Shot-noise reduction in multiple-quantum-well resonant tunneling diodes

2003 ◽  
Vol 50 (4) ◽  
pp. 1063-1068 ◽  
Author(s):  
V. Pouyet ◽  
E.R. Brown
Keyword(s):  
Quantum Well ◽  
Noise Reduction ◽  
Shot Noise ◽  
Resonant Tunneling ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes

RESONANT TUNNELING STUDIES OF VARIABLY SPACED MULTIPLE QUANTUM WELL STRUCTURES IN THE AlGaAs SYSTEM

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-457-C5-461
Author(s):  
C. J. SUMMERS ◽  
K. F. BRENNAN ◽  
A. TORABI ◽  
H. M. HARRIS ◽  
J. COMAS
Keyword(s):  
Quantum Well ◽  
Resonant Tunneling ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures

Asymmetric quantum-well structures for AlGaN/GaN/AlGaN resonant tunneling diodes

2016 ◽  
Vol 119 (16) ◽  
pp. 164501 ◽  
Author(s):  
Lin'an Yang ◽  
Yue Li ◽  
Ying Wang ◽  
Shengrui Xu ◽  
Yue Hao
Keyword(s):  
Quantum Well ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Quantum Well Structures ◽  
Tunneling Diodes ◽  
Asymmetric Quantum

Factors reducing the cut-off frequency of resonant tunneling diodes

2012 ◽  
Vol 4 (6) ◽  
pp. 605-611
Author(s):  
Nikolay Alkeev ◽  
Stanislav Averin ◽  
Aleksey Dorofeev ◽  
Nadezda Gladysheva
Keyword(s):  
Quantum Well ◽  
Equivalent Circuit ◽  
Delay Time ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Electron States ◽  
Tunneling Diodes ◽  
Active Layers ◽  
In Series ◽  
Additional Resistance

The impedance dependence of resonant tunneling diodes (RTDs) based on the GaAs/AlAs heterosystem is investigated in the range of 0.1–40 GHz. The analysis shows that the impedance of about 90% of unbiased RTDs is well described by an equivalent circuit (EC) consisting of parallel-connected resistance and capacitance and an additional resistance connected in series with this parallel combination. When a bias voltage is applied to these RTDs, one needs a “quantum” inductance LQ to describe the impedance behavior. We find the value of LQ and calculate the delay time of electrons in the quantum well (QW) of an RTD. The impedance of the rest 10% of the RTDs is well described by an EC that takes into account the recharge of localized electron states at the heterointerfaces of the active layers. Expressions for the cut-off frequencies that take into account the delay of electrons in the QW and the localized electron states at the heterointerfaces are derived. It is shown that the delay of electrons in the QW and localized electron states at the heterointerfaces may significantly reduce the cut-off frequency of RTDs.

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