Design and fabrication of low-threshold 1.55-μm graded-index separate-confinement heterostructure strained InGaAsP single-quantum-well laser diodes

1997 ◽  
Vol 33 (7) ◽  
pp. 1141-1148 ◽  
Author(s):  
N. Yamamoto ◽  
K. Yokoyama ◽  
T. Yamanaka ◽  
M. Yamamoto
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Graded Index ◽  
Quantum Well Laser ◽  
Low Threshold

Low‐threshold (≤ 92 A/cm2) 1.6 μm strained‐layer single quantum well laser diodes optically pumped by a 0.8 μm laser diode

1990 ◽  
Vol 57 (16) ◽  
pp. 1608-1609 ◽  
Author(s):  
C. E. Zah ◽  
R. Bhat ◽  
K. W. Cheung ◽  
N. C. Andreadakis ◽  
F. J. Favire ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Laser Diodes ◽  
Single Quantum ◽  
Optically Pumped ◽  
Single Quantum Well ◽  
Strained Layer ◽  
Quantum Well Laser ◽  
Low Threshold

AlGaInP single quantum well laser diodes

1995 ◽  
Author(s):  
David P. Bour ◽  
David W. Treat ◽  
K. J. Beernink ◽  
Ross D. Bringans
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Laser

Carrier heating in AlGaAs single quantum well laser diodes

1991 ◽  
Vol 59 (22) ◽  
pp. 2775-2777 ◽  
Author(s):  
Morris P. Kesler ◽  
Christoph S. Harder ◽  
Eberhard E. Latta
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Carrier Heating ◽  
Quantum Well Laser
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