High thermal conductivity aluminum nitride ceramic substrates and packages

1990 ◽  
Vol 13 (2) ◽  
pp. 313-319 ◽  
Author(s):  
F. Miyashiro ◽  
N. Iwase ◽  
A. Tsuge ◽  
F. Ueno ◽  
M. Nakahashi ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Aluminum Nitride ◽  
High Thermal Conductivity ◽  
Ceramic Substrates

scholarly journals Silver Nanoparticle-Deposited Aluminum Oxide Nanoparticle as Fillers for Epoxy Composites with High Thermal Conductivity

2018 ◽  
Vol 27 (6) ◽  
pp. 096369351802700
Author(s):  
Tao Huang ◽  
Yimin Yao ◽  
Gang Zhang ◽  
Fanling Meng
Keyword(s):  
Thermal Conductivity ◽  
Aluminum Nitride ◽  
Silver Nanoparticle ◽  
Ag Nanoparticles ◽  
Thermal Contact Resistance ◽  
Epoxy Composite ◽  
Thermal Contact ◽  
High Thermal Conductivity ◽  
Epoxy Composites ◽  
Oxide Nanoparticle

With the development of polymer-filled composites, the demand of high thermal conductivity materials is much attractive than ever. However, the process of a common method to improve thermal conductivity of composites is considerably complicated. The aim of this study is to investigate thermal conductivity of epoxy filled silver nanoparticle deposited aluminum nitride nanoparticles with relatively convenient process. We found that the thermal conductivities of composites filled with AlN/Ag nanoparticles are effectively enhanced, which is enormously increased from 0.48 Wm-1K-1(1.88 vol%) to 3.66 Wm-1K-1 (19.54 vol%). This can be ascribed to the bridging connections of silver nanoparticle among aluminum nitride nanoparticles. In addition, the thermal contact resistance of the epoxy composites filler with AlN/Ag nanoparticles is decreased, which is proved by the fitting measured thermal conductivity of epoxy composite with one physical model. We believe the finding has great potential for any microelectronic application.

Metallization Behavior in Aluminum Nitride Electronic Packages

1990 ◽  
Vol 203 ◽  
Author(s):  
Ellice Y. Luh ◽  
Leonard E. Dolhert ◽  
Jack H. Enloe ◽  
John W. Lau
Keyword(s):  
Thermal Conductivity ◽  
Dielectric Properties ◽  
Aluminum Nitride ◽  
High Density ◽  
High Thermal Conductivity ◽  
Electronic Packages ◽  
Oxide Ceramics ◽  
Chemical Behavior ◽  
Hermetic Seal ◽  
Silicon Based

ABSTRACTCharacteristics such as CTE close to that of silicon, high thermal conductivity, and good dielectric properties make aluminum nitride (AIN) an excellent dielectric for packaging silicon-based high density multichip interconnects. However, there remains many aspects of its behavior that have not been characterized. One such example is the behavior of the various metallizations used within a package. As with A12O3, these metallizations must contribute toward a hermetic seal separating the die from the environment. However, the chemical behavior of the metallization systems used for A12O3 may not be compatible with non-oxide ceramics such as AIN. Consequently, these chemical interactions are investigated in view of the requirements for each application within electronic packages. Hermeticity testing results are also included in the discussion.

Separation of Internal Strains and Lattice Distortion Caused by Oxygen Impurities in Aluminum Nitride Hot-Pressed Ceramics

1994 ◽  
Vol 38 ◽  
pp. 479-487 ◽  
Author(s):  
O. N. Grigoriev ◽  
S. M. Kushnerenko ◽  
K. A. Plotnikov ◽  
W. Kreher
Keyword(s):  
Thermal Conductivity ◽  
Aluminum Nitride ◽  
Integrated Circuit ◽  
Room Temperature ◽  
Lattice Distortion ◽  
High Thermal Conductivity ◽  
Hybrid Integrated Circuit ◽  
Oxygen Contamination ◽  
Internal Strains ◽  
Oxygen Impurities

Recently aluminum nitride (A1N) has been intensively studied as a promising material for production of hybrid integrated circuit substrates because of its high thermal conductivity, high fjexural strength, and nontoxic nature. The estimated theoretical value of its thermal conductivity at room temperature is 320 W/mK, but it is strongly degraded by the introduction of oxygen. The measured values vary from 30 to 260 W/mK, Therefore, in production of this material the reduction of oxygen contamination is of paramount importance.

Combustion Synthesis of Aluminum Nitride: A Review

2012 ◽  
Vol 521 ◽  
pp. 101-111 ◽  
Author(s):  
Shyan Lung Chung ◽  
Chun Hung Lai
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Aluminum Nitride ◽  
Combustion Synthesis ◽  
High Thermal Conductivity ◽  
Synthesis Methods ◽  
Unique Combination ◽  
Product Yields ◽  
High Electrical Resistivity ◽  
Industrial Material

Aluminum nitride has been acknowledged as an important industrial material because of its unique combination of high thermal conductivity and high electrical resistivity. Although there have been several excellent reviews on the synthesis of aluminum nitride, little has been mentioned on the combustion synthesis of AlN. In this work, the combustion synthesis methods for synthesis of AlN are reviewed and classified according to the phases involved in the reaction, the types of reactants (and additives) used and the design principles for the synthesis processes. Problems critical to combustion synthesis of AlN to obtain products with high product yields and low impurity contents are summarized and discussed.

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