Low threshold current grating‐coupled surface‐emitting strained‐InGaAs single quantum well laser with GaAs optical confinement structure

1992 ◽  
Vol 60 (3) ◽  
pp. 265-267 ◽  
Author(s):  
Shinichi Takigawa ◽  
Ken Bacher ◽  
Lewis B. Aronson ◽  
James S. Harris
Keyword(s):  
Quantum Well ◽  
Threshold Current ◽  
Single Quantum ◽  
Optical Confinement ◽  
Single Quantum Well ◽  
Quantum Well Laser ◽  
Low Threshold

Extremely low threshold current density InGaAs/GaAs/AIGaAs strained SQW laser grown by MBE with As2

1996 ◽  
Vol 74 (S1) ◽  
pp. 1-4 ◽  
Author(s):  
M. Dion ◽  
Z. R. Wasilewski ◽  
F. Chatenoud ◽  
V. K. Gupta ◽  
A. R. Pratt ◽  
...  
Keyword(s):  
Quantum Well ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Single Quantum Well ◽  
Graded Index ◽  
Quantum Well Laser ◽  
Gaas Barrier ◽  
Low Threshold ◽  
Cladding Layers

In this report, we present data on an InGaAs/GaAs strained single quantum well laser with the lowest reported threshold current density to date, namely 44 A cm−2 for a 3 mm cavity length. This was grown by solid-source molecular-beam epitaxy with the arsenic dimer, As2. The structure is that of a graded-index, separate-confinement heterostructure with a single strained InGaAs quantum well, sandwiched between GaAs barrier layers and AlGaAs cladding layers. The wavelength of the lasers was around 985 nm, and the internal efficiency and losses were 69% and 0.70 cm−1, respectively. In addition, data on the uniformity of our lasers, which are grown on rotating 2 in substrates (1 in = 2.54 cm), show drops in photoluminescence emission wavelength and layer thickness of less than 4 nm and 4%, respectively, from the centre to the edge of the wafer and very little compositional change.

Very low threshold current AlGaInp/GaxIn1−xP strained single quantum well visible laser diode

1990 ◽  
Vol 26 (17) ◽  
pp. 1375 ◽  
Author(s):  
T. Katsuyama ◽  
I. Yoshida ◽  
J. Shinkai ◽  
J. Hashimoto ◽  
H. Hayashi
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Threshold Current ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Visible Laser ◽  
Low Threshold

Low‐threshold (≤ 92 A/cm2) 1.6 μm strained‐layer single quantum well laser diodes optically pumped by a 0.8 μm laser diode

1990 ◽  
Vol 57 (16) ◽  
pp. 1608-1609 ◽  
Author(s):  
C. E. Zah ◽  
R. Bhat ◽  
K. W. Cheung ◽  
N. C. Andreadakis ◽  
F. J. Favire ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Laser Diodes ◽  
Single Quantum ◽  
Optically Pumped ◽  
Single Quantum Well ◽  
Strained Layer ◽  
Quantum Well Laser ◽  
Low Threshold
Sign in / Sign up

Export Citation Format

Share Document