Identification of band-edge optical transition types in tensile strained quantum wells

1993 ◽  
Vol 29 (5) ◽  
pp. 1355-1363 ◽  
Author(s):  
A. Baliga ◽  
N.G. Anderson
Keyword(s):  
Quantum Wells ◽  
Optical Transition ◽  
Band Edge ◽  
Strained Quantum Wells

InGaAs/GaAs strained quantum wells with a 1.3 μm band edge at room temperature

1989 ◽  
Vol 55 (14) ◽  
pp. 1436-1438 ◽  
Author(s):  
P. Melman ◽  
B. Elman ◽  
C. Jagannath ◽  
Emil S. Koteles ◽  
A. Silletti ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Band Edge ◽  
Strained Quantum Wells

Piezoelectric field and its influence on the pressure behavior of the light emission from GaN/AlGaN strained quantum wells

2001 ◽  
Vol 79 (10) ◽  
pp. 1483-1485 ◽  
Author(s):  
S. P. Łepkowski ◽  
H. Teisseyre ◽  
T. Suski ◽  
P. Perlin ◽  
N. Grandjean ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Strained Quantum Wells ◽  
Pressure Behavior ◽  
Piezoelectric Field

Ultrafast Carrier Dynamics, Optical Amplification, and Lasing in Nanocrystal Quantum Dots

MRS Bulletin ◽  
2001 ◽  
Vol 26 (12) ◽  
pp. 998-1004 ◽  
Author(s):  
Victor I. Klimov ◽  
Moungi G. Bawendi
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Electronic States ◽  
Three Dimensions ◽  
Band Edge ◽  
Lasing Threshold ◽  
Wide Energy Range ◽  
Band Edge Emission ◽  
Edge States

Semiconductor materials are widely used in both optically and electrically pumped lasers. The use of semiconductor quantum wells (QWs) as optical-gain media has resulted in important advances in laser technology. QWs have a two-dimensional, step-like density of electronic states that is nonzero at the band edge, enabling a higher concentration of carriers to contribute to the band-edge emission and leading to a reduced lasing threshold, improved temperature stability, and a narrower emission line. A further enhancement in the density of the band-edge states and an associated reduction in the lasing threshold are in principle possible using quantum wires and quantum dots (QDs), in which the confinement is in two and three dimensions, respectively. In very small dots, the spacing of the electronic states is much greater than the available thermal energy (strong confinement), inhibiting thermal depopulation of the lowest electronic states. This effect should result in a lasing threshold that is temperatureinsensitive at an excitation level of only 1 electron-hole (e-h) pair per dot on average. Additionally, QDs in the strongconfinement regime have an emission wavelength that is a pronounced function of size, adding the advantage of continuous spectral tunability over a wide energy range simply by changing the size of the dots.

InGaAs/InP heterostructures with strained quantum wells and quantum dots (λ=1.5–1.9 µm)

1999 ◽  
Vol 33 (9) ◽  
pp. 1007-1009
Author(s):  
Z. N. Sokolova ◽  
D. A. Vinokurov ◽  
I. S. Tarasov ◽  
N. A. Gun’ko ◽  
G. G. Zegrya
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Strained Quantum Wells

Investigation of MOVPE growth of silicon δ-doped GaAs epilayers and InxGa1−xAs/GaAs strained quantum wells

Vacuum ◽  
2004 ◽  
Vol 74 (2) ◽  
pp. 263-267 ◽  
Author(s):  
B. Ściana ◽  
D. Radziewicz ◽  
B. Paszkiewicz ◽  
M. Tłaczała ◽  
P. Sitarek ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Strained Quantum Wells ◽  
Movpe Growth
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