Threshold current density in strained layer In/sub x/Ga/sub 1-x/As-GaAs quantum-well heterostructure lasers

J.J. Coleman; K.J. Beernink; M.E. Givens

doi:10.1109/3.159507

Threshold current density in strained layer In/sub x/Ga/sub 1-x/As-GaAs quantum-well heterostructure lasers

IEEE Journal of Quantum Electronics ◽

10.1109/3.159507 ◽

1992 ◽

Vol 28 (10) ◽

pp. 1983-1989 ◽

Cited By ~ 20

Author(s):

J.J. Coleman ◽

K.J. Beernink ◽

M.E. Givens

Keyword(s):

Quantum Well ◽

Current Density ◽

Threshold Current ◽

Threshold Current Density ◽

Strained Layer

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200-A/cm/sup 2/ threshold current density 1.5- mu m GaInAs/AlGaInAs strained-layer GRIN-SCH quantum-well laser diodes grown by OMCVD

IEEE Transactions on Electron Devices ◽

10.1109/16.158769 ◽

1991 ◽

Vol 38 (12) ◽

pp. 2690

Author(s):

A. Kasukawa ◽

R. Bhat ◽

C.E. Zah ◽

M.A. Koza ◽

S.A. Schwarz ◽

...

Keyword(s):

Quantum Well ◽

Current Density ◽

Laser Diodes ◽

Threshold Current ◽

Threshold Current Density ◽

Strained Layer ◽

Quantum Well Laser

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The effects of strain on the threshold current density in InGaAsP/InP strained‐layer single‐quantum‐well lasers

Journal of Applied Physics ◽

10.1063/1.357468 ◽

1994 ◽

Vol 76 (6) ◽

pp. 3250-3254 ◽

Cited By ~ 18

Author(s):

Shunji Seki ◽

Kiyoyuki Yokoyama

Keyword(s):

Quantum Well ◽

Current Density ◽

Threshold Current ◽

Threshold Current Density ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Strained Layer

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Effects of Temperature and Well Composition on Threshold Current Density for Compressive Strained-Layer AlxGayIn1-x-yAs Single Quantum Well Lasers

IEEJ Transactions on Electronics Information and Systems ◽

10.1541/ieejeiss.133.1139 ◽

2013 ◽

Vol 133 (6) ◽

pp. 1139-1144

Author(s):

Durga Prasad Sapkota ◽

Madhu Sudan Kayastha ◽

Koichi Wakita

Keyword(s):

Quantum Well ◽

Current Density ◽

Threshold Current ◽

Threshold Current Density ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Strained Layer ◽

Effects Of Temperature

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200 A/cm/sup 2/ Threshold Current Density 1.5μm Gainas/aigainas Strained-layer Grin-sch Quantum Well Laser Diodes Grown By Omcvd

[1991] 49th Annual Device Research Conference Digest ◽

10.1109/drc.1991.664666 ◽

2005 ◽

Cited By ~ 1

Author(s):

A. Kasukawa ◽

R. Bhat ◽

C.E. Zah ◽

M.A. Koza ◽

S.A. Schwarz ◽

...

Keyword(s):

Quantum Well ◽

Current Density ◽

Laser Diodes ◽

Threshold Current ◽

Threshold Current Density ◽

Strained Layer ◽

Quantum Well Laser

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Low threshold current density 1.3-/spl mu/m strained-layer quantum-well lasers using n-type modulation doping

IEEE Photonics Technology Letters ◽

10.1109/68.329626 ◽

1994 ◽

Vol 6 (10) ◽

pp. 1165-1166 ◽

Cited By ~ 17

Author(s):

T. Yamamoto ◽

T. Watanabe ◽

S. Ide ◽

I. Tanaka ◽

H. Nobuhara ◽

...

Keyword(s):

Quantum Well ◽

Current Density ◽

Threshold Current ◽

Threshold Current Density ◽

Quantum Well Lasers ◽

Modulation Doping ◽

Strained Layer ◽

Low Threshold

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Dependence of threshold current density on quantum well composition for strained‐layer InGaAs‐GaAs lasers by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.101986 ◽

1989 ◽

Vol 55 (25) ◽

pp. 2585-2587 ◽

Cited By ~ 47

Author(s):

K. J. Beernink ◽

P. K. York ◽

J. J. Coleman

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Current Density ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Threshold Current ◽

Threshold Current Density ◽

Strained Layer ◽

Metalorganic Chemical

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Dependence of threshold current density on quantum well composition for compressive strained-layer AlxGayIn1−x−yAs lasers

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) ◽

10.1109/iciprm.2010.5516084 ◽

2010 ◽

Author(s):

Durga Prasad Sapkota ◽

Madhu Sudan Kayastha ◽

Koichi Wakita

Keyword(s):

Quantum Well ◽

Current Density ◽

Threshold Current ◽

Threshold Current Density ◽

Strained Layer

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Visible AlGaAs single quantum well lasers with low threshold current density grown by molecular beam epitaxy

Electronics Letters ◽

10.1049/el:19880364 ◽

1988 ◽

Vol 24 (9) ◽

pp. 537

Author(s):

B. Saint-Cricq ◽

F. Chatenoud ◽

F. Lozes-Dupuy ◽

S. Fourtine ◽

H. Martinot

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Current Density ◽

Molecular Beam ◽

Threshold Current ◽

Threshold Current Density ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Low Threshold

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1.34 [micro sign]m GaInNAs quantum well lasers with low room-temperature threshold current density

Electronics Letters ◽

10.1049/el:20061325 ◽

2006 ◽

Vol 42 (16) ◽

pp. 923 ◽

Cited By ~ 13

Author(s):

M. Hopkinson ◽

C.Y. Jin ◽

H.Y. Liu ◽

P. Navaretti ◽

R. Airey

Keyword(s):

Quantum Well ◽

Current Density ◽

Room Temperature ◽

Threshold Current ◽

Threshold Current Density ◽

Quantum Well Lasers ◽

Temperature Threshold

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Effect of design variations on the threshold current density of AlxGa1−xAs separate confinement heterostructure single quantum well lasers

Journal of Applied Physics ◽

10.1063/1.350757 ◽

1992 ◽

Vol 71 (9) ◽

pp. 4583-4588 ◽

Cited By ~ 2

Author(s):

M. E. Givens ◽

L. M. Miller ◽

J. J. Coleman

Keyword(s):

Quantum Well ◽

Current Density ◽

Threshold Current ◽

Threshold Current Density ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well

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