High power operation of GaAs and AlGaAs single quantum well broad-area laser diodes for Nd: YAG laser pumping

2005 ◽  
Author(s):  
K. Shigihara ◽  
A. Shima ◽  
Y. Nagai ◽  
A. Takami ◽  
S. Karakida ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Laser Diodes ◽  
Single Quantum ◽  
Broad Area ◽  
Single Quantum Well ◽  
Yag Laser ◽  
Laser Pumping ◽  
High Power Operation ◽  
Power Operation

High-power operation of broad-area laser diodes with GaAs and AlGaAs single quantum wells for Nd:YAG laser pumping

1991 ◽  
Vol 27 (6) ◽  
pp. 1537-1543 ◽  
Author(s):  
K. Shigihara ◽  
Y. Nagai ◽  
S. Karakida ◽  
A. Takami ◽  
Y. Kokubo ◽  
...  
Keyword(s):  
Quantum Wells ◽  
High Power ◽  
Nd:Yag Laser ◽  
Laser Diodes ◽  
Single Quantum ◽  
Broad Area ◽  
Laser Pumping ◽  
High Power Operation ◽  
Power Operation

High-power operation of AlGaAs SQW-SCH broad-area laser diodes for Nd:YAG solid-state laser pumping

1991 ◽  
Vol 3 (2) ◽  
pp. 97-99 ◽  
Author(s):  
Y. Nagai ◽  
K. Shigihara ◽  
A. Takami ◽  
S. Karakida ◽  
Y. Kokubo ◽  
...  
Keyword(s):  
Solid State ◽  
High Power ◽  
Laser Diodes ◽  
Solid State Laser ◽  
Broad Area ◽  
State Laser ◽  
Laser Pumping ◽  
High Power Operation ◽  
Power Operation

High‐power operation of buried‐heterostructure strained‐layer InGaAs/GaAs single quantum well lasers

1990 ◽  
Vol 57 (26) ◽  
pp. 2762-2763 ◽  
Author(s):  
T. R. Chen ◽  
L. E. Eng ◽  
Y. H. Zhuang ◽  
Y. J. Xu ◽  
H. Zaren ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Strained Layer ◽  
Buried Heterostructure ◽  
High Power Operation ◽  
Power Operation

High‐power operation of strained InGaAs/AlGaAs single quantum well lasers

1991 ◽  
Vol 59 (21) ◽  
pp. 2642-2644 ◽  
Author(s):  
A. Moser ◽  
A. Oosenbrug ◽  
E. E. Latta ◽  
Th. Forster ◽  
M. Gasser
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
High Power Operation ◽  
Power Operation

scholarly journals Tomographic Characterization of Dislocations in Failure Regions of Broad Area InGaAs/AlGaAs Strained Layer Single Quantum Well High Power Laser Diodes

2009 ◽  
Vol 15 (S2) ◽  
pp. 598-599
Author(s):  
B Foran ◽  
N Ives ◽  
T Yeoh ◽  
M Brodie ◽  
Y Sin ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Laser Diodes ◽  
Single Quantum ◽  
High Power Laser ◽  
Power Laser ◽  
Broad Area ◽  
Single Quantum Well ◽  
Strained Layer

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009

High‐power operation in InGaAs separate confinement heterostructure quantum well laser diodes

1988 ◽  
Vol 53 (1) ◽  
pp. 1-3 ◽  
Author(s):  
M. Kitamura ◽  
S. Takano ◽  
T. Sasaki ◽  
H. Yamada ◽  
I. Mito
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Laser Diodes ◽  
Quantum Well Laser ◽  
High Power Operation ◽  
Power Operation
Sign in / Sign up

Export Citation Format

Share Document