Limits to normal incidence electroabsorption modulation in GaAs/(GaAl)As multiple quantum well diodes

1989 ◽  
Vol 7 (7) ◽  
pp. 1101-1108 ◽  
Author(s):  
P.J. Stevens ◽  
G. Parry
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Normal Incidence ◽  
Multiple Quantum

Responsivity of multiple quantum well structures grown by MOCVD at normal incidence

2003 ◽  
Author(s):  
Vladimir B. Kulikov ◽  
G. H. Avetisyan ◽  
L. M. Vasilevskaya ◽  
I. D. Zalevsky ◽  
I. V. Budkin ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Normal Incidence ◽  
Multiple Quantum ◽  
Quantum Well Structures

Normal incidence GaAs/AlGaAs multiple-quantum-well polarization modulator using an induced uniaxial strain

1993 ◽  
Vol 40 (11) ◽  
pp. 2144-2145 ◽  
Author(s):  
J. Pamulapati ◽  
H. Shen ◽  
M. Wraback ◽  
M. Taysing-Lara ◽  
M. Dutta ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Normal Incidence ◽  
Uniaxial Strain ◽  
Multiple Quantum ◽  
Polarization Modulator

Normal incidence high contrast multiple quantum well light modulator based on polarization rotation

1993 ◽  
Vol 62 (23) ◽  
pp. 2908-2910 ◽  
Author(s):  
H. Shen ◽  
M. Wraback ◽  
J. Pamulapati ◽  
M. Dutta ◽  
P. G. Newman ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Normal Incidence ◽  
Multiple Quantum ◽  
High Contrast ◽  
Polarization Rotation ◽  
Light Modulator

Characterization of Doped GexSi1−x Multiple Quantum well Structures for far- IR Detectors

1994 ◽  
Vol 299 ◽  
Author(s):  
D. W. Greve ◽  
R. Misra ◽  
R. Strong ◽  
T.E. Schlesinger
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Normal Incidence ◽  
Multiple Quantum ◽  
Free Carrier Absorption ◽  
Ir Detectors ◽  
Quantum Well Structures ◽  
X Ray ◽  
Carrier Absorption

AbstractDoped GexSi1−x/Si multiple quantum well structures have been grown by UHV/CVD and characterized by various techniques. SIMS and X- ray confirm the intended modulation of germanium and boron concentrations, and photoluminescence has been used to assess material quality. Strong free- carrier absorption has been observed at normal incidence in some samples. The results suggest that doping intermediate between 4 × 1018 cm−3 and 4 × 1019 cm−3 is necessary for useful detectors.

Normal incidence multiple quantum well light modulator with exceedingly high contrast ratio

1994 ◽  
Author(s):  
Hongen Shen ◽  
Jagadeesh Pamulapati ◽  
Michael Wraback ◽  
Monica A. Taysing-Lara ◽  
Peter G. Newman ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Contrast Ratio ◽  
Normal Incidence ◽  
Multiple Quantum ◽  
High Contrast ◽  
Light Modulator

Creation of In-Plane Anisotropic Strain in GaAs/A1xGa1−xAs Multiple Quantum Well Structures

1993 ◽  
Vol 300 ◽  
Author(s):  
Y. Lu ◽  
H.C. Kuo ◽  
H. Shen ◽  
M. Taysing-Lara ◽  
M. Wraback ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Contrast Ratio ◽  
Linear Thermal Expansion ◽  
Normal Incidence ◽  
Multiple Quantum ◽  
Polarization Rotation ◽  
Light Modulator ◽  
Quantum Well Structures ◽  
Anisotropic Strain

ABSTRACTThin film of GaAs/AlGaAs multiple quantum well (MQW) structure have been bonded to the lithium tantalate (LiTaO3) or calcium carbonate (CaCO3) substrates cut such that one of the linear thermal expansion coefficients almost matches that of the MQW while its orthogonal counterpart does not. By choosing the proper bonding and operating temperatures, in-plane anisotropic strain up to 0.3% has been achieved. The transmission spectrum shows an anisotropy in excitonic absorption which results in a polarization rotation of a light beam at normal incidence to the structure. The theoretical calculation is in agreement with the experimental results. Using the polarization rotation, we have demonstrated a novel MQW light modulator with an exceedingly high contrast ratio of 330:1.

Sign in / Sign up

Export Citation Format

Share Document