Investigation on low-voltage low-power silicon bipolar design topology for high-speed digital circuits

2000 ◽  
Vol 35 (7) ◽  
pp. 1051-1054 ◽  
Author(s):  
G. Schuppener ◽  
C. Pala ◽  
M. Mokhtari
Keyword(s):  
Low Power ◽  
High Speed ◽  
Digital Circuits ◽  
Low Voltage

scholarly journals A 2.5 Gbps, 10-Lane, Low-Power, LVDS Transceiver in 28 nm CMOS Technology

Electronics ◽  
2019 ◽  
Vol 8 (3) ◽  
pp. 350 ◽  
Author(s):  
Xu Bai ◽  
Jianzhong Zhao ◽  
Shi Zuo ◽  
Yumei Zhou
Keyword(s):  
Low Power ◽  
High Speed ◽  
Low Voltage ◽  
Cmos Technology ◽  
Common Mode ◽  
Serial Interface ◽  
Common Mode Voltage ◽  
Rail To Rail ◽  
The Common ◽  
28 Nm

This paper presents a 2.5 Gbps 10-lane low-power low voltage differential signaling (LVDS) transceiver for a high-speed serial interface. In the transmitter, a complementary MOS H-bridge output driver with a common mode feedback (CMFB) circuit was used to achieve a stipulated common mode voltage over process, voltage and temperature (PVT) variations. The receiver was composed of a pre-stage common mode voltage shifter and a rail-to-rail comparator. The common mode voltage shifter with an error amplifier shifted the common mode voltage of the input signal to the required range, thereby the following rail-to-rail comparator obtained the maximum transconductance to recover the signal. The chip was fabricated using SMIC 28 nm CMOS technology, and had an area of 1.46 mm2. The measured results showed that the output swing of the transmitter was around 350 mV, with a root-mean-square (RMS) jitter of 3.65 [email protected] Gbps, and the power consumption of each lane was 16.51 mW under a 1.8 V power supply.

A New-High Speed-Low Power-Carry Select Adder Using Modified GDI Technique

2015 ◽  
Vol 4 (3) ◽  
pp. 173
Author(s):  
M. Anitha ◽  
J.Princy Joice ◽  
Rexlin Sheeba.I
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
High Speed ◽  
Digital Circuits ◽  
Lower Cost ◽  
Block Structure ◽  
Propagation Delay ◽  
Digital Systems ◽  
Novel Technique ◽  
Degradation Problem

Adders are of fundamental importance in a wide variety of digital systems. This paper presents a novel bit block structure which computes propagate signals as carry strength. Power consumption is one of the most significant parameters of carry select adder.The proposed method aims on GDI(Gate Diffusion Input) Technique. Modified GDI is a novel technique for low power digital circuits design further to reduce the swing degradation problem. This techniques allows reduction in power consumption, carry propagation delay and transistor count of the carry select adder.This technique can be used to reduce the number of transistors compared to conventional CSLA and made comparison with known conventional adders which gives that the usage of carry-strength signals allows high-speed adders to be realised at lower cost as well as consuming lower power than previous designs. Hence, this paper we are concentrating on the area level &we are reducing the power using modified GDI logic.

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