Temperature‐dependent factors contributing toT0in graded‐index separate‐confinement‐heterostructure single quantum well lasers

M. M. Leopold; A. P. Specht; C. A. Zmudzinski; M. E. Givens; J. J. Coleman

doi:10.1063/1.97834

Temperature‐dependent factors contributing toT0in graded‐index separate‐confinement‐heterostructure single quantum well lasers

Applied Physics Letters ◽

10.1063/1.97834 ◽

1987 ◽

Vol 50 (20) ◽

pp. 1403-1405 ◽

Cited By ~ 16

Author(s):

M. M. Leopold ◽

A. P. Specht ◽

C. A. Zmudzinski ◽

M. E. Givens ◽

J. J. Coleman

Keyword(s):

Quantum Well ◽

Quantum Well Lasers ◽

Single Quantum ◽

Temperature Dependent ◽

Single Quantum Well ◽

Graded Index

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IVB-2 facet-coated graded-index separate-confinement-heterostructure single-quantum-well lasers having low degradation rates (<1%/kh) at 70°C

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1983.21382 ◽

1983 ◽

Vol 30 (11) ◽

pp. 1592-1593

Author(s):

R.D. Dupuis ◽

R.L. Hartman ◽

F.R. Nash

Keyword(s):

Quantum Well ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Graded Index ◽

Degradation Rates

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Optical and microwave performance of GaAs-AlGaAs and strained layer InGaAs-GaAs-AlGaAs graded index separate confinement heterostructure single quantum well lasers

IEEE Photonics Technology Letters ◽

10.1109/68.47025 ◽

1990 ◽

Vol 2 (1) ◽

pp. 9-11 ◽

Cited By ~ 53

Author(s):

S.D. Offsey ◽

W.J. Shcaff ◽

P.J. Tasker ◽

L.F. Eastman

Keyword(s):

Quantum Well ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Strained Layer ◽

Graded Index

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Facet-coated graded-index separate-confinement-heterostructure single-quantum-well lasers having low degradation rates (<1 percent/kh) at 70°C

IEEE Electron Device Letters ◽

10.1109/edl.1983.25735 ◽

1983 ◽

Vol 4 (8) ◽

pp. 286-288 ◽

Cited By ~ 16

Author(s):

R.D. Dupuis ◽

R.L. Hartman ◽

F.R. Nash

Keyword(s):

Quantum Well ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Graded Index ◽

Degradation Rates

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Temperature dependence of optical gain, quantum efficiency, and threshold current in GaAs/GaAlAs graded-index separate-confinement heterostructure single-quantum-well lasers

IEEE Journal of Quantum Electronics ◽

10.1109/3.35226 ◽

1989 ◽

Vol 25 (9) ◽

pp. 2007-2012 ◽

Cited By ~ 10

Author(s):

L.D. Zhu ◽

B.Z. Zheng ◽

G.A.B. Feak

Keyword(s):

Quantum Well ◽

Temperature Dependence ◽

Quantum Efficiency ◽

Optical Gain ◽

Threshold Current ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Graded Index

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Very low threshold graded-index separate-confinement-heterostructure strained InGaAsP single-quantum-well lasers

Electronics Letters ◽

10.1049/el:19940137 ◽

1994 ◽

Vol 30 (3) ◽

pp. 243-244 ◽

Cited By ~ 6

Author(s):

N. Yamamoto ◽

K. Yokoyama ◽

M. Yamamoto ◽

T. Yamanaka

Keyword(s):

Quantum Well ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Graded Index ◽

Low Threshold

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Optical and microwave performance of GaAs-AlGaAs and strained-layer InGaAs-GaAs-AlGaAs graded-index separate-confinement heterostructure single quantum well lasers

10.1109/cornel.1989.79851 ◽

2003 ◽

Author(s):

S.D. Offsey ◽

W.J. Schaff ◽

P.J. Tasker ◽

W.D. Braddock ◽

L.F. Eastman

Keyword(s):

Quantum Well ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Strained Layer ◽

Graded Index

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Effect of cladding layer thickness on the performance of GaAs-AlGaAs graded index separate confinement heterostructure single quantum-well lasers

IEEE Journal of Quantum Electronics ◽

10.1109/3.102624 ◽

1990 ◽

Vol 26 (9) ◽

pp. 1476-1480 ◽

Cited By ~ 7

Author(s):

A. Behfar-Rad ◽

J.R. Shealy ◽

S.R. Chinn ◽

S.S. Wong

Keyword(s):

Quantum Well ◽

Layer Thickness ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Graded Index ◽

Cladding Layer

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Strained-layer InGaAs-GaAs-AlGaAs graded-index separate-confinement single quantum well lasers grown by molecular-beam epitaxy

IEEE Transactions on Electron Devices ◽

10.1109/16.43714 ◽

1989 ◽

Vol 36 (11) ◽

pp. 2608

Author(s):

S.D. Offsey ◽

W.J. Schaff ◽

P.J. Tasker ◽

L.F. Eastman

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Strained Layer ◽

Graded Index

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High‐power low‐threshold graded‐index separate confinement heterostructure AlGaAs single quantum well lasers on Si substrates

Applied Physics Letters ◽

10.1063/1.101587 ◽

1989 ◽

Vol 55 (15) ◽

pp. 1492-1494 ◽

Cited By ~ 6

Author(s):

Jae‐Hoon Kim ◽

Robert J. Lang ◽

Gouri Radhakrishnan ◽

Joseph Katz ◽

Authi A. Narayanan ◽

...

Keyword(s):

Quantum Well ◽

High Power ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Graded Index ◽

Si Substrates ◽

Low Threshold

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Strained‐layer InGaAs‐GaAs‐AlGaAs graded‐index separate confinement heterostructure single quantum well lasers grown by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.101083 ◽

1989 ◽

Vol 54 (25) ◽

pp. 2527-2529 ◽

Cited By ~ 30

Author(s):

S. D. Offsey ◽

W. J. Schaff ◽

P. J. Tasker ◽

H. Ennen ◽

L. F. Eastman

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Strained Layer ◽

Graded Index

Download Full-text

Temperature‐dependent factors contributing toT0in graded‐index separate‐confinement‐heterostructure single quantum well lasers

IVB-2 facet-coated graded-index separate-confinement-heterostructure single-quantum-well lasers having low degradation rates (&lt;1%/kh) at 70°C

Optical and microwave performance of GaAs-AlGaAs and strained layer InGaAs-GaAs-AlGaAs graded index separate confinement heterostructure single quantum well lasers

Facet-coated graded-index separate-confinement-heterostructure single-quantum-well lasers having low degradation rates (&lt;1 percent/kh) at 70°C

Temperature dependence of optical gain, quantum efficiency, and threshold current in GaAs/GaAlAs graded-index separate-confinement heterostructure single-quantum-well lasers

Very low threshold graded-index separate-confinement-heterostructure strained InGaAsP single-quantum-well lasers

Optical and microwave performance of GaAs-AlGaAs and strained-layer InGaAs-GaAs-AlGaAs graded-index separate-confinement heterostructure single quantum well lasers

Effect of cladding layer thickness on the performance of GaAs-AlGaAs graded index separate confinement heterostructure single quantum-well lasers

Strained-layer InGaAs-GaAs-AlGaAs graded-index separate-confinement single quantum well lasers grown by molecular-beam epitaxy

High‐power low‐threshold graded‐index separate confinement heterostructure AlGaAs single quantum well lasers on Si substrates

Strained‐layer InGaAs‐GaAs‐AlGaAs graded‐index separate confinement heterostructure single quantum well lasers grown by molecular beam epitaxy

IVB-2 facet-coated graded-index separate-confinement-heterostructure single-quantum-well lasers having low degradation rates (<1%/kh) at 70°C

Facet-coated graded-index separate-confinement-heterostructure single-quantum-well lasers having low degradation rates (<1 percent/kh) at 70°C