000-nm wavelength range. Nonlinear simulations using parameters measured by theZ-scan approach indicate that the transmission modulation arises from the optical Kerr effect and two-photon absorption. Because of the absence of linear absorption, no slower free-carrier contribution is detected. These findings place GaP as a promising ultrafast material for all-optical switching at modulation speeds of up to 20 THz.

scholarly journals Off-Resonance Control and All-Optical Switching: Expanded Dimensions in Nonlinear Optics

2019 ◽  
Vol 9 (20) ◽  
pp. 4252 ◽  
Author(s):  
David S. Bradshaw ◽  
Kayn A. Forbes ◽  
David L. Andrews
Keyword(s):  
Optical Switching ◽  
Resonance Energy Transfer ◽  
Resonance Energy ◽  
Nonlinear Effects ◽  
Optical Nonlinearity ◽  
Moderate Intensity ◽  
Linear Absorption ◽  
Simultaneous Application ◽  
All Optical ◽  
All Optical Switching

The theory of non-resonant optical processes with intrinsic optical nonlinearity, such as harmonic generation, has been widely understood since the advent of the laser. In general, such effects involve multiphoton interactions that change the population of each input optical mode or modes. However, nonlinear effects can also arise through the input of an off-resonant laser beam that itself emerges unchanged. Many such effects have been largely overlooked. Using a quantum electrodynamical framework, this review provides detail on such optically nonlinear mechanisms that allow for a controlled increase or decrease in the intensity of linear absorption and fluorescence and in the efficiency of resonance energy transfer. The rate modifications responsible for these effects were achieved by the simultaneous application of an off-resonant beam with a moderate intensity, acting in a sense as an optical catalyst, conferring a new dimension of optical nonlinearity upon photoactive materials. It is shown that, in certain configurations, these mechanisms provide the basis for all-optical switching, i.e., the control of light-by-light, including an optical transistor scheme. The conclusion outlines other recently proposed all-optical switching systems.

All-optical switching in photonic crystals based on porous silicon

2010 ◽  
Author(s):  
Svetlana M. Afonina ◽  
Eugene D. Maslennikov ◽  
Stanislav V. Zabotnov ◽  
Leonid A. Golovan
Keyword(s):  
Porous Silicon ◽  
Photonic Crystals ◽  
Optical Switching ◽  
All Optical ◽  
All Optical Switching

scholarly journals All-Optical Switching of an Epsilon-Near-Zero Plasmon in ITO

2020 ◽  
Author(s):  
Justus Bohn ◽  
Ting-Shan Luk ◽  
Craig Tollerton ◽  
Sam Hutchins ◽  
Igal Brener ◽  
...  
Keyword(s):  
Plasmon Resonance ◽  
Indium Tin Oxide ◽  
Optical Switching ◽  
Pump Intensity ◽  
Optical Nonlinearity ◽  
Pump And Probe ◽  
Plasmon Frequency ◽  
All Optical ◽  
All Optical Switching ◽  
Epsilon Near Zero

Abstract Nonlinear optical devices and their implementation into modern nanophotonic architectures are constrained by their usually moderate nonlinear response. Recently, epsilon-near-zero (ENZ) materials have been found to have a strong optical nonlinearity, which can be enhanced through the use of cavities or nano-structuring. Here, we study the pump dependent properties of the plasmon resonance in the ENZ region in a thin layer of thin indium tin oxide (ITO). Exciting this mode using the Kretschmann-Raether configuration, we study reflection switching properties of a 60nm layer close to the resonant plasmon frequency. We demonstrate the thermal switching mechanism, which results in a shift in the plasmon resonance frequency of 20THz for a TM pump intensity of 75GW/cm2. For degenerate pump and probe frequencies, we highlight an additional coherent contribution, not previously isolated in ENZ nonlinear optics studies, which leads to an overall pump induced change in reflection from 1% to 45%.

All-optical switching of Pendellösung effect in 1D porous silicon photonic crystal

2014 ◽  
Author(s):  
V. B. Novikov ◽  
S. E. Svyakhovskiy ◽  
B. I. Mantsyzov ◽  
A. I. Maydykovskiy ◽  
T. V. Murzina
Keyword(s):  
Photonic Crystal ◽  
Porous Silicon ◽  
Optical Switching ◽  
Silicon Photonic ◽  
All Optical ◽  
All Optical Switching
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