Degradation behavior of 0.98-μm strained quantum well InGaAs/AlGaAs lasers under high-power operation

1994 ◽  
Vol 30 (2) ◽  
pp. 471-476 ◽  
Author(s):  
M. Fukuda ◽  
M. Okayasu ◽  
J. Temmyo ◽  
J. Nakand
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Degradation Behavior ◽  
High Power Operation ◽  
Power Operation ◽  
Strained Quantum Well

High‐power operation in InGaAs separate confinement heterostructure quantum well laser diodes

1988 ◽  
Vol 53 (1) ◽  
pp. 1-3 ◽  
Author(s):  
M. Kitamura ◽  
S. Takano ◽  
T. Sasaki ◽  
H. Yamada ◽  
I. Mito
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Laser Diodes ◽  
Quantum Well Laser ◽  
High Power Operation ◽  
Power Operation

Super-high-power operation of 0.98-μm InGaAs(P)/InGaP/GaAs-broadened waveguide separate confinement heterostructure quantum well diode lasers

1999 ◽  
Author(s):  
Dmitri Z. Garbuzov ◽  
Mikhail A. Maiorov ◽  
V. Khalfin ◽  
Maria G. Harvey ◽  
A. Al-Muhanna ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Diode Lasers ◽  
High Power Operation ◽  
Power Operation

Coherent high-power operation of InGaAsP/InGaAs multiple-quantum-well active-grating surface-emitting amplified lasers

1993 ◽  
Author(s):  
Nils W. Carlson ◽  
So K. Liew ◽  
Raymond J. Menna ◽  
Peter D. Gardner ◽  
James T. Andrews ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
High Power Operation ◽  
Power Operation
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