scholarly journals Generation of tunable short pulse VUV radiation by four-wave mixing in xenon with femtosecond KrF-excimer laser pulses

1993 ◽  
Vol 29 (4) ◽  
pp. 1233-1238 ◽  
Author(s):  
A. Tunnermann ◽  
C. Momma ◽  
K. Mossavi ◽  
C. Windolph ◽  
B. Welleghausen
Keyword(s):  
Excimer Laser ◽  
Short Pulse ◽  
Laser Pulses ◽  
Four Wave Mixing ◽  
Wave Mixing ◽  
Krf Excimer Laser

Surface hardening of SUS304 by irradiation with a KrF excimer laser in SiH4 gas ambient

1990 ◽  
Vol 5 (2) ◽  
pp. 265-270 ◽  
Author(s):  
Koji Sugioka ◽  
Hideo Tashiro ◽  
Koichi Toyoda ◽  
Eiichi Tamura ◽  
Keigo Nagasaka
Keyword(s):  
Excimer Laser ◽  
Surface Hardening ◽  
Continuous Distribution ◽  
Surface Hardness ◽  
Laser Pulses ◽  
High Concentration ◽  
Laser Fluences ◽  
High Adhesion ◽  
Krf Excimer Laser ◽  
Si Films

Surface hardening of SUS304 resulting from the process of doping and deposition of Si by irradiation of a KrF excimer laser beam in a SiH4 gas ambient is investigated, and variations of the surface hardness are examined for different numbers of laser pulses and the laser fluences. The hardening is due to Si incorporation in high concentration. The continuous distribution of Si atoms across the surface layer suggests that a very high adhesion strength of the deposited Si films can be formed. The specific process for surface modification is referred to as laser implant-deposition (LID).

Etch Performance of KRF Excimer Laser Micromachining Characterization on Silicon Material

2015 ◽  
Vol 780 ◽  
pp. 29-32 ◽  
Author(s):  
M.Z. Zainol ◽  
Yufridin Wahab ◽  
H. Fazmir ◽  
A.F.M. Anuar ◽  
S. Johari ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Etch Rate ◽  
Three Dimensional ◽  
Laser Pulses ◽  
Laser Micromachining ◽  
Rate Change ◽  
Performance Parameters ◽  
Laser Parameters ◽  
Characterization Study ◽  
Krf Excimer Laser

Excimer laser micromachining enables us to overcome the conventional lithography-based microfabrication limitations and simplify the process of creating three dimensional (3D) microstructures.The objective of this study is to investigate the relation between the number of laser pulses, number of laser passes through the channel of ablation site and their etch performance. Parameters such as frequency, fluence and velocity were retained as constants. In this paper, we present a parametric characterization study on silicon using KrF excimer laser micromachining. From the result, the etch rate change were recorded as the two major laser parameters (Number of laser pulses and number of laser passes) were varied. Both parameters were showing declination profile however from comparing both graphs, it showed that etch rate dropped more steeply when varied number of laser passes rather than number of pulses.

Efficient keV x‐ray emission from plasmas generated with 4 ps KrF excimer laser pulses

1993 ◽  
Vol 63 (22) ◽  
pp. 3046-3048 ◽  
Author(s):  
I. C. E. Turcu ◽  
I. N. Ross ◽  
G. J. Tallents
Keyword(s):  
Excimer Laser ◽  
Laser Pulses ◽  
X Ray ◽  
Krf Excimer Laser

Poly-Resistor Thin Film Formation by Excimer Laser Micromachine

2015 ◽  
Vol 780 ◽  
pp. 17-21
Author(s):  
A.F.M. Anuar ◽  
Yufridin Wahab ◽  
M.Z. Zainol ◽  
H. Fazmir ◽  
M. Najmi ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Laser Energy ◽  
Film Formation ◽  
Chemical Vapor ◽  
Laser Pulses ◽  
Beam Size ◽  
Silicon Thin Film ◽  
Pressure Chemical ◽  
Krf Excimer Laser

A simple theoretical model and resistor fabrication for calculating the resistance of a polycrystalline silicon thin film is presented. The resistance value for poly-resistor is perfomed in terms of polysilicon thickness and its total area. The KrF excimer laser micromachine is used in assisting the resistor formation for a low pressure chemical vapor deposition (LPCVD) based polysilicon. Laser micromachine with three main parameters is used to aid the fabrication of the poly-resistor; namely as the pulse rate (i.e. number of laser pulses per second), laser beam size and laser energy. These parameters have been investigated to create the isolation between materials and also to achieve the desired poly-resistor shape. Preliminary results show that the 35 um beam size and 15 mJ of energy level is the most effective parameter to produce the pattern. Poly-resistor formation with 12 and 21 number of squares shows the total average resistance of 303.52 Ω and 210.14 Ω respectively. The laser micromachine process also significantly reduce the total time and number of process steps that are required for resistor fabrication.

Controllable cascaded four-wave mixing by two chirped femtosecond laser pulses

2012 ◽  
Vol 108 (3) ◽  
pp. 487-491 ◽  
Author(s):  
H. Zhang ◽  
Z. Zhou ◽  
A. Lin ◽  
J. Cheng ◽  
H. Liu ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Laser Pulses ◽  
Four Wave Mixing ◽  
Femtosecond Laser Pulses ◽  
Wave Mixing

High-order harmonic generation by subpicosecond KrF excimer laser pulses

1996 ◽  
Vol 21 (1) ◽  
pp. 15 ◽  
Author(s):  
Yutaka Nagata ◽  
Katsumi Midorikawa ◽  
Minoru Obara ◽  
Koichi Toyoda
Keyword(s):  
Excimer Laser ◽  
Harmonic Generation ◽  
Laser Pulses ◽  
High Order ◽  
High Order Harmonic Generation ◽  
High Order Harmonic ◽  
Krf Excimer Laser

scholarly journals The Tunable, Narrow-Bandwidth Excimer Laser, the New Workhorse for Photochemistry in the UV and VUV

1983 ◽  
Vol 3 (1-6) ◽  
pp. 307-310
Author(s):  
K. Hohla ◽  
W. Mückenheim ◽  
D. Basting
Keyword(s):  
Excimer Laser ◽  
Broad Band ◽  
High Gain ◽  
Four Wave Mixing ◽  
Excimer Lasers ◽  
Spectral Brightness ◽  
Wave Mixing ◽  
Laser Transition ◽  
Linear Processes ◽  
Narrow Bandwidth

Excimer lasers are powerful sources of radiation in the UV, providing several laser lines between 157 and 353 nm. The excimer laser transition is bound-free, and thus the emitted wavelengths are broad-band (up to 200 cm−1). In addition the high gain (0.15 cm−1) of the laser gas causes a rather large divergence (>1 mrad) in conventional excimer lasers.A new excimer laser concept is described which improves the spectral brightness in terms of watt/(rad × bandwidth) by three orders of magnitude. This allows, through non-linear processes such as Raman shifting the fundamental output and four-wave-mixing in gases, the generation of new laser lines in the UV and VUV.

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