Second- and third-order harmonic distortion in DFB lasers

1995 ◽  
Vol 31 (11) ◽  
pp. 1974-1980 ◽  
Author(s):  
Liming Zhang ◽  
D.A. Ackerman
Keyword(s):  
Harmonic Distortion ◽  
Third Order

scholarly journals Design and Analysis of a Repetitive Current Controller for a Single-Phase Bridgeless SEPIC PFC Converter

Energies ◽  
2018 ◽  
Vol 12 (1) ◽  
pp. 131 ◽  
Author(s):  
Jinwoo Kim ◽  
Sanghun Han ◽  
Wontae Cho ◽  
Younghoon Cho ◽  
Hyunsoo Koh
Keyword(s):  
Controller Design ◽  
Harmonic Distortion ◽  
Input Current ◽  
Order Model ◽  
Third Order ◽  
Current Controller ◽  
The Stability ◽  
Small Signal Modeling ◽  
Fifth Order ◽  
Repetitive Controller

This paper studies a repetitive controller design scheme for a bridgeless single-ended primary inductor converter (SEPIC) power factor correction (PFC) converter to mitigate input current distortions. A small signal modeling of the converter is performed by a fifth-order model. Since the fifth-order model is complex to be applied in designing a current controller, the model is approximated to a third-order model. Using the third-order model, the repetitive controller is designed to reduce the input current distortion. Then, the stability of the repetitive controller is verified with an error transfer function. The proposed controller performance is validated by simulation, and the experiment results show that the input current total harmonic distortion (THD) is improved by applying the proposed controller for an 800 W bridgeless SEPIC PFC converter prototype.

scholarly journals Modeling of Millimeter-Wave Modulation Characteristics of Semiconductor Lasers under Strong Optical Feedback

2014 ◽  
Vol 2014 ◽  
pp. 1-9
Author(s):  
Ahmed Bakry
Keyword(s):  
Semiconductor Lasers ◽  
Continuous Wave ◽  
Dynamic Range ◽  
Optical Feedback ◽  
Harmonic Distortion ◽  
Wave Band ◽  
Third Order ◽  
Signal Characteristics ◽  
Simulated Time ◽  
Photon Resonance

This paper presents modeling and simulation on the characteristics of semiconductor laser modulated within a strong optical feedback (OFB-)induced photon-photon resonance over a passband of millimeter (mm) frequencies. Continuous wave (CW) operation of the laser under strong OFB is required to achieve the photon-photon resonance in the mm-wave band. The simulated time-domain characteristics of modulation include the waveforms of the intensity and frequency chirp as well as the associated distortions of the modulated mm-wave signal. The frequency domain characteristics include the intensity modulation (IM) and frequency modulation (FM) responses in addition to the associated relative intensity noise (RIN). The signal characteristics under modulations with both single and two mm-frequencies are considered. The harmonic distortion and the third order intermodulation distortion (IMD3) are examined and the spurious free dynamic range (SFDR) is calculated.

scholarly journals The Roles of the Gate Bias, Doping Concentration, Temperature and Geometry on the Harmonic Distortion of Junctionless Nanowire Transistors Operating in the Linear Regime

2014 ◽  
Vol 9 (2) ◽  
pp. 110-117
Author(s):  
Rodrigo T. Doria ◽  
Renan D. Trevisoli ◽  
Michelly De Souza ◽  
Magali Estrada ◽  
Antonio Cerdeira ◽  
...  
Keyword(s):  
Experimental Data ◽  
Doping Concentration ◽  
Series Resistance ◽  
Harmonic Distortion ◽  
Physical Parameters ◽  
Gate Bias ◽  
Linear Regime ◽  
Third Order ◽  
Nanowire Transistors ◽  
The Third

The linearity of Junctionless nanowire transistors operating in the linear regime has been evaluated through experimental data and numerical simulations. The influences of the fin width, the gate bias, the temperature, the doping concentration and the geometry on the overall linearity have been evaluated. The increase of the series resistance associated both to the variation of the physical parameters and the incomplete ionization effect has shown to improve the second order distortion and degrade the third order one.

scholarly journals Performance and Analysis of n-Type Vertically Stacked Nanowires Regarding Harmonic Distortion

2020 ◽  
Vol 15 (2) ◽  
pp. 1-5
Author(s):  
Cesar Augusto Belchior Carvalho ◽  
Genaro Mariniello da Silva ◽  
Bruna Cardoso Paz ◽  
Sylvain Barraud ◽  
Maud Vinet ◽  
...  
Keyword(s):  
Harmonic Distortion ◽  
Total Harmonic Distortion ◽  
Third Order ◽  
Figures Of Merit ◽  
Channel Lengths ◽  
Harmonic Distortions

This paper studies the harmonic distortion (or non-linearity) of vertically stacked SOI nanosheets with different fin widths and channel lengths. The total harmonic distortion and third order harmonic distortion are used as figures of merit in this work. The four approaches applied verifies the correlation between the harmonic distortions and the variety of transistor’s dimensions available for analysis.

A FULLY DIFFERENTIAL THIRD-ORDER VHF Gm–C FILTER BASED ON LINEAR TRANSFORMATION TECHNIQUES

2007 ◽  
Vol 16 (02) ◽  
pp. 221-231 ◽  
Author(s):  
YUH-SHYAN HWANG ◽  
JIANN-JONG CHEN ◽  
JEN-HUNG LAI
Keyword(s):  
Linear Transformation ◽  
Power Dissipation ◽  
Supply Voltage ◽  
Design Method ◽  
Cutoff Frequency ◽  
Harmonic Distortion ◽  
Very High Frequency ◽  
Third Order ◽  
Fully Differential ◽  
Very High

A fully differential third-order very high frequency (VHF) Gm–C filter based on linear transformation (LT) techniques is presented in this paper. The systematic design method and the procedure are developed to realize LT Gm–C filters efficiently. A third-order Butterworth lowpass filter embedded bandgap and bias circuits with 200 MHz cutoff frequency is implemented in the TSMC 0.18 μm 1P6M process. The total harmonic distortion (THD) of the proposed filter is - 43 dB with input signal 0.5 V p-p and output loading capacitance 1 pF at 200 MHz. Power dissipation is 9.77 mW under 1.8 V supply voltage. Its core area occupies 0.188 × 0.1862. Post simulation and experimental results that confirm the theoretical analysis are obtained. Furthermore, the proposed circuits can be extended to high-order Chebychev and elliptic filters.

scholarly journals Third-Order Sliding Mode Applied to the Direct Field-Oriented Control of the Asynchronous Generator for Variable-Speed Contra-Rotating Wind Turbine Generation Systems

Energies ◽  
2021 ◽  
Vol 14 (18) ◽  
pp. 5877
Author(s):  
Habib Benbouhenni ◽  
Nicu Bizon
Keyword(s):  
Sliding Mode ◽  
Harmonic Distortion ◽  
Active Power ◽  
Field Oriented Control ◽  
Variable Speed ◽  
Third Order ◽  
Stator Current ◽  
Pi Controllers ◽  
Asynchronous Generator ◽  
And Performance

Traditional direct field-oriented control (DFOC) techniques with integral-proportional (PI) controllers have undesirable effects on the power quality and performance of variable speed contra-rotating wind power (CRWP) plants based on asynchronous generators (ASGs). In this work, a commanding technique based on the DFOC technique for ASG is presented on variable speed conditions to minimize the output power ripples and the total harmonic distortion (THD) of the grid current. A new DFOC strategy was designed based on third-order sliding mode (TOSM) control to minimize oscillations and the THD value of the current and active power of the ASG; the designed technique decreases the current THD from ASG and does not impose any additional undulations in different parts of ASG. The designed technique is simply implemented on traditional DFOC techniques in variable speed DRWP systems to ameliorate its effectiveness. Also, the results show that by using the designed TOSM controllers, in addition to regulating the active and reactive powers of the ASG-based variable speed CRWP system, the THD current and active power undulations of the traditional inverters can be minimized simultaneously, and the stator current became more like a sinusoidal form.

scholarly journals New Realization of Quadrature Oscillator using OTRA

2017 ◽  
Vol 7 (4) ◽  
pp. 1815 ◽  
Author(s):  
Gurumurthy Komanaplli ◽  
Neeta Pandey ◽  
Rajeshwari Pandey
Keyword(s):  
High Frequency ◽  
Closed Loop ◽  
Harmonic Distortion ◽  
Cmos Process ◽  
Third Order ◽  
Pass Filter ◽  
Fully Integrated ◽  
Quadrature Oscillator ◽  
Electronically Tunable ◽  
High Pass

In this paper a new, operational transresistance amplifier (OTRA) based, third order quadrature oscillator (QO) is presented. The proposed structure forms a closed loop using a high pass filter and differentiator. All the resistors employed in the circuit can be implemented using matched transistors operating in linear region thereby making the proposed structure fully integrated and electronically tunable. The effect of non-idealities of OTRA has been analyzed which suggests that for high frequency applications self-compensation can be used. Workability of the proposed QO is verified through SPICE simulations using 0.18μm AGILENT CMOS process parameters. Total harmonic distortion (THD) for the proposed QO is found to be less than 2.5%.The sensitivity, phasenoise analysis is also discussed for the proposed structure.

scholarly journals OTRA Based Voltage Mode Third Order Quadrature Oscillator

2014 ◽  
Vol 2014 ◽  
pp. 1-5 ◽  
Author(s):  
Rajeshwari Pandey ◽  
Neeta Pandey ◽  
Gurumurthy Komanapalli ◽  
Rashika Anurag
Keyword(s):  
Process Parameters ◽  
High Frequency ◽  
Oscillation Frequency ◽  
Harmonic Distortion ◽  
Cmos Process ◽  
Third Order ◽  
Linear Region ◽  
Fully Integrated ◽  
Electronic Tuning ◽  
Quadrature Oscillators

Two topologies of operational transresistance (OTRA) based third order quadrature oscillators (QO) are proposed in this paper. The proposed oscillators are designed using a combination of lossy and lossless integrators. The proposed topologies can be made fully integrated by implementing the resistors using matched transistors operating in linear region, which also facilitates electronic tuning of oscillation frequency. The nonideality analysis of the circuit is also given and for high frequency applications self-compensation can be used. Workability of the proposed QOs is verified through PSPICE simulations using 0.5 μm AGILENT CMOS process parameters. The total harmonic distortion (THD) for both the QO designs is found to be less than 1%.

scholarly journals Analog Operation Temperature Dependence of nMOS Junctionless Transistors Focusing on Harmonic Distortion

2011 ◽  
Vol 6 (2) ◽  
pp. 114-121
Author(s):  
Rodrigo T. Doria ◽  
Marcelo Antonio Pavanello ◽  
Renan D. Trevisoli ◽  
Michelly De Souza ◽  
Chi-Woo Lee ◽  
...  
Keyword(s):  
Harmonic Distortion ◽  
Drain Current ◽  
Voltage Gain ◽  
Third Order ◽  
Inversion Mode ◽  
Nanowire Transistors ◽  
Operation Temperature ◽  
Analog Performance ◽  
Junctionless Transistors ◽  
Fixed Input

This paper performs a comparative study of the analog performance of Junctionless Nanowire Transistors (JNTs) and classical Trigate inversion mode (IM) devices focusing on the harmonic distortion. The study has been carried out in the temperature range of 223 K up to 473 K. The non-linearity or harmonic distortion (HD) has been evaluated in terms of the total and the third order distortions (THD and HD3, respectively) at a fixed input bias and at a targeted output swing. Several parameters important for the HD evaluation have also been observed such as the transconductance to the drain current ratio (gm/IDS), the Early voltage (VEA) and the intrinsic voltage gain (AV). Trigate devices showed maximum AV around room temperature whereas in JNTs the intrinsic voltage gain increases with the temperature. Due to the different AV characteristics, Junctionless transistors present improved HD at higher temperatures whereas inversion mode Trigate devices show better HD properties at room temperature.When both devices are compared, Junctionless transistors present better THD and HD3 with respect to the IM Trigate devices.

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