A COMPARISON BETWEEN THE HETEROJUNCTION BIPOLAR TRANSISTOR POWER PERFORMANCE COMPUTED USING LARGE SIGNAL “Y” PARAMETERS AND A FULL TIME DOMAIN SIMULATION

Author(s):  
Douglas A. Teeter ◽  
Jack R. East ◽  
Richard K. Mains ◽  
George I. Haddad
2015 ◽  
Vol 67 (3) ◽  
Author(s):  
N. A. Shaharuddin ◽  
S. M. Idrus ◽  
S. Isaak ◽  
N. A. Mohamed ◽  
N. A. A. Yusni

A large-signal model of InP/InGaAs single Heterojunction Bipolar Transistor (HBT) has been developed considering spectral performance and mixing. This model is based on Gummel Poon BJT model. HBT InP/InGaAs has been modeled and analyzed in this paper as an optoelectronic mixer (OEM). The HBT proposed was simulated by considering the wavelength of 1310 nm for an up-conversion frequency of 30 GHz. Its characteristics was further investigated to develop the appropriate structure device for OEM application. This proposed HBT InP/InGaAs can be potentially implemented in the broadband Radio over Fiber (RoF) system to perform photodetection and frequency up-conversion.


1988 ◽  
Vol 36 (4) ◽  
pp. 756-759 ◽  
Author(s):  
G.-W. Wang ◽  
I. Ichitsubo ◽  
W.H. Ku ◽  
Y.-K. Chen ◽  
L.F. Eastman

1991 ◽  
pp. 43-46 ◽  
Author(s):  
Douglas A. Teeter ◽  
Jack R. East ◽  
Richard K. Mains ◽  
George I. Haddad

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