Carrier transport effects in long-wavelength multiquantum-well lasers under large-signal modulation

1994 ◽  
Vol 30 (6) ◽  
pp. 1355-1357 ◽  
Author(s):  
K.A. Williams ◽  
P.S. Griffin ◽  
I.H. White ◽  
B. Garrett ◽  
J.E.A. Whiteaway ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Signal Modulation ◽  
Large Signal ◽  
Long Wavelength ◽  
Transport Effects ◽  
Multiquantum Well

Long wavelength high-speed semiconductor lasers with carrier transport effects

1992 ◽  
Vol 28 (10) ◽  
pp. 2230-2241 ◽  
Author(s):  
M. Ishikawa ◽  
R. Nagarajan ◽  
T. Fukushima ◽  
J.G. Wasserbauer ◽  
J.E. Bowers
Keyword(s):  
Semiconductor Lasers ◽  
High Speed ◽  
Carrier Transport ◽  
Long Wavelength ◽  
Transport Effects

Thermally activated current–voltage asymmetry in quantum-well inter-subband photodetectors

1996 ◽  
Vol 74 (S1) ◽  
pp. 9-15 ◽  
Author(s):  
P. V. Kolev ◽  
M. J. Deen ◽  
H. C. Liu ◽  
Jianmeng Li ◽  
M. Buchanan ◽  
...  
Keyword(s):  
Quantum Well ◽  
Carrier Transport ◽  
Transport Phenomena ◽  
Infrared Region ◽  
Avalanche Photodetectors ◽  
Long Wavelength ◽  
Hot Carrier ◽  
Thermally Activated ◽  
Current Voltage ◽  
Long Wavelength Infrared

Continuing research interest in quantum-well inter-subband-based devices can be associated with its prospects for numerous optoelectronic applications in the long wavelength infrared region. This paper presents experimentally measured field dependence of the thermally activated effective-barrier lowering in quantum-well inter-subband photodetectors (QWIPs). This barrier lowering is considered to be the main cause of the commonly observed asymmetry in the current–voltage characteristics of QWIPs. The research results presented here are important for understanding the factors determining the dark-current mechanisms that are crucial for further improvement in the characteristics of these devices. The study of current-carrier transport phenomena in a quantum well is also of interest for developing quantum-well lasers and avalanche photodetectors based on intraband processes, and also transistors based on ballistic or hot carrier transport phenomena.

scholarly journals Achieving beyond-100-GHz large-signal modulation bandwidth in hybrid silicon photonics Mach Zehnder modulators using thin film lithium niobate

APL Photonics ◽  
2019 ◽  
Vol 4 (9) ◽  
pp. 096101 ◽  
Author(s):  
Xiaoxi Wang ◽  
Peter O. Weigel ◽  
Jie Zhao ◽  
Michael Ruesing ◽  
Shayan Mookherjea
Keyword(s):  
Thin Film ◽  
Lithium Niobate ◽  
Silicon Photonics ◽  
Modulation Bandwidth ◽  
Signal Modulation ◽  
Large Signal ◽  
Hybrid Silicon
Sign in / Sign up

Export Citation Format

Share Document