Consumer electronics: an important driver of integrated circuit technology

1994 ◽  
Vol 82 (4) ◽  
pp. 465-468 ◽  
Author(s):  
E.A. Sack
Keyword(s):  
Integrated Circuit ◽  
Consumer Electronics ◽  
Circuit Technology

Future Packaging Directions in the 1990's and their Materials Challenges

1989 ◽  
Vol 167 ◽  
Author(s):  
Dean E. Eastman
Keyword(s):  
Integrated Circuit ◽  
Consumer Electronics ◽  
Information Technology Industry ◽  
Performance Function ◽  
Silicon Technology ◽  
Technology Industry ◽  
Computer Communications ◽  
Systems Requirements ◽  
Circuit Technology ◽  
Technology Advances

AbstractIn the 1990's, silicon integrated circuit technology will continue to rapidly advance from VLSI towards ULSI. For example, 64 × 106 circuit microprocessor chips, 106 gate CMOS logic chips, and 105 circuit bipolar logic chips, and beyond, will make up the electronics systems of the 1990's. To support these silicon technology advances in density, performance, and cost reduction, packaging technology will also have to advance rapidly to meet packaged electronics systems requirements. Packaging solutions will be required for machines ranging from supercomputers and mainframes to minis and workstations, and for consumer electronics. Silicon technology advances will continue to enable the unique rates of change in performance, function, and cost per function that characterize the information technology industry, including the computer, communications, and consumer electronics industries.

Preparation of TEM samples by focused ion beams

1995 ◽  
Vol 53 ◽  
pp. 518-519
Author(s):  
John F. Walker ◽  
J C Reiner ◽  
C Solenthaler
Keyword(s):  
Integrated Circuit ◽  
Polycrystalline Silicon ◽  
Field Effect Transistor ◽  
High Spatial Resolution ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Precise Location ◽  
Effect Transistor ◽  
Circuit Technology

The high spatial resolution available from TEM can be used with great advantage in the field of microelectronics to identify problems associated with the continually shrinking geometries of integrated circuit technology. In many cases the location of the problem can be the most problematic element of sample preparation. Focused ion beams (FIB) have previously been used to prepare TEM specimens, but not including using the ion beam imaging capabilities to locate a buried feature of interest. Here we describe how a defect has been located using the ability of a FIB to both mill a section and to search for a defect whose precise location is unknown. The defect is known from electrical leakage measurements to be a break in the gate oxide of a field effect transistor. The gate is a square of polycrystalline silicon, approximately 1μm×1μm, on a silicon dioxide barrier which is about 17nm thick. The break in the oxide can occur anywhere within that square and is expected to be less than 100nm in diameter.

PERFORMANCE AT THE EDGE: GALLIUM ARSENIDE AND SILICON ICs FOR OPTICAL ELECTRONICS

1991 ◽  
Vol 02 (03) ◽  
pp. 147-162 ◽  
Author(s):  
ROBERT G. SWARTZ
Keyword(s):  
Gallium Arsenide ◽  
Optical Communication ◽  
Optical Communications ◽  
Integrated Circuit ◽  
High Performance ◽  
Compound Semiconductor ◽  
Performance Curve ◽  
Semiconductor Technology ◽  
Market Trends ◽  
Circuit Technology

Compound semiconductor technology is rapidly entering the mainstream, and is quickly finding its way into consumer applications where high performance is paramount. But silicon integrated circuit technology is evolving up the performance curve, and CMOS in particular is consuming ever more market share. Nowhere is this contest more clearly evident than in optical communications. Here applications demand performance ranging from a few hundreds of megahertz to multi-gigahertz, from circuits containing anywhere from tens to tens of thousands of devices. This paper reviews the high performance electronics found in optical communication applications from a technology standpoint, illustrating merits and market trends for these competing, yet often complementary IC technologies.

scholarly journals Design and Development of a 3dB Quadrature Patch Hybrid Coupler

2018 ◽  
Vol 7 (2.6) ◽  
pp. 217
Author(s):  
B Sekharbabu ◽  
K Narsimha Reddy ◽  
S Sreenu
Keyword(s):  
Integrated Circuit ◽  
High Frequency ◽  
Return Loss ◽  
Coupling Factor ◽  
Power Combiners ◽  
Measurement Results ◽  
Structure Simulation ◽  
Hybrid Coupler ◽  
Port Device ◽  
Circuit Technology

In this paper a -3 dB, 90-degreephase shift RF quadrature patch hybrid coupler is designed to operate at 2.4GHz. Hybrid coupler is a four-port device, that’s accustomed split a signaling with a resultant 90degrees’ section shift between output signals whereas maintaining high isolation between the output ports. The RF quadrature patch hybrid coupler is used in various radio frequency applications including mixers, power combiners, dividers, modulators and amplifiers. The desired hybrid coupler is designed using FR-4 substrate with 1.6mm height in High Frequency Structure Simulation (HFSS) and the same is fabricated and tested. The designed Hybrid coupler is examined in terms of parameters like insertion Loss, coupling factor and return Loss. The simulation and measurement results are compared. Major advantages of the RF quadrature patch hybrid couplers are that they are compatible with integrated circuit technology.

Conversion Method of Description Files in Structural Testing of Digital Circuit

2013 ◽  
Vol 427-429 ◽  
pp. 1285-1288
Author(s):  
Kang Yi Wang
Keyword(s):  
Integrated Circuit ◽  
Large Scale ◽  
Digital Circuit ◽  
Logic Circuit ◽  
Structural Testing ◽  
Digital Logic ◽  
Continuous Development ◽  
Program Correctness ◽  
Testing Program ◽  
Circuit Technology

With the continuous development of large-scale integrated circuit technology, the importance of structural testing and testability design for digital logic circuit has become increasingly evident. In the testing domain, Bench is the most commonly used formats to describe a measured circuit. In order to test the measured circuit using computer, files with various formats must be converted to a netlist file which can be identified by computer. Lev format is a common netlist file. This paper mainly discusses how to convert the Bench file into Lev file, and it is proved by testing program correctness and robustness.

Ferroelectric Thin Films in Micro-electromechanical Systems Applications

MRS Bulletin ◽  
1996 ◽  
Vol 21 (7) ◽  
pp. 59-65 ◽  
Author(s):  
D.L. Polla ◽  
L.F. Francis
Keyword(s):  
Thin Films ◽  
Integrated Circuit ◽  
Microelectromechanical Systems ◽  
Pressure Sensors ◽  
Ferroelectric Ceramic ◽  
Consumer Electronics ◽  
Ferroelectric Ceramics ◽  
Control Electronics ◽  
Commercial Applications ◽  
And Control

Ferroelectric ceramic thin films fit naturally into the burgeoning field of microelectromechanical systems (MEMS). Microelectromechanical systems combine traditional Si integrated-circuit (IC) electronics with micromechanical sensing and actuating components. The term MEMS has become synonymous with many types of microfabricated devices such as accelerometers, infrared detectors, flow meters, pumps, motors, and mechanical components. These devices have lateral dimensions in the range of 10 μm–10 mm. The ultimate goal of MEMS is a self-contained system of interrelated sensing and actuating devices together with signal processing and control electronics on a common substrate, most often Si. Since fabrication involves methods common to the IC industry, MEMS can be mass-produced. Commercial applications for MEMS already span biomedical (e.g., blood-pressure sensors), manufacturing (e.g., microflow controllers), information processing (e.g., displays), and automotive (e.g., accelerometers) industries. More applications are projected in consumer electronics, manufacturing control, communications, and aerospace. Materials for MEMS include traditional microelectronic materials (e.g., Si, SiO2, Si3N4, polyimide, Pt, Al) as well as nontraditional ones (e.g., ferroelectric ceramics, shapememory alloys, chemical-sensing materials). The superior piezoelectric and pyroelectric properties of ferroelectric ceramics make them ideal materials for microactuators and microsensors.

An n-channel Si-gate integrated circuit technology

1975 ◽  
Author(s):  
J.T. Clemens ◽  
R.H. Doklan ◽  
J.J. Nolen
Keyword(s):  
Integrated Circuit ◽  
Circuit Technology
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