Optically pumped four-level infrared laser based on intersubband transitions in multiple quantum wells: feasibility study

1993 ◽  
Vol 29 (4) ◽  
pp. 1104-1111 ◽  
Author(s):  
G. Sun ◽  
J.B. Khurgin
Keyword(s):  
Quantum Wells ◽  
Feasibility Study ◽  
Infrared Laser ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Intersubband Transitions ◽  
Optically Pumped

Ultraviolet Stimulated Emission From Optically Pumped AlGaN/AlGaN Multiple Quantum Wells on Pulsed Laterally Overgrown $a$-Plane GaN

2011 ◽  
Vol 4 (8) ◽  
pp. 082103 ◽  
Author(s):  
Mohamed Lachab ◽  
Krishnan Balakrishnan ◽  
Bin Zhang ◽  
Joe Dion ◽  
Qhalid Fareed ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Stimulated Emission ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Optically Pumped

Study of Near-Threshold Gain Mechanisms in MOCVD-Grown GaN Epilayers and InGaN/GaN Heterostructures

1999 ◽  
Vol 572 ◽  
Author(s):  
S. Bidnyk ◽  
T. J. Schmidt ◽  
B. D. Little ◽  
J. J. Song
Keyword(s):  
Quantum Wells ◽  
Stimulated Emission ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Optically Pumped ◽  
Electron Hole ◽  
Electron Hole Plasma ◽  
Narrow Emission ◽  
Threshold Gain ◽  
Near Threshold

ABSTRACTWe report the results of an experimental study on near-threshold gain mechanisms in optically pumped GaN epilayers and InGaN/GaN heterostructures at temperatures as high as 700 K. We show that the dominant near-threshold gain mechanism in GaN epilayers is inelastic excitonexciton scattering for temperatures below ∼ 150 K, characterized by band-filling phenomena and a relatively low stimulated emission (SE) threshold. An analysis of both the temperature dependence of the SE threshold and the relative shift between stimulated and band-edge related emission indicates electron-hole plasma is the dominant gain mechanism for temperatures exceeding 150 K. The dominant mechanism for SE in InGaN epilayers and InGaN/GaN multiple quantum wells was found to be the recombination of carriers localized at potential fluctuations resulting from nonuniform indium incorporation. The SE spectra from InGaN epilayers and multiple quantum wells were comprised of extremely narrow emission lines and no spectral broadening of the lines was observed as the temperature was raised from 10 K to over 550 K. Based on the presented results, we suggest a method for significantly reducing the carrier densities needed to achieve population inversion in GaN, allowing for the development of GaNactive-medium laser diodes.

Intrasubband and intersubband transitions in GaAs∕AlxGa1−xAs multiple quantum wells

2007 ◽  
Vol 90 (16) ◽  
pp. 162111
Author(s):  
J. M. Li ◽  
K. Y. Qian ◽  
Q. S. Zhu ◽  
Z. G. Wang
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Intersubband Transitions

Far-infrared laser photoconductivity of n-GaAs multiple quantum wells in a pulsed magnetic field

1998 ◽  
Vol 246-247 ◽  
pp. 290-293 ◽  
Author(s):  
R.J. Heron ◽  
R.A. Lewis ◽  
A.V. Skougarevsky ◽  
R.P. Starrett ◽  
R.G. Clark ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Quantum Wells ◽  
Far Infrared ◽  
Infrared Laser ◽  
Pulsed Magnetic Field ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Far Infrared Laser
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