scholarly journals An engineering model for short-channel MOS devices

10.1109/4.346 ◽  
1988 ◽  
Vol 23 (4) ◽  
pp. 950-958 ◽  
Author(s):  
K.-y. Toh ◽  
P.-K. Ko ◽  
R.G. Meyer
Keyword(s):  
Engineering Model ◽  
Short Channel ◽  
Mos Devices

scholarly journals Design of Low Power Less Leakage Quarternary Adder Using CMOS

2021 ◽  
pp. 110-121
Author(s):  
M. Sutha ◽  
Dr. R. Nirmala ◽  
Dr. E. Kamalavathi
Keyword(s):  
Low Power ◽  
Impact Ionization ◽  
Vlsi Design ◽  
Cmos Technology ◽  
Surface Scattering ◽  
Short Channel Effects ◽  
Short Channel ◽  
Mos Devices ◽  
Channel Effects ◽  
Quaternary Adder

In VLSI, design and implementation of circuits with MOS devices and binary logic are quite usual. The Main Objective is to design a low power and minimum leakage Quaternary adder. The VLSI field consists of Multi-valued logic (MVL) such as ternary and Quaternary Logic (QTL). The Failures such as Short Channel Effects (SCE) Impact-ionization and surface scattering are in normalized aspects. The Quaternary radix on MVL (multi-valued logic) monitors and reduces the area. The Quaternary (four-valued) logic converts the quaternary signals and binary signals produced by the by the existing binary circuits. The Proposed is carried out with LTSPICE tool and CMOS technology.

A New Approximate Model for Short-Channel MOS Devices

1998 ◽  
Vol 165 (2) ◽  
pp. 445-454
Author(s):  
R. Sasić ◽  
R. Ramović ◽  
V. Herrmann
Keyword(s):  
Approximate Model ◽  
Short Channel ◽  
Mos Devices

Optimization of breakdown behaviour and short channel effects in MBE-grown vertical MOS-devices with local channel doping

2000 ◽  
Vol 369 (1-2) ◽  
pp. 383-386 ◽  
Author(s):  
C Fink ◽  
K.G Anil ◽  
H Geiger ◽  
W Hansch ◽  
J Schulze ◽  
...  
Keyword(s):  
Short Channel Effects ◽  
Short Channel ◽  
Mos Devices ◽  
Channel Effects

scholarly journals New Method for Determination of Drain Saturation Voltage in Short Channel MOS Devices Between Liquid Helium to Room Temperature

2001 ◽  
Vol 24 (2) ◽  
pp. 129-134
Author(s):  
Y. Amhouche ◽  
A. El Abbassi ◽  
K. Raïs ◽  
E. Bendada ◽  
R. Rmaily
Keyword(s):  
Room Temperature ◽  
Impact Ionization ◽  
Ionization Rate ◽  
Channel Length ◽  
New Method ◽  
Short Channel ◽  
Mos Devices ◽  
Impact Ionization Rate ◽  
The Impact

A new method for drain saturation voltage extraction in submicron MOSFETs is presented. It is based on measurements of the partial derivative of the impact ionization rate. The method has been tested using main of channel length MOSFET devices and compared with others methods.

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