Barrier composition dependence of differential gain and external differential quantum efficiency in 1.3-μm strained-layer multiquantum-well lasers

1996 ◽  
Vol 32 (1) ◽  
pp. 38-42 ◽  
Author(s):  
M. Kito ◽  
N. Otsuka ◽  
M. Ishino ◽  
Y. Matsui
Keyword(s):  
Quantum Efficiency ◽  
Composition Dependence ◽  
Strained Layer ◽  
Differential Gain ◽  
Multiquantum Well

scholarly journals InAs/InAsSb Strained-Layer Superlattice Mid-Wavelength Infrared Detector for High-Temperature Operation

Micromachines ◽  
2019 ◽  
Vol 10 (12) ◽  
pp. 806 ◽  
Author(s):  
Gamini Ariyawansa ◽  
Joshua Duran ◽  
Charles Reyner ◽  
John Scheihing
Keyword(s):  
High Temperature ◽  
Quantum Efficiency ◽  
Focal Plane ◽  
Infrared Detector ◽  
Focal Plane Array ◽  
Integration Time ◽  
Strained Layer ◽  
Detector Structure ◽  
Strained Layer Superlattice ◽  
High Temperature Operation

This paper reports an InAs/InAsSb strained-layer superlattice (SLS) mid-wavelength infrared detector and a focal plane array particularly suited for high-temperature operation. Utilizing the nBn architecture, the detector structure was grown by molecular beam epitaxy and consists of a 5.5 µm thick n-type SLS as the infrared-absorbing element. Through detailed characterization, it was found that the detector exhibits a cut-off wavelength of 5.5 um, a peak external quantum efficiency (without anti-reflection coating) of 56%, and a dark current of 3.4 × 10−4 A/cm2, which is a factor of 9 times Rule 07, at 160 K temperature. It was also found that the quantum efficiency increases with temperature and reaches ~56% at 140 K, which is probably due to the diffusion length being shorter than the absorber thickness at temperatures below 140 K. A 320 × 256 focal plane array was also fabricated and tested, revealing noise equivalent temperature difference of ~10 mK at 80 K with f/2.3 optics and 3 ms integration time. The overall performance indicates that these SLS detectors have the potential to reach the performance comparable to InSb detectors at temperatures higher than 80 K, enabling high-temperature operation.

10 Gbit/s low chirp performance of strained layer multiquantum well DFB laser

1991 ◽  
Vol 27 (3) ◽  
pp. 241 ◽  
Author(s):  
Y. Hirayama ◽  
M. Morinaga ◽  
M. Tanimura ◽  
M. Onomura ◽  
M. Funemizu ◽  
...  
Keyword(s):  
Strained Layer ◽  
Dfb Laser ◽  
Multiquantum Well

Narrow-linewidth strained-layer 1.5 μm multiquantum well distributed feedback lasers

1991 ◽  
Vol 27 (8) ◽  
pp. 645
Author(s):  
S.J. Wang ◽  
Y. Twu ◽  
T. Tanbun-Ek ◽  
R.A. Logan ◽  
N.K. Dutta ◽  
...  
Keyword(s):  
Distributed Feedback ◽  
Distributed Feedback Lasers ◽  
Narrow Linewidth ◽  
Strained Layer ◽  
Multiquantum Well
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