A study and optoelectronic verification of AlGaAs/GaAs heterojunction bipolar transistor large-signal characteristics

1993 ◽  
Vol 29 (11) ◽  
pp. 2799-2804 ◽  
Author(s):  
M.Y. Frankel ◽  
D. Pavlidis ◽  
G.A. Mourou
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Large Signal ◽  
Signal Characteristics

Large Signal Model of Heterojunction Bipolar Transistor InP/InGaAs as an Optoelectronic Mixer

2015 ◽  
Vol 67 (3) ◽  
Author(s):  
N. A. Shaharuddin ◽  
S. M. Idrus ◽  
S. Isaak ◽  
N. A. Mohamed ◽  
N. A. A. Yusni
Keyword(s):  
Radio Over Fiber ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Large Signal ◽  
Signal Model ◽  
Conversion Frequency ◽  
Broadband Radio ◽  
Spectral Performance

A large-signal model of InP/InGaAs single Heterojunction Bipolar Transistor (HBT) has been developed considering spectral performance and mixing. This model is based on Gummel Poon BJT model. HBT InP/InGaAs has been modeled and analyzed in this paper as an optoelectronic mixer (OEM). The HBT proposed was simulated by considering the wavelength of 1310 nm for an up-conversion frequency of 30 GHz. Its characteristics was further investigated to develop the appropriate structure device for OEM application. This proposed HBT InP/InGaAs can be potentially implemented in the broadband Radio over Fiber (RoF) system to perform photodetection and frequency up-conversion.

A Numerical Large Signal Model for the Heterojunction Bipolar Transistor

1991 ◽  
pp. 43-46 ◽  
Author(s):  
Douglas A. Teeter ◽  
Jack R. East ◽  
Richard K. Mains ◽  
George I. Haddad
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Large Signal ◽  
Signal Model
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