Reduction of noise figure in semiconductor laser amplifiers with Ga/sub 1-x/In/sub x/As/GaInAsP/InP strained quantum well structures

Yidong Huang; K. Komori; S. Arai

doi:10.1109/3.259411

Reduction of noise figure in semiconductor laser amplifiers with Ga/sub 1-x/In/sub x/As/GaInAsP/InP strained quantum well structures

IEEE Journal of Quantum Electronics ◽

10.1109/3.259411 ◽

1993 ◽

Vol 29 (12) ◽

pp. 2950-2956 ◽

Cited By ~ 6

Author(s):

Yidong Huang ◽

K. Komori ◽

S. Arai

Keyword(s):

Quantum Well ◽

Semiconductor Laser ◽

Noise Figure ◽

Quantum Well Structures ◽

Laser Amplifiers ◽

Strained Quantum Well ◽

Semiconductor Laser Amplifiers

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Saturation Characteristics of Ga1-xInxAs/GaInAsP/InP Tensile-Strained Quantum-Well Semiconductor Laser Amplifiers with Tapered Waveguide Structures

Optical Amplifiers and Their Applications ◽

10.1364/oaa.1993.tuc2 ◽

1993 ◽

Cited By ~ 1

Author(s):

Yidong HUANG ◽

Kazuhiro KOMORI ◽

Koji KUDO ◽

Syamsul El YUMIN ◽

Shigehisa ARAI

Keyword(s):

Quantum Well ◽

Semiconductor Laser ◽

Laser Amplifiers ◽

Tapered Waveguide ◽

Strained Quantum Well ◽

Semiconductor Laser Amplifiers

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Frequency conversion in travelling wave semiconductor laser amplifiers with bulk and quantum well structures

IEE Proceedings - Optoelectronics ◽

10.1049/ip-opt:19960080 ◽

1996 ◽

Vol 143 (2) ◽

pp. 119 ◽

Cited By ~ 1

Author(s):

G.P. Bava ◽

P. Debernardi ◽

G. Osella

Keyword(s):

Quantum Well ◽

Semiconductor Laser ◽

Frequency Conversion ◽

Travelling Wave ◽

Quantum Well Structures ◽

Laser Amplifiers ◽

Semiconductor Laser Amplifiers

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Saturation characteristics of Ga/sub 0.68/In/sub 0.32/As/GaInAsP/InP tensile-strained quantum-well semiconductor laser amplifiers with tapered-waveguide structures

IEEE Journal of Quantum Electronics ◽

10.1109/3.309861 ◽

1994 ◽

Vol 30 (9) ◽

pp. 2034-2039 ◽

Cited By ~ 1

Author(s):

Y. Huang ◽

K. Komori ◽

K. Kudo ◽

S. Arai

Keyword(s):

Quantum Well ◽

Semiconductor Laser ◽

Laser Amplifiers ◽

Tapered Waveguide ◽

Strained Quantum Well ◽

Semiconductor Laser Amplifiers

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Amplified spontaneous emission effects in bulk and quantum well semiconductor laser amplifiers

10.1117/12.18120 ◽

1990 ◽

Cited By ~ 1

Author(s):

Weng W. Chow ◽

Richard R. Craig

Keyword(s):

Quantum Well ◽

Semiconductor Laser ◽

Spontaneous Emission ◽

Amplified Spontaneous Emission ◽

Laser Amplifiers ◽

Semiconductor Laser Amplifiers

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Noise study of low-dimensional quantum-well semiconductor laser amplifiers

IEEE Journal of Quantum Electronics ◽

10.1109/3.144481 ◽

1992 ◽

Vol 28 (9) ◽

pp. 1894-1900 ◽

Cited By ~ 6

Author(s):

K. Komori ◽

S. Arai ◽

Y. Suematsu

Keyword(s):

Quantum Well ◽

Semiconductor Laser ◽

Laser Amplifiers ◽

Low Dimensional ◽

Semiconductor Laser Amplifiers

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Polarization insensitive semiconductor laser amplifiers with tensile strained InGaAsP/InGaAsP multiple quantum well structure

Applied Physics Letters ◽

10.1063/1.109344 ◽

1993 ◽

Vol 62 (2) ◽

pp. 121-122 ◽

Cited By ~ 54

Author(s):

M. Joma ◽

H. Horikawa ◽

C. Q. Xu ◽

K. Yamada ◽

Y. Katoh ◽

...

Keyword(s):

Quantum Well ◽

Semiconductor Laser ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Laser Amplifiers ◽

Quantum Well Structure ◽

Polarization Insensitive ◽

Semiconductor Laser Amplifiers

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Effect of quantum well number on nonlinear refraction in semiconductor laser amplifiers biased at transparency

Proceedings of LEOS '93 ◽

10.1109/leos.1993.379291 ◽

2002 ◽

Cited By ~ 1

Author(s):

D.A.O. Davies ◽

M.A. Fisher ◽

D.J. Elton ◽

C.P. Seltzer ◽

M.J. Adams ◽

...

Keyword(s):

Quantum Well ◽

Semiconductor Laser ◽

Nonlinear Refraction ◽

Laser Amplifiers ◽

Semiconductor Laser Amplifiers

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Strained-layer InGaAs(P) quantum well semiconductor lasers and semiconductor laser amplifiers

Philips Journal of Research ◽

10.1016/0165-5817(95)98697-v ◽

1995 ◽

Vol 49 (3) ◽

pp. 187-224 ◽

Cited By ~ 5

Author(s):

P.J.A. Thijs ◽

L.F. Tiemeijer ◽

J.J.M. Binsma ◽

T. Van Dongen

Keyword(s):

Quantum Well ◽

Semiconductor Laser ◽

Semiconductor Lasers ◽

Strained Layer ◽

Laser Amplifiers ◽

Semiconductor Laser Amplifiers

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Molecular beam epitaxy of ZnCdSe/ZnSe strained quantum-well structures on GaAs(1 1 1)A substrates and piezoelectric properties

Journal of Crystal Growth ◽

10.1016/s0022-0248(97)00726-4 ◽

1998 ◽

Vol 184-185 (1-2) ◽

pp. 723-727

Author(s):

N Matsumura

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Piezoelectric Properties ◽

Quantum Well Structures ◽

Strained Quantum Well

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Frequency conversion by nearly-degenerate four-wave mixing in traveling-wave semiconductor laser amplifiers

IEE Proceedings J Optoelectronics ◽

10.1049/ip-j.1990.0036 ◽

1990 ◽

Vol 137 (4) ◽

pp. 209 ◽

Cited By ~ 14

Author(s):

N. Schunk ◽

G. Groβkopt ◽

R. Ludwig ◽

R. Schnabel ◽

H.G. Weber

Keyword(s):

Semiconductor Laser ◽

Traveling Wave ◽

Frequency Conversion ◽

Four Wave Mixing ◽

Wave Mixing ◽

Laser Amplifiers ◽

Degenerate Four Wave Mixing ◽

Semiconductor Laser Amplifiers

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