InGaAs-InAlAs multiple quantum well optical bistable devices using the resonant tunneling effect

1992 ◽  
Vol 28 (1) ◽  
pp. 308-314 ◽  
Author(s):  
Y. Kawamura ◽  
H. Asai ◽  
S. Matsuo ◽  
C. Amano
Keyword(s):  
Quantum Well ◽  
Resonant Tunneling ◽  
Multiple Quantum Well ◽  
Tunneling Effect ◽  
Multiple Quantum ◽  
Resonant Tunneling Effect

RESONANT TUNNELING STUDIES OF VARIABLY SPACED MULTIPLE QUANTUM WELL STRUCTURES IN THE AlGaAs SYSTEM

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-457-C5-461
Author(s):  
C. J. SUMMERS ◽  
K. F. BRENNAN ◽  
A. TORABI ◽  
H. M. HARRIS ◽  
J. COMAS
Keyword(s):  
Quantum Well ◽  
Resonant Tunneling ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures

Resonant Tunneling Transport in a GaN/AlN Multiple-Quantum-Well Structure

2012 ◽  
Vol 5 (5) ◽  
pp. 052203 ◽  
Author(s):  
Salam Sakr ◽  
Yulia Kotsar ◽  
Maria Tchernycheva ◽  
Elias Warde ◽  
Nathalie Isac ◽  
...  
Keyword(s):  
Quantum Well ◽  
Resonant Tunneling ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structure ◽  
Tunneling Transport

Highly Strained (InAs)M/(GaAs)N Multiple Quantum Well Based Resonant Tunneling Diodes on GaAs (100) Substrates and Their Application in Optical Switching

1991 ◽  
Vol 228 ◽  
Author(s):  
R. M. Kapre ◽  
Kezhong Hu ◽  
Li Chen ◽  
S. Guha ◽  
A. Madhukar
Keyword(s):  
Quantum Well ◽  
Resonant Tunneling ◽  
Optical Switching ◽  
Room Temperature ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Bistable Switch ◽  
Tunneling Diode ◽  
Short Period ◽  
Highly Strained

ABSTRACTWe report the realization of (a) an optically bistable switch using a strained resonant tunneling diode (RTD) and (b) highly strained RTDs exhibiting simultaneously high peak current densities (Jp) and peak-to-valley current ratios (PVR) suitable for high-speed electronic switching. Both of these make use of RTDs with (InAs)M/(GaAs)N strained short period multiple quantum well regions with AlAs barriers in a triple-well, double barrier structure. For the former, high contrast ratio (20:1) and an on state reflectivity of 46.5 % has been obtained at room temperature in an optically bistable switch involving a strained InGaAs/GaAs (100) multiple quantum well based asymmetric Fabty-Perot reflection modulator, detector, and a strained RTD and a Si field effect transistor. For the latter, we have obtained a Jp of 125 kA/cm2 with a PVR of 4.7 at room temperature.

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